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    Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness
    12.
    发明授权
    Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness 有权

    公开(公告)号：US11682228B2

    公开(公告)日：2023-06-20

    申请号：US17454796

    申请日：2021-11-12

    Applicant: InvenSense, Inc.

    Inventor： Quy Chau ,  Mei-Lin Chan

    IPC: G06V40/13 ,  G06V40/12 ,  G06V10/143

    CPC classification number: G06V40/1306 ,  G06V10/143 ,  G06V40/1329 ,  G06V40/1365

    Abstract: An ultrasonic sensor includes a two-dimensional array of ultrasonic transducers, wherein the two-dimensional array of ultrasonic transducers is substantially flat, a contact layer having a non-uniform thickness overlying the two-dimensional array of ultrasonic transducers, and an array controller configured to control activation of ultrasonic transducers during an imaging operation. During the imaging operation, the array controller is configured to control a transmission frequency of activated ultrasonic transducers during the imaging operation, wherein a plurality of transmission frequencies are used during the imaging operation to account for an impact of an interference pattern caused by the non-uniform thickness of the contact layer, and is configured to capture at least one fingerprint image using the plurality of transmission frequencies.

    Reflection minimization for sensor
    14.
    发明授权
    Reflection minimization for sensor 有权

    公开(公告)号：US11517938B2

    公开(公告)日：2022-12-06

    申请号：US16107894

    申请日：2018-08-21

    Applicant: InvenSense, Inc.

    Inventor： Mei-Lin Chan ,  Nikhil Apte ,  Renata Melamud Berger

    IPC: B06B1/06 ,  G10K11/00 ,  G10K11/28 ,  G01H11/08 ,  H01L41/09 ,  B06B1/02 ,  H01L41/047

    Abstract: An electronic device includes a substrate layer having a front surface and a back surface opposite the front surface, a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate backward waves during operation, the backward waves propagating through the substrate layer, and a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to modify the backward waves during the operation.

    Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness
    16.
    发明授权
    Ultrasonic fingerprint sensor with a contact layer of non-uniform thickness 有权

    公开(公告)号：US11460957B2

    公开(公告)日：2022-10-04

    申请号：US17195465

    申请日：2021-03-08

    Applicant: InvenSense, Inc.

    Inventor： Mark Jennings ,  Mei-Lin Chan

    IPC: G06F3/043 ,  G06F3/041 ,  H01L41/047 ,  H01L41/083 ,  G06V40/13

    Abstract: An ultrasonic sensor includes a two-dimensional array of ultrasonic transducers, a contact layer, a matching layer between the two-dimensional array and the contact layer, where the matching layer has a non-uniform thickness, and an array controller configured to control activation of ultrasonic transducers during an imaging operation for imaging a plurality of pixels within the two-dimensional array of ultrasonic transducers. During the imaging operation, the array controller is configured to activate different subsets of ultrasonic transducers associated with different regions of the two-dimensional array of ultrasonic transducers at different transmission frequencies, where the different frequencies are determined such that a thickness of the matching layer at a region is substantially equal to a quarter wavelength of the first transmission frequency for the region. The array controller is also configured to combine the plurality of pixels into a compound fingerprint image that compensates for the non-uniform thickness of the matching layer.

    METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT
    18.
    发明申请
    METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT 有权
    具有双层结构层和声学端口的MEMS结构的方法

    公开(公告)号：US20160083247A1

    公开(公告)日：2016-03-24

    申请号：US14957562

    申请日：2015-12-02

    Applicant: Invensense, Inc.

    Inventor： Michael Julian Daneman ,  Mei-Lin Chan ,  Martin Lim ,  Fariboz Assaderaghi ,  Erhan Polatkan Ata

    IPC: B81C1/00

    CPC classification number: B81C1/00246 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/112 ,  B81C2203/0118 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L2224/83805

    Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.

    Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。

    METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT
    19.
    发明申请
    METHOD FOR MEMS STRUCTURE WITH DUAL-LEVEL STRUCTURAL LAYER AND ACOUSTIC PORT 有权
    具有双层结构层和声学端口的MEMS结构的方法

    公开(公告)号：US20140239353A1

    公开(公告)日：2014-08-28

    申请号：US14084569

    申请日：2013-11-19

    Applicant: Invensense, Inc.

    Inventor： Michael Julian Daneman ,  Mei-Lin Chan ,  Martin Lim ,  Fariboz Assaderaghi ,  Erhan Polatkan Ata

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00246 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2207/012 ,  B81C1/00158 ,  B81C2201/112 ,  B81C2203/0118 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L2224/83805

    Abstract: A method for fabricating a MEMS device includes depositing and patterning a first sacrificial layer onto a silicon substrate, the first sacrificial layer being partially removed leaving a first remaining oxide. Further, the method includes depositing a conductive structure layer onto the silicon substrate, the conductive structure layer making physical contact with at least a portion of the silicon substrate. Further, a second sacrificial layer is formed on top of the conductive structure layer. Patterning and etching of the silicon substrate is performed stopping at the second sacrificial layer. Additionally, the MEMS substrate is bonded to a CMOS wafer, the CMOS wafer having formed thereupon a metal layer. An electrical connection is formed between the MEMS substrate and the metal layer.

    Abstract translation: 一种用于制造MEMS器件的方法包括将第一牺牲层沉积并图案化到硅衬底上，第一牺牲层被部分去除留下第一剩余氧化物。 此外，该方法包括在硅衬底上沉积导电结构层，导电结构层与硅衬底的至少一部分进行物理接触。 此外，在导电结构层的顶部上形成第二牺牲层。 在第二牺牲层停止硅衬底的图案化和蚀刻。 此外，MEMS衬底被结合到CMOS晶片，其上形成有金属层的CMOS晶片。 在MEMS衬底和金属层之间形成电连接。

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