公开(公告)号：US07728429B2

公开(公告)日：2010-06-01

申请号：US11826673

申请日：2007-07-17

申请人： Isamu Aokura ,  Toshiyuki Fukuda ,  Yukitoshi Ota ,  Keiji Miki

发明人： Isamu Aokura ,  Toshiyuki Fukuda ,  Yukitoshi Ota ,  Keiji Miki

IPC分类号： H01L23/495

CPC分类号： H01L24/81 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/5386 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/10175 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/157 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

摘要翻译： 根据本发明的半导体器件包括在电极焊盘上形成有焊料凸点（24）（突出电极）的IC芯片（半导体元件）（2,3,4）和具有连接端子的第一布线板（1） 7），IC芯片（2,3,4）的各个焊料凸块（24）连接到其上，用于连接到外部设备的外部连接端子（8）和形成在各个槽部分中的导线（9） 在板表面上并连接到相应的连接端子（7）。 尽管导体线（9）的间距减小，但是沟槽部分的存在使得横截面增加，从而允许降低布线电阻。

公开(公告)号：US20080087993A1

公开(公告)日：2008-04-17

申请号：US11826673

申请日：2007-07-17

申请人： Isamu Aokura ,  Toshiyuki Fukuda ,  Yukitoshi Ota ,  Keiji Miki

发明人： Isamu Aokura ,  Toshiyuki Fukuda ,  Yukitoshi Ota ,  Keiji Miki

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L24/81 ,  H01L23/13 ,  H01L23/49816 ,  H01L23/5386 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/10175 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/157 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00

摘要： A semiconductor device in accordance with the present invention includes IC chips (semiconductor elements) (2, 3, 4) having solder bumps (24) (projecting electrodes) formed on electrode pads, and a first wiring board (1) having connection terminals (7) to which the respective solder bumps (24) of the IC chips (2, 3, 4) are connected, external connection terminals (8) for connection to an external apparatus, and conductor wires (9) provided in respective groove portions formed in a board surface and connected to the respective connection terminals (7). In spite of the reduced pitch of the conductor wires (9), the presence of the groove portions enables an increase in cross section, allowing a reduction in wiring resistance.

摘要翻译： 根据本发明的半导体器件包括在电极焊盘上形成有焊料凸点（24）（突出电极）的IC芯片（半导体元件）（2,3,4）和具有连接端子的第一布线板（1） 7），IC芯片（2,3,4）的各个焊料凸块（24）连接到其上，用于连接到外部设备的外部连接端子（8）和形成在各个槽部分中的导线（9） 在板表面上并连接到相应的连接端子（7）。 尽管导体线（9）的间距减小，但是沟槽部分的存在使得横截面增加，从而允许降低布线电阻。

公开(公告)号：US08390117B2

公开(公告)日：2013-03-05

申请号：US12331467

申请日：2008-12-10

申请人： Yoshiaki Shimizu ,  Yuichiro Yamada ,  Toshiyuki Fukuda

发明人： Yoshiaki Shimizu ,  Yuichiro Yamada ,  Toshiyuki Fukuda

IPC分类号： H01L23/482 ,  H01L23/488 ,  H01L21/44

CPC分类号： H05K3/38 ,  B29C43/18 ,  B29C45/02 ,  B29C45/14655 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/16 ,  H01L24/27 ,  H01L24/28 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/743 ,  H01L24/83 ,  H01L24/85 ,  H01L25/105 ,  H01L2224/05554 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83856 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/1517 ,  H01L2924/15173 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/3511 ,  H05K3/3457 ,  H05K2201/0379 ,  H05K2201/10515 ,  H05K2201/10977 ,  H05K2203/0278 ,  H01L2924/00014 ,  H01L2924/07025 ,  H01L2924/0635 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/00012 ,  H01L2924/0695

摘要： A semiconductor device capable of realizing highly reliable three-dimensional mounting, and a method of manufacturing the same, are provided. A projected electrode 9 is formed in a region outside of an element mounting region of a substrate 5. The projected electrode 9 includes a protruding portion that protrudes from the front face of a molding resin portion 10. The distal end of the protruding portion is a flat face 13. In addition, a portion of the projected electrode 9 whose cross section is larger than the protruding portion is positioned inside the molding resin portion 10.

摘要翻译： 提供能够实现高度可靠的三维安装的半导体器件及其制造方法。 突起电极9形成在基板5的元件安装区域的外侧的区域中。突出电极9包括从模制树脂部分10的前表面突出的突出部分。突出部分的远端是 另外，突出电极9的横截面大于突出部分的部分位于模制树脂部分10的内部。

公开(公告)号：US20110254094A1

公开(公告)日：2011-10-20

申请号：US13067721

申请日：2011-06-22

申请人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

发明人： Takayuki Yoshida ,  Kimihito Kuwabara ,  Takuma Motofuji ,  Toshiyuki Fukuda

IPC分类号： H01L29/772

CPC分类号： H01L21/823807 ,  H01L21/823871 ,  H01L24/10 ,  H01L29/7842 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05548 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor device 20 formed on a semiconductor chip substrate 30 has a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor 36, the circuit blocks being covered on top with a protective film 41 to protect the circuits. A plurality of bumps 23a, 23b, 23c are formed, at least via the protective film 41, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumps 23a, 23b, 23c impose stresses on the MOS transistors 36, increasing the mobility of the MOS transistors 36 and thereby improving the performance of the semiconductor device 20.

摘要翻译： 形成在半导体芯片基板30上的半导体装置20具有由至少包含金属氧化物半导体（MOS）晶体管36的电路构成的多个电路块，电路块由保护膜41覆盖在顶部，以保护 电路。 至少通过保护膜41仅形成多个凸起23a，23b，23c，其电流承载能力和阈值电压不满足预定值并且需要性能提高的电路块。 凸起23a，23b，23c在MOS晶体管36上施加应力，增加MOS晶体管36的迁移率，从而提高半导体器件20的性能。

公开(公告)号：US07939933B2

公开(公告)日：2011-05-10

申请号：US12537511

申请日：2009-08-07

申请人： Kenichi Itou ,  Noboru Takeuchi ,  Shigetoyo Kawakami ,  Toshiyuki Fukuda

发明人： Kenichi Itou ,  Noboru Takeuchi ,  Shigetoyo Kawakami ,  Toshiyuki Fukuda

IPC分类号： H01L23/48

CPC分类号： H01L21/568 ,  H01L21/4828 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/49548 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/16145 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48644 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73265 ,  H01L2224/83001 ,  H01L2224/85001 ,  H01L2224/85385 ,  H01L2224/85444 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/20752 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

摘要翻译： 半导体器件包括：半导体元件; 安装有半导体元件的管芯焊盘; 多个电极端子，每个电极端子具有与半导体元件电连接的连接部分; 以及用于密封半导体元件，芯片焊盘和电极端子的密封树脂，使得与具有连接部分的表面相反侧的每个电极端子的表面作为外部端子表面露出。 在每个电极端子的与连接部分的表面上形成具有平面形状的凹部，并且凹部布置在从密封树脂的外缘侧面露出的电极端子的端部与连接部 一部分。 尽管通过减轻施加到电极端子的外力来保持用于抑制电极端子和密封树脂之间的剥离的结构的功能，但可以使半导体器件小型化。

公开(公告)号：US20110083322A1

公开(公告)日：2011-04-14

申请号：US12970407

申请日：2010-12-16

申请人： Masanori MINAMIO ,  Yutaka Harada ,  Kiyokazu Itoi ,  Toshiyuki Fukuda

发明人： Masanori MINAMIO ,  Yutaka Harada ,  Kiyokazu Itoi ,  Toshiyuki Fukuda

IPC分类号： H01R43/00

CPC分类号： H01L27/14618 ,  H01L24/97 ,  H01L27/14683 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  Y10T29/49117 ,  H01L2224/85 ,  H01L2924/00014

摘要： An optical device includes a substrate, an optical element, a translucent component, a plurality of first terminals and a sealant. The sealant is located lower than the top surface of the translucent component. The top surface of the translucent component is exposed out of the sealant, while the side surface of the translucent component is covered with the sealant.

摘要翻译： 光学装置包括基板，光学元件，半透明部件，多个第一端子和密封剂。 密封剂位于比半透明组件的顶表面更低的位置。 半透明部件的顶面从密封剂露出，而半透明部件的侧表面被密封剂覆盖。

公开(公告)号：US20110001208A1

公开(公告)日：2011-01-06

申请号：US12918023

申请日：2009-02-26

申请人： Junya Furuyashiki ,  Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Toshimasa Itooka ,  Hiroki Utatsu

发明人： Junya Furuyashiki ,  Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Toshimasa Itooka ,  Hiroki Utatsu

IPC分类号： H01L31/0203 ,  H01L31/18 ,  H01L35/22

CPC分类号： H01L31/0203 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05553 ,  H01L2224/451 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/78301 ,  H01L2224/8518 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10161 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2224/4554

摘要： An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.

摘要翻译： 在半导体元件的光接收部周围的部分设置有绝缘体，在绝缘体周围设置密封树脂，从而从光接收部观察时向外翘曲绝缘体，防止扩散光返回到受光部 的半导体元件。

公开(公告)号：US20100308468A1

公开(公告)日：2010-12-09

申请号：US12867804

申请日：2009-03-02

申请人： Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Junya Furuyashiki ,  Toshimasa Itooka ,  Hiroki Utatsu

发明人： Noriyuki Yoshikawa ,  Toshiyuki Fukuda ,  Junya Furuyashiki ,  Toshimasa Itooka ,  Hiroki Utatsu

IPC分类号： H01L23/28 ,  H01L21/78

CPC分类号： H01L23/49805 ,  H01L23/3107 ,  H01L23/49541 ,  H01L23/49548 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor device made of a plurality of materials, if the device is fabricated through a step of cutting the bonded plurality of materials, a boundary line of the plurality of materials is exposed on a cutting plane. Internal stress in the cutting remains at this boundary line to allow moisture and corrosive gas to easily enter into the device. In order to reduce the entrance of the moisture, the gas, and the like, the boundary appearing on the cutting plane is covered by a covering layer. At this time, partial cutting exposing the boundary line and not separating semiconductor devices are performed so that the covering layer can be formed with the plurality of semiconductor devices attached to the substrate.

摘要翻译： 在由多种材料制成的半导体器件中，如果通过切割粘合的多种材料的步骤制造器件，则在切割平面上暴露多种材料的边界线。 切割中的内部应力保持在该边界线处，以允许湿气和腐蚀性气体容易地进入该装置。 为了减少水分，气体等的入口，出现在切割平面上的边界被覆盖层覆盖。 此时，进行露出边界线而不分离半导体器件的部分切割，使得覆盖层可以形成有附接到基板的多个半导体器件。

公开(公告)号：US07822090B2

公开(公告)日：2010-10-26

申请号：US12186979

申请日：2008-08-06

申请人： Masanori Minamio ,  Noriyuki Yoshikawa ,  Shinichi Ijima ,  Toshiyuki Fukuda

发明人： Masanori Minamio ,  Noriyuki Yoshikawa ,  Shinichi Ijima ,  Toshiyuki Fukuda

IPC分类号： H01S5/00 ,  H01S3/30 ,  H01S3/04 ,  H01L29/16

CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01L2224/48091 ,  H01S5/0021 ,  H01S5/0071 ,  H01S5/02212 ,  H01S5/02216 ,  H01S5/02224 ,  H01S5/02248 ,  H01S5/02292 ,  H01S5/024 ,  H01S5/02476 ,  H01S5/028 ,  H01S5/34333 ,  H01L2924/00014

摘要： A semiconductor device includes an optical semiconductor element, a package including a base made of a metal for mounting the optical semiconductor element, and a cap for encapsulating the optical semiconductor element and a gas by covering the package and the optical semiconductor element. The gas encapsulated with the package has an oxygen concentration not less than 15% and less than 30% and has a dew-point not less than −15° C. and not more than −5° C.

摘要翻译： 半导体器件包括光学半导体元件，包括由用于安装光学半导体元件的金属制成的基座的封装以及用于通过覆盖封装和光学半导体元件来封装光学半导体元件的盖和气体。 用包装封装的气体的氧浓度不小于15％且小于30％，露点不低于-15℃且不大于-5℃。

公开(公告)号：US07719119B2

公开(公告)日：2010-05-18

申请号：US11584518

申请日：2006-10-23

申请人： Noriyuki Yoshikawa ,  Noboru Takeuchi ,  Kenichi Itou ,  Toshiyuki Fukuda

发明人： Noriyuki Yoshikawa ,  Noboru Takeuchi ,  Kenichi Itou ,  Toshiyuki Fukuda

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49811 ,  H01L21/4846 ,  H01L23/49827 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/1423 ,  H01L2924/15311 ,  H01L2924/181 ,  H05K1/113 ,  H05K3/3436 ,  H05K2201/0367 ,  H05K2201/0394 ,  H05K2201/09509 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.

摘要翻译： 半导体器件具有上部电极和外部端子，该上部电极和外部端子突出在半导体器件用基板的两面之上，并且通过穿透电极彼此连接，除了第一绝缘膜的部分之外至少覆盖金属图案的第一绝缘膜 对应于上部电极的第二绝缘膜，覆盖除了与外部端子对应的第二绝缘膜的部分之外的至少另一种金属图案的第二绝缘膜，以及连接到上部电极并放置在半导体器件的基板上的半导体元件。 外部端子的焊接连接表面被定位成具有比第二绝缘膜的表面高的高度。 将半导体元件放置在第一绝缘膜上并与上部电极一起用模制树脂覆盖。