-
公开(公告)号:US20070228439A1
公开(公告)日:2007-10-04
申请号:US11760382
申请日:2007-06-08
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号: H01L29/786
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号:US20060211183A1
公开(公告)日:2006-09-21
申请号:US11405864
申请日:2006-04-18
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
CPC分类号: H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
公开(公告)号:US5714626A
公开(公告)日:1998-02-03
申请号:US656094
申请日:1996-05-31
申请人: Charles Abma , Peter Frenkel , Lawrence Bock , Anthony Andrews , Michael Wells
发明人: Charles Abma , Peter Frenkel , Lawrence Bock , Anthony Andrews , Michael Wells
IPC分类号: C07C407/00 , C07C409/00 , C07C69/96
CPC分类号: C07C407/006
摘要: Organic peroxide compositions which contain a .beta.-dicarbonyl compound to retard the rate of decomposition of the peroxide compound are disclosed.
摘要翻译: 公开了含有β-二羰基化合物以延缓过氧化物化合物分解速率的有机过氧化物组合物。
-
公开(公告)号:US07851841B2
公开(公告)日:2010-12-14
申请号:US11760382
申请日:2007-06-08
申请人: Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen A. Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David P. Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号: H01L27/108 , H01L29/94
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号:US20100155696A1
公开(公告)日:2010-06-24
申请号:US11681058
申请日:2007-03-01
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
-
6.
公开(公告)号:US07067867B2
公开(公告)日:2006-06-27
申请号:US10674060
申请日:2003-09-30
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号: H01L27/108 , H01L29/94 , H01L29/76 , H01L21/336 , H01L21/8234
CPC分类号: H01L29/78696 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/18 , H01L24/95 , H01L27/1292 , H01L29/04 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/78684 , H01L29/7869 , H01L33/20 , H01L51/0048 , H01L51/0052 , H01L51/0541 , H01L51/0545 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号:US20050027144A1
公开(公告)日:2005-02-03
申请号:US10874906
申请日:2004-06-23
申请人: Peter Frenkel , Delphine Meeh , Lawrence Bock , Anthony Andrews
发明人: Peter Frenkel , Delphine Meeh , Lawrence Bock , Anthony Andrews
IPC分类号: C07C407/00 , C07C409/00
CPC分类号: C07C407/003 , C07C409/16
摘要: A process is disclosed for reducing the concentration of a dialkyl ether in a mixture comprising the dialkyl ether and a dialkyl peroxide wherein the process comprises treating said mixture with a strong acid.
摘要翻译: 公开了一种降低二烷基醚在包含二烷基醚和二烷基过氧化物的混合物中的浓度的方法,其中该方法包括用强酸处理所述混合物。
-
公开(公告)号:US07932511B2
公开(公告)日:2011-04-26
申请号:US11681058
申请日:2007-03-01
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda T. Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Wallace Parce , Jay L. Goldman
IPC分类号: H01L29/06
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
-
公开(公告)号:US20070120167A1
公开(公告)日:2007-05-31
申请号:US11602783
申请日:2006-11-21
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号: H01L29/94
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
-
10.
公开(公告)号:US20060151820A1
公开(公告)日:2006-07-13
申请号:US11341711
申请日:2006-01-30
申请人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
发明人: Xiangfeng Duan , Chunming Niu , Stephen Empedocles , Linda Romano , Jian Chen , Vijendra Sahi , Lawrence Bock , David Stumbo , J. Parce , Jay Goldman
IPC分类号: H01L29/94 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号: H01L29/0665 , B82Y10/00 , H01F1/405 , H01L27/092 , H01L27/12 , H01L27/1292 , H01L29/0673 , H01L29/068 , H01L29/78696 , H01L31/035281 , H01L33/18 , H01L33/20 , H01L33/24 , H01L51/0048 , H01L51/0504 , H01L51/0545 , H01L51/0595 , Y10S977/742 , Y10S977/762 , Y10S977/781 , Y10S977/789 , Y10S977/938
摘要: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.
摘要翻译: 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点,从而提供与多个半导体器件的电连接。 此外,用于制造纳米线的各种材料,包括p掺杂纳米线和n掺杂纳米线的薄膜,纳米线异质结构,发光纳米线异质结构,用于在衬底上定位纳米线的流动掩模,用于沉积纳米线的纳米线喷涂技术,用于减少或消除声子的技术 描述了纳米线中的电子散射,以及用于降低纳米线中的表面状态的技术。
-
-
-
-
-
-
-
-
-