公开(公告)号：US06926775B2

公开(公告)日：2005-08-09

申请号：US10365085

申请日：2003-02-11

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/45519 ,  C23C16/45544

摘要： Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

摘要翻译： 具有用于将材料沉积到微器件工件上的气体分配器的反应器，包括这种反应器的系统以及将材料沉积到微器件工件上的方法在本文中公开。 在一个实施例中，用于将材料沉积到微器件工件上的反应器包括反应室，通道和门组件。 反应室包括配置成在工件保持器上向微器件工件提供气体流的气体分配器。 具有通向反应室的第一端和远离反应室的第二端的通道构造成提供从腔室进入和离开以处理微器件工件。 门组件构造成在通道的第二端处打开并密封地关闭门。 定位在门中的气体调节系统构造成保持通道中气体成分的期望浓度和相位。

公开(公告)号：US06838114B2

公开(公告)日：2005-01-04

申请号：US10155547

申请日：2002-05-24

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/52

摘要： Methods for depositing materials onto micro-device workpieces in a reaction chamber. One embodiment of such a method comprises providing a flow of a first precursor through the reaction chamber to deposit the first precursor onto the micro-device workpiece in the reaction chamber, and providing a flow of a purge gas through the reaction chamber to purge excess amounts of the first precursor. The method continues by monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas in the reaction chamber as the first precursor and/or the purge gas flows through the reaction chamber. An additional aspect of this method is terminating the flow of the first precursor and/or the flow of the purge gas based on the monitored parameter of the quantity of the first precursor and/or the purge gas. The procedure of monitoring a parameter correlated to a quantity of the first precursor and/or the purge gas can comprise determining a concentration of the first precursor and/or the purge gas in the reaction chamber using a selected radiation.

摘要翻译： 在反应室中将材料沉积到微器件工件上的方法。 这种方法的一个实施方案包括提供通过反应室的第一前体的流动，以将第一前体沉积在反应室中的微器件工件上，并且提供净化气体流过反应室以净化过量 的第一个前体。 当第一前体和/或吹扫气体流过反应室时，通过监测与反应室中的第一前体和/或吹扫气体的量相关的参数来继续该方法。 该方法的另一方面是基于所监测的第一前体和/或吹扫气体的量的参数来终止第一前体和/或吹扫气体的流动。 监测与第一前体和/或吹扫气体的量相关的参数的程序可以包括使用所选择的辐射确定反应室中的第一前体和/或吹扫气体的浓度。

公开(公告)号：US06821347B2

公开(公告)日：2004-11-23

申请号：US10191889

申请日：2002-07-08

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

IPC分类号： B05C318

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

公开(公告)号：US06797337B2

公开(公告)日：2004-09-28

申请号：US10223175

申请日：2002-08-19

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

IPC分类号： B05D300

CPC分类号： C23C16/4481

摘要： A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

摘要翻译： 提供了用于将前体输送到化学气相沉积或原子层沉积室的方法和装置。 该装置包括含有前体的温度控制容器。 使用能源在其表面蒸发前体，使得基本上不会发生剩余前体的热分解。 能量源可以包括载气，射频耦合装置或红外辐射源。 在前体暴露于能量源之后，前体的蒸发部分通过温度控制的导管输送到化学气相沉积或原子沉积室，用于进一步处理。

公开(公告)号：US06412437B1

公开(公告)日：2002-07-02

申请号：US09642745

申请日：2000-08-18

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing, material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing. showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在所述反应器的重新组装期间至少包括连接所述导电RF功率的喷头支撑电极和导电气体分布，在所述导电RF供电的喷头支撑电极和所述导电气体喷射支撑电极之间夹着导电材料。 淋浴头在一起 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US06054807A

公开(公告)日：2000-04-25

申请号：US742667

申请日：1996-11-05

申请人： Craig M. Carpenter

发明人： Craig M. Carpenter

IPC分类号： H01J3/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC分类号： H01J3/022

摘要： A base structure for use with a flat panel field emission display device. A spacer layer is provided in the base assembly to generally planarize the base assembly prior to mechanical planarization. As a result, the base assembly is more reliable and permits improved manufacturing yields. In addition to improving planarity of the base assembly, the spacer layer may increase electrical isolation between the base electrodes and the grid electrodes of the field emission display.

摘要翻译： 一种用于平板式场致发射显示装置的基座结构。 间隔层设置在基座组件中，以在机械平面化之前大致平坦化基座组件。 结果，基座组件更可靠并且允许改进的制造成品率。 除了改善基座组件的平面性之外，间隔层可以增加基极和场发射显示器的栅电极之间的电隔离。

公开(公告)号：US08382920B2

公开(公告)日：2013-02-26

申请号：US11715259

申请日：2007-03-07

申请人： Craig M. Carpenter ,  James D. Maguire, Jr.

发明人： Craig M. Carpenter ,  James D. Maguire, Jr.

IPC分类号： C22F1/18

CPC分类号： B21B1/026 ,  B21B1/0805 ,  C22C27/02 ,  C22F1/18 ,  C22F1/183 ,  C23C14/3414 ,  Y10T428/12993

摘要： A method of making metal articles as well as sputtering targets is described, which involves deforming an ingot to preferred dimensions. In addition, products made by the process of the present invention are further described.

公开(公告)号：US07767365B2

公开(公告)日：2010-08-03

申请号：US11515089

申请日：2006-08-31

申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G03F1/00

CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。

公开(公告)号：US07481887B2

公开(公告)日：2009-01-27

申请号：US11027809

申请日：2004-12-29

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： C23C16/45525 ,  C23C16/52

摘要： An apparatus for depositing materials onto a micro-device workpiece includes a gas source system configured to provide a first precursor, a second precursor, and a purge gas. The apparatus can also include a valve assembly coupled to the gas source system. The valve assembly is configured to control a flow of the first precursor, a flow the second precursor, and a flow of the purge gas. Another component of the apparatus is a reaction chamber including an inlet coupled to the valve assembly, a workpiece holder in the reaction chamber, and an outlet downstream from the workpiece holder. The apparatus also includes a monitoring system and a controller. The monitoring system comprises a radiation source that directs a selected radiation through the reaction chamber and a detector that senses a parameter of the radiation directed through the reaction chamber. The controller is operatively coupled to the monitoring system and the valve assembly. The controller contains computer operable instructions to terminate the flow of the first precursor, the flow of the second precursor and/or the flow of the purge gas based on the parameter sensed by the monitoring system in real-time during a deposition cycle of a workpiece.

摘要翻译： 用于将材料沉积到微器件工件上的装置包括构造成提供第一前体，第二前体和吹扫气体的气体源系统。 该装置还可以包括联接到气源系统的阀组件。 阀组件被配置为控制第一前体的流动，第二前体的流动和净化气体的流动。 该装置的另一部件是反应室，其包括联接到阀组件的入口，反应室中的工件保持器和工件保持器下游的出口。 该装置还包括监视系统和控制器。 监测系统包括将选定的辐射引导通过反应室的辐射源和感测通过反应室引导的辐射的参数的检测器。 控制器可操作地耦合到监视系统和阀组件。 控制器包含计算机可操作的指令，以在工件的沉积循环期间实时地基于由监测系统感测的参数终止第一前体的流动，第二前体的流动和/或吹扫气体的流动 。

公开(公告)号：US07427425B2

公开(公告)日：2008-09-23

申请号：US10932470

申请日：2004-09-01

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Danny Dynka

IPC分类号： C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/45519 ,  C23C16/45544

摘要： Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

摘要翻译： 具有用于在微器件工件上沉积材料的气体分配器的反应器，包括这种反应器的系统以及将材料沉积到微器件工件上的方法。 在一个实施例中，用于将材料沉积到微器件工件上的反应器包括反应室，通道和门组件。 反应室包括配置成在工件保持器上向微器件工件提供气体流的气体分配器。 具有通向反应室的第一端和远离反应室的第二端的通道构造成提供从腔室进入和离开以处理微器件工件。 门组件构造成在通道的第二端处打开并密封地关闭门。 定位在门中的气体调节系统构造成保持通道中气体成分的期望浓度和相位。