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公开(公告)号:US20070193682A1
公开(公告)日:2007-08-23
申请号:US10599638
申请日:2005-04-06
申请人: Tatsuo Sasaoka , Satoshi Horie , Isamu Aokura , Yoshihiko Yagi , Kazuki Fukada
发明人: Tatsuo Sasaoka , Satoshi Horie , Isamu Aokura , Yoshihiko Yagi , Kazuki Fukada
CPC分类号: B23K1/203 , B23K2101/40 , H01L21/4864 , H01L21/6835 , H01L23/3142 , H01L24/75 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/1134 , H01L2224/1181 , H01L2224/1184 , H01L2224/13019 , H01L2224/13144 , H01L2224/749 , H01L2224/75 , H01L2224/75301 , H01L2224/75753 , H01L2224/81009 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81191 , H01L2224/81395 , H01L2224/81801 , H01L2224/8182 , H01L2224/81894 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01021 , H01L2924/01025 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H05K3/328 , H05K3/3489 , H05K3/383 , H05K2201/0373 , H05K2201/10674 , H05K2203/0307 , Y10S438/974 , Y10T156/1023 , Y10T156/14 , H01L2224/05599
摘要: A bonding method and an apparatus that enable metal bonding under the atmospheric pressure and at room temperature, wherein the surfaces of objects (1b, 2a) to be bonded together are cleaned in an initial cleaning step (S1) to remove bonding inhibitor substances (G) such as oxides and adhered substances; one (1b) of the bonding surfaces is provided with an uneven profile with a predetermined roughness in a surface roughness control step (S3); a surface treatment step (S5) is performed to remove the substances (F) that have been removed but adhered to the bonding surfaces (1b, 2a) again; and the uneven bonding surface (1b) is pressed against the other bonding surface (2a) to bond them together.
摘要翻译: 在大气压和室温下能够进行金属接合的接合方法和装置,其中在初始清洁步骤(S1)中清洁要结合在一起的物体(1b,2a)的表面以除去结合抑制剂 物质(G),如氧化物和附着物质; 一个(1b)的粘合表面在表面粗糙度控制步骤(S 3)中设置有具有预定粗糙度的凹凸轮廓; 执行表面处理步骤(S 5)以除去已经去除但又粘附到接合表面(1b,2a)上的物质(F) 并且不平坦的接合表面(1b)被压靠在另一个接合表面(2a)上以将它们结合在一起。
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公开(公告)号:US06217714B1
公开(公告)日:2001-04-17
申请号:US08672660
申请日:1996-06-28
申请人: Munekazu Nishihara , Teiichi Kimura , Isamu Aokura
发明人: Munekazu Nishihara , Teiichi Kimura , Isamu Aokura
IPC分类号: C23C1434
CPC分类号: C23C14/352 , H01J37/3408
摘要: In a sputtering apparatus, in a vacuum chamber having a gas supply and a gas discharge functions, a substrate is set to a supporting part therefor and a target is disposed at an electrode connected with a power source within a plane opposite to the substrate, so as to form a film while holding the substrate in a fixed state to the target. The electrode is divided into three or more electrode parts, the target is divided and disposed on the three or more electrode parts within the plane, and a magnet is arranged for each divided target at a position where a line of magnetic force on a surface of the each target is generated by each magnet.
摘要翻译: 在溅射装置中,在具有气体供给和气体放电功能的真空室中,将基板设定为支撑部,并且在与基板相反的平面内的与电源连接的电极上设置靶,因此 以便在将固定状态的基板保持在目标上的同时形成膜。 电极被分为三个或更多个电极部分,目标被分割并设置在平面内的三个或更多个电极部分上,并且在每个分割的靶上布置磁体, 每个目标由每个磁体产生。
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公开(公告)号:US06176980B1
公开(公告)日:2001-01-23
申请号:US09471509
申请日:1999-12-23
IPC分类号: C23C1434
CPC分类号: C23C14/3492 , C23C14/34 , H01J37/32449 , H01J37/32834
摘要: The film thickness of a thin film formed on substrate 14 is made symmetrical and uniform by eliminating currents of gas over target 9 by performing film deposition in a condition with gas supply and vacuum evacuation cut off, after adjusting the interior of vacuum chamber 1 to the predetermined pressure.
摘要翻译: 通过在将气体供给和真空抽真空切断的状态下进行膜沉积,在将真空室1的内部调节到了真空室1之后,通过在目标9上除去气体的电流,使形成在基板14上的薄膜的膜厚度对称和均匀 预定压力。
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公开(公告)号:US07659148B2
公开(公告)日:2010-02-09
申请号:US10599638
申请日:2005-04-06
申请人: Tatsuo Sasaoka , Satoshi Horie , Isamu Aokura , Yoshihiko Yagi , Kazuki Fukada
发明人: Tatsuo Sasaoka , Satoshi Horie , Isamu Aokura , Yoshihiko Yagi , Kazuki Fukada
IPC分类号: H01L21/60 , H01L21/603 , H05K3/32 , H01L21/58
CPC分类号: B23K1/203 , B23K2101/40 , H01L21/4864 , H01L21/6835 , H01L23/3142 , H01L24/75 , H01L24/81 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/1134 , H01L2224/1181 , H01L2224/1184 , H01L2224/13019 , H01L2224/13144 , H01L2224/749 , H01L2224/75 , H01L2224/75301 , H01L2224/75753 , H01L2224/81009 , H01L2224/81011 , H01L2224/81012 , H01L2224/81013 , H01L2224/81191 , H01L2224/81395 , H01L2224/81801 , H01L2224/8182 , H01L2224/81894 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01021 , H01L2924/01025 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H05K3/328 , H05K3/3489 , H05K3/383 , H05K2201/0373 , H05K2201/10674 , H05K2203/0307 , Y10S438/974 , Y10T156/1023 , Y10T156/14 , H01L2224/05599
摘要: A bonding method and an apparatus that enable metal bonding under the atmospheric pressure and at room temperature, wherein the surfaces of objects (1b, 2a) to be bonded together are cleaned in an initial cleaning step (S1) to remove bonding inhibitor substances (G) such as oxides and adhered substances; one (1b) of the bonding surfaces is provided with an uneven profile with a predetermined roughness in a surface roughness control step (S3); a surface treatment step (S5) is performed to remove the substances (F) that have been removed but adhered to the bonding surfaces (1b, 2a) again; and the uneven bonding surface (1b) is pressed against the other bonding surface (2a) to bond them together.
摘要翻译: 在大气压和室温下能够进行金属接合的接合方法和装置,其中在初始清洁步骤(S1)中清洁要结合在一起的物体(1b,2a)的表面以除去粘合抑制剂物质(G )如氧化物和附着物质; 一个(1b)的接合表面在表面粗糙度控制步骤(S3)中设置有具有预定粗糙度的不平坦轮廓; 执行表面处理步骤(S5)以除去已经去除但再次粘合到接合表面(1b,2a)上的物质(F); 并且不平坦的接合表面(1b)被压靠在另一个接合表面(2a)上以将它们结合在一起。
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公开(公告)号:US20080087993A1
公开(公告)日:2008-04-17
申请号:US11826673
申请日:2007-07-17
申请人: Isamu Aokura , Toshiyuki Fukuda , Yukitoshi Ota , Keiji Miki
发明人: Isamu Aokura , Toshiyuki Fukuda , Yukitoshi Ota , Keiji Miki
IPC分类号: H01L23/495 , H01L21/60
CPC分类号: H01L24/81 , H01L23/13 , H01L23/49816 , H01L23/5386 , H01L24/16 , H01L25/0655 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/056 , H01L2224/10175 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/26175 , H01L2224/32225 , H01L2224/45124 , H01L2224/48465 , H01L2224/49171 , H01L2224/8121 , H01L2224/81815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/10253 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/1532 , H01L2924/157 , H01L2924/19107 , H01L2924/351 , H01L2924/00
摘要: A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.
摘要翻译: 根据本发明的半导体器件包括在电极焊盘上形成有焊料凸点(24)(突出电极)的IC芯片(半导体元件)(2,3,4)和具有连接端子的第一布线板(1) 7),IC芯片(2,3,4)的各个焊料凸块(24)连接到其上,用于连接到外部设备的外部连接端子(8)和形成在各个槽部分中的导线(9) 在板表面上并连接到相应的连接端子(7)。 尽管导体线(9)的间距减小,但是沟槽部分的存在使得横截面增加,从而允许降低布线电阻。
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