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20 条记录 (耗时 0.029 秒)

    MASTER GLASS HAVING STRUCTURE CAPABLE OF PREVENTING DAMAGE CAUSED BY STATIC ELECTRICITY
    11.
    发明申请
    MASTER GLASS HAVING STRUCTURE CAPABLE OF PREVENTING DAMAGE CAUSED BY STATIC ELECTRICITY 有权
    具有防止静电引起的损伤的结构的主玻璃

    公开(公告)号：US20110043095A1

    公开(公告)日：2011-02-24

    申请号：US12837354

    申请日：2010-07-15

    申请人： Jae-Yong Lee ,  Won-Kyu Kwak ,  Jae-Jung Kim ,  Tae-Jin Park ,  Dong-Young Sung

    发明人： Jae-Yong Lee ,  Won-Kyu Kwak ,  Jae-Jung Kim ,  Tae-Jin Park ,  Dong-Young Sung

    IPC分类号： F21K2/08 ,  H05K1/00 ,  H05K1/11

    CPC分类号： H05K1/0259 ,  H01L27/3223 ,  H01L51/56 ,  H05K1/0269 ,  H05K2201/0108 ,  H05K2201/10204 ,  H05K2203/173

    摘要： There is provided a master glass having a structure capable of preventing damage caused by static electricity. The master glass is a substrate on which a deposition process is experimentally performed by being experimentally loaded loading the master glass into a deposition apparatus before starting the deposition process of the substrate for electronic devices. In one embodiment, a master glass includes first conductive patterns and a second conductive pattern. The first conductive patterns are formed to correspond to a deposition pattern required in a substrate for electronic devices. The second conductive pattern electrically connects all the first conductive patterns to one another.

    摘要翻译： 提供了具有能够防止由静电引起的损坏的结构的主玻璃。 主玻璃是通过在开始用于电子设备的基板的沉积工艺之前通过实验负载将主玻璃加载到沉积设备中而实验沉积过程的基板。 在一个实施例中，主玻璃包括第一导电图案和第二导电图案。 形成第一导电图案以对应于用于电子设备的基板中所需的沉积图案。 第二导电图案将所有第一导电图案彼此电连接。

    Aerogel type platinum-tuthenium-carbon catalyst, method for manufacturing the same and direct methanol fuel cell comprising the same
    14.
    发明授权
    Aerogel type platinum-tuthenium-carbon catalyst, method for manufacturing the same and direct methanol fuel cell comprising the same 失效
    气凝胶型铂 - 钌 - 碳催化剂，其制造方法和包含该催化剂的直接甲醇燃料电池

    公开(公告)号：US06809060B2

    公开(公告)日：2004-10-26

    申请号：US10299679

    申请日：2002-11-20

    申请人： Dong Jin Suh ,  Tae-Jin Park ,  Young-Hyun Yoon ,  Kang Hee Lee ,  Il Gon Kim

    发明人： Dong Jin Suh ,  Tae-Jin Park ,  Young-Hyun Yoon ,  Kang Hee Lee ,  Il Gon Kim

    IPC分类号： B01J2118

    CPC分类号： H01M4/921 ,  B01J21/18 ,  B01J23/40 ,  B01J23/462 ,  B01J37/084 ,  B01J37/18 ,  H01M4/8605 ,  H01M4/926 ,  H01M8/1004 ,  Y02E60/523 ,  Y02P70/56

    摘要： An aerogel type platinum-ruthenium-carbon catalyst of microporous structure maintaining long-term high catalytic activity, suitable for a direct methanol fuel cell, is manufactured by a sol-gel process, and supercritical drying while maintaining a microporous structure. The catalyst contains 5 to 70% by weight of platinum and ruthenium, remainder carbon, the platinum and ruthenium atomic ratio being of 1/4 to 4/1. Metal salts and base catalyst are added to a solution of organic gel materials, a solution of basic amine is added to the first solution, and the pH of the resulting solution is adjusted forming a sol, the sol is aged at 40 to 90 for 1 to 20 days forming and stabilizing the gel, solvent is removed from the gel by supercritical drying, and finally the aerogel is carbonized in an inert atmosphere, followed by hydrogen reduction.

    摘要翻译： 通过溶胶 - 凝胶法制备适用于直接甲醇燃料电池的保持长期高催化活性的微孔结构的气溶胶型铂 - 钌 - 碳催化剂，同时保持微孔结构。 该催化剂含有5至70重量％的铂和钌，余量为碳，铂和钌的原子比为1/4至4/1。 将金属盐和碱催化剂加入到有机凝胶材料的溶液中，将碱性胺溶液加入到第一溶液中，调节所得溶液的pH以形成溶胶，将溶胶在40〜90℃老化1 至20天形​​成和稳定凝胶，通过超临界干燥从凝胶中除去溶剂，最后将气凝胶在惰性气氛中碳化，然后氢还原。

    Method of aligning a wafer stage and apparatus for performing the same
    15.
    发明授权
    Method of aligning a wafer stage and apparatus for performing the same 有权
    对准晶片台的方法及其执行方法

    公开(公告)号：US09007567B2

    公开(公告)日：2015-04-14

    申请号：US13221360

    申请日：2011-08-30

    申请人： Tae-Jin Park ,  Cheol-Hong Kim

    发明人： Tae-Jin Park ,  Cheol-Hong Kim

    IPC分类号： G03B27/32 ,  G03B27/58 ,  G03B27/53 ,  G03F7/20 ,  G03F9/00

    CPC分类号： G03B27/58 ,  G03B27/53 ,  G03F7/70775 ,  G03F9/7088

    摘要： In a method of aligning a wafer stage, the wafer stage may be moved in an X-axis direction. A first coordinate of the wafer stage may be measured from a first measurement position inclined to the X-axis. The wafer stage may be moved in a Y-axis direction. A second coordinate of the wafer stage may be measured from a second measurement position inclined to the Y-axis. Thus, a movement distance of the wafer stage may be increased, so that the interferometers may accurately measure the position of the wafer stage.

    摘要翻译： 在对准晶片台的方法中，晶片台可以在X轴方向上移动。 可以从倾斜于X轴的第一测量位置测量晶片台的第一坐标。 晶片载物台可沿Y轴方向移动。 可以从与Y轴倾斜的第二测量位置测量晶片台的第二坐标。 因此，可以增加晶片台的移动距离，使得干涉仪可以精确地测量晶片台的位置。

    Method of fabricating semiconductor device
    17.
    发明申请
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20130005110A1

    公开(公告)日：2013-01-03

    申请号：US13478450

    申请日：2012-05-23

    申请人： Jun-Ho Yoon ,  Bong-Jin Kuh ,  Ki-Chul Kim ,  Gyung-Jin Min ,  Tae-Jin Park ,  Sang-Ryol Yang ,  Jung-Min Oh ,  Sang-Yoon Woo ,  Young-Sub Yoo ,  Ji-Eun Lee ,  Jong-Sung Lim ,  Yong-Moon Jang ,  Han-Mei Choi ,  Je-Woo Han

    发明人： Jun-Ho Yoon ,  Bong-Jin Kuh ,  Ki-Chul Kim ,  Gyung-Jin Min ,  Tae-Jin Park ,  Sang-Ryol Yang ,  Jung-Min Oh ,  Sang-Yoon Woo ,  Young-Sub Yoo ,  Ji-Eun Lee ,  Jong-Sung Lim ,  Yong-Moon Jang ,  Han-Mei Choi ,  Je-Woo Han

    IPC分类号： H01L21/02

    CPC分类号： H01L28/90 ,  H01L27/10852

    摘要： Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

    摘要翻译： 提供一种制造具有电容器的半导体器件的方法。 该方法包括形成复合层，包括顺序地堆叠在第一至第n牺牲层和第一至第n支撑层上的交替层上的衬底上。 形成贯穿复合层的多个开口。 在多个开口中形成下电极。 去除第一至第n牺牲层的至少部分以限定在多个开口中相邻的开口和形成在其中的下电极之间延伸的下电极的支撑结构，支撑结构包括第一至第n支撑层和间隙 在第一至第n个支撑层中相邻的第一至第n个牺牲层已被去除之间的区域。 在下电极上形成介电层，在电介质层上形成上电极。

    Flat Terminal for Guideway Transit System
    19.
    发明申请
    Flat Terminal for Guideway Transit System 审中-公开
    轨道交通系统平台

    公开(公告)号：US20080098923A1

    公开(公告)日：2008-05-01

    申请号：US11662665

    申请日：2005-10-07

    申请人： Tae-Jin Park

    发明人： Tae-Jin Park

    IPC分类号： B61B1/00

    CPC分类号： B61B1/00 ,  E04H6/10

    摘要： A flat terminal for a guideway transit system is provided. The flat terminal comprises a gateway 24 connected to a guideway 20 through which a vehicle 10 moves, and through which the vehicle is driven in and out to enter/alight passengers, entering/alighting platforms 30 at which the vehicle stops at the gateway 24 to enter/alight the passengers or freights, and a waiting room 42 provided on the same plane as the entering/alighting platforms 30. Therefore, it is possible to install a single story structure terminal, rather than a two-story structure terminal, and install the gateway or the entering/alighting platforms at the exterior of the building since a movement of the vehicle does not overlap a passageway of the passengers.

    摘要翻译： 提供了一种用于导轨传送系统的平板端子。 平面终端包括连接到车辆10移动的导轨20的通道24，车辆被驱动进出的乘客进入/下车，进入/下车平台30，车辆停在网关24处 进入/下车的乘客或货物，以及与进入/下车平台30在同一平面上提供的候车室42.因此，可以安装单层结构终端而不是两层结构的终端，并安装 由于车辆的移动，建筑物外部的通道或入口/下车平台不与乘客的通道重叠。