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公开(公告)号：US20050181587A1
公开(公告)日：2005-08-18
申请号：US11106340
申请日：2005-04-13
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L21/336 , H01L21/38 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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公开(公告)号：US20070228439A1
公开(公告)日：2007-10-04
申请号：US11760382
申请日：2007-06-08
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L29/786
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
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公开(公告)号：US20060211183A1
公开(公告)日：2006-09-21
申请号：US11405864
申请日：2006-04-18
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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公开(公告)号：US20070012980A1
公开(公告)日：2007-01-18
申请号：US11490637
申请日：2006-07-21
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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公开(公告)号：US20070120167A1
公开(公告)日：2007-05-31
申请号：US11602783
申请日：2006-11-21
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L29/94
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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公开(公告)号：US20060151820A1
公开(公告)日：2006-07-13
申请号：US11341711
申请日：2006-01-30
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
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公开(公告)号：US20050110064A1
公开(公告)日：2005-05-26
申请号：US11004380
申请日：2004-12-03
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： G11C13/02 , H01L21/336 , H01L21/38 , H01L21/77 , H01L21/8234 , H01L27/108 , H01L29/04 , H01L29/06 , H01L29/76 , H01L29/786 , H01L29/94 , H01L31/119 , H01L33/20 , H01L51/00 , H01L51/05
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
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公开(公告)号：US20050079659A1
公开(公告)日：2005-04-14
申请号：US10674060
申请日：2003-09-30
申请人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人： Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号： G11C13/02 , H01L21/336 , H01L21/38 , H01L21/77 , H01L21/8234 , H01L27/108 , H01L29/04 , H01L29/06 , H01L29/76 , H01L29/786 , H01L29/94 , H01L31/119 , H01L33/20 , H01L51/00 , H01L51/05
CPC分类号： H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。
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公开(公告)号：US08563133B2
公开(公告)日：2013-10-22
申请号：US11299299
申请日：2005-12-09
申请人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
发明人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： B05D5/12 , C07F5/025 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).
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公开(公告)号：US20080118755A1
公开(公告)日：2008-05-22
申请号：US11299299
申请日：2005-12-09
申请人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
发明人： Jeffery A. Whiteford , Mihai A. Buretea , Jian Chen , William P. Freeman , Andreas Meisel , Linh Nguyen , J. Wallace Parce , Erik Scher
IPC分类号： B32B5/16
CPC分类号： B05D5/12 , C07F5/025 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e.g., by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc.).
摘要翻译： 提供了用于制备离散涂层纳米结构的配体组合物，以及涂覆的纳米结构本身和结合其的装置。 还提供了用于纳米结构上沉积后壳形成，用于可逆修饰纳米结构和用于操纵纳米结构的电子性质的方法。 本发明的配体和包被的纳米结构对于紧密堆积的纳米结构组合物是特别有用的，其可以改进纳米结构的量子限制和/或减少的串扰。 本发明的配体还可用于操纵纳米结构组合物的电子性质（例如，通过调节能级，产生内部偏置场，减少电荷转移或泄漏等）。
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