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    Communication system, cycle master node and communication method
    11.
    发明授权
    Communication system, cycle master node and communication method 失效
    通信系统，周期主节点和通信方式

    公开(公告)号：US07826492B2

    公开(公告)日：2010-11-02

    申请号：US11440399

    申请日：2006-05-25

    Applicant: Junichi Takeuchi

    Inventor： Junichi Takeuchi

    IPC: H04J3/06 ,  H04L12/28 ,  G06F3/00 ,  G06F13/20

    CPC classification number: G06F13/387 ,  H04L12/40058

    Abstract: A communication system carrying out an isochronous transfer, includes a cycle master node and nodes connected with each other through a system bus. The cycle master node sets a cycle time of the isochronous transfer and transfers a cycle start packet onto the system bus for every the cycle time. Each of the nodes transfers an isochronous packet onto the system bus in response to the cycle start packet.

    Abstract translation: 执行同步传送的通信系统包括循环主节点和通过系统总线彼此连接的节点。 循环主节点设置同步传输的周期时间，并将循环开始分组在每个周期时间内传送到系统总线上。 每个节点响应于循环开始分组将同步分组传送到系统总线上。

    HYDROGENATION CATALYST FOR CARBONYL GROUP, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING UNSATURATED ALCOHOL BY USING SUCH CATALYST
    12.
    发明申请
    HYDROGENATION CATALYST FOR CARBONYL GROUP, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING UNSATURATED ALCOHOL BY USING SUCH CATALYST 审中-公开
    碳氢化合物的加氢催化剂，其生产方法和使用这种催化剂生产不饱和醇的方法

    公开(公告)号：US20090299105A1

    公开(公告)日：2009-12-03

    申请号：US12066062

    申请日：2006-09-05

    Applicant: Yasunobu Inoue ,  Hiroshi Nishiyama ,  Nobuo Saito ,  Junichi Takeuchi

    Inventor： Yasunobu Inoue ,  Hiroshi Nishiyama ,  Nobuo Saito ,  Junichi Takeuchi

    IPC: C07C29/136 ,  B01J23/56 ,  B01J27/18

    CPC classification number: C07C29/141 ,  B01J23/62 ,  B01J27/1856 ,  B01J37/0201 ,  B01J37/036 ,  B01J37/16 ,  C07C31/125 ,  C07C33/02 ,  C07C33/025

    Abstract: Provided are a hydrogenation catalyst for carbonyl groups which can produce an unsaturated alcohol by hydrogenating an unsaturated carbonyl compound with high selectivity by a simple process at low cost, a method of efficiently producing the hydrogenation catalyst, and a practical method of producing an unsaturated alcohol by using the hydrogenation catalyst. In the present invention, the hydrogenation catalyst is obtained by carrying a noble metal such as ruthenium as a catalyst component onto a carrier which is composed of an oxygen-containing gallium compound. Gallium oxyhydroxide, gallium oxide, gallium phosphate or the like can be used as the gallium compound, and a hydrogenation catalyst including the gallium compound carrier carrying 0.1 to 10% by weight of ruthenium is used suitably.

    Abstract translation: 提供了一种用于羰基的加氢催化剂，其可以通过以低成本的简单方法以高选择性氢化不饱和羰基化合物来生产不饱和醇，有效生产氢化催化剂的方法和通过以下方法制备不饱和醇的实际方法： 使用氢化催化剂。 在本发明中，通过将诸如钌的贵金属作为催化剂组分携带在由含氧镓化合物构成的载体上而获得。 可以使用氢氧化镓，氧化镓，磷酸镓等作为镓化合物，适当地使用含有载体​​重量为0.1〜10％的镓化合物载体的氢化催化剂。

    Interfacing device and communication control method
    15.
    发明申请
    Interfacing device and communication control method 审中-公开
    接口设备和通信控制方法

    公开(公告)号：US20060282750A1

    公开(公告)日：2006-12-14

    申请号：US11440070

    申请日：2006-05-25

    Applicant: Junichi Takeuchi

    Inventor： Junichi Takeuchi

    IPC: H03M13/00

    CPC classification number: H04L43/022

    Abstract: Disclosed is a system including a plurality of node devices connected to a network, in which in the node device, each transmit a packet for transferring noise information so that any of the node devices on the network is able to grasp the noise information. The signal level of a received signal from a transmission line is monitored by a monitor circuit and analyzed by a sampling analysis unit. Based on the result of analysis, a packet for transferring noise information is generated by a noise information transfer packet generator and controlling unit and the generated packet is sent out from an output circuit to a transmission line. On receipt of the packet for transferring noise information, sent over the transmission line, the controlling unit extracts the noise information from the packet to supply the extracted noise information to a correction command circuit.

    Abstract translation: 公开了一种包括连接到网络的多个节点设备的系统，其中在节点设备中，每个发送用于传送噪声信息的分组，使得网络中的任何节点设备能够掌握噪声信息。 来自传输线的接收信号的信号电平由监视电路监视并由采样分析单元进行分析。 基于分析结果，由噪声信息传送分组发生器和控制单元生成用于传送噪声信息的分组，并将生成的分组从输出电路发送到传输线。 在接收到通过传输线发送的用于传送噪声信息的分组时，控制单元从分组中提取噪声信息，以将提取的噪声信息提供给校正命令电路。

    Electronic device and its power control method
    16.
    发明授权
    Electronic device and its power control method 失效

    公开(公告)号：US07036031B2

    公开(公告)日：2006-04-25

    申请号：US09970529

    申请日：2001-10-04

    Applicant: Junichi Takeuchi

    Inventor： Junichi Takeuchi

    IPC: G06F1/26 ,  G06F1/32 ,  H04B1/38 ,  H04B1/40

    CPC classification number: G06F1/3209 ,  G06F1/3203 ,  G06F1/3253 ,  Y02D10/151

    Abstract: To provide an interface device and method of controlling power to achieve reduction in power consumption by presetting the transceiver in the standby state. When the physical layer (PHY) 10 makes a transition to a low power consumption mode, a standby signal (standby) for instructing the optical transceiver 30 to preset it into the low power consumption mode is brought into active and is output thereto. When the optical transceiver receives said standby signal, it is brought into the standby mode which is the low power consumption mode.

    Variable drive current driver circuit
    17.
    发明授权
    Variable drive current driver circuit 失效

    公开(公告)号：US07030665B2

    公开(公告)日：2006-04-18

    申请号：US10647582

    申请日：2003-08-25

    Applicant: Junichi Takeuchi

    Inventor： Junichi Takeuchi

    IPC: H03B1/00

    CPC classification number: H04L25/028 ,  H03K19/018528 ,  H04L25/0272 ,  H04L25/0274 ,  H04L25/0282

    Abstract: Disclosed is a variable drive current driver circuit, comprising: a pair of push-pull circuits for driving a load circuit complementarily; a first current source circuit for having a bias current flow into the pair of push-pull circuits; a second current source circuit for having the bias current flow out of the pair of push-pull circuits; and a control circuit for varying both the bias current flowed by the first current source circuit and the bias current flowed by the second current source circuit according to a control signal.

    Semiconductor device and method of fabricating the same
    18.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US06614119B1

    公开(公告)日：2003-09-02

    申请号：US09521771

    申请日：2000-03-09

    Applicant: Michio Asahina ,  Junichi Takeuchi ,  Naohiro Moriya ,  Kazuki Matsumoto

    Inventor： Michio Asahina ,  Junichi Takeuchi ,  Naohiro Moriya ,  Kazuki Matsumoto

    IPC: H01L2940

    CPC classification number: H01L21/76814 ,  H01L21/28518 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

    Abstract: A semiconductor device having a contact structure that can exhibit superlative step coverage without causing voids or wiring discontinuities, using aluminum or aluminum alloys as a conductive substance for via-holes. A method of fabricating the semiconductor device comprises, for at least one layer of wiring regions above the first wiring region on a semiconductor substrate, the following steps (a) to (f): (a) a step of forming a via-hole in a second interlayer dielectric formed above the first wiring region on a semiconductor substrate; (b) a degassing step for removing gaseous components included within the interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300° C. to 550° C.; (c) a step of forming a wetting layer on the surface of the interlayer dielectric and the via-hole; (d) a step of cooling the substrate to a temperature of no more than 100° C.; (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the wetting layer at a temperature of no more than 200° C.; and (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the first aluminum layer at a temperature of at least 300° C.

    Abstract translation: 一种具有接触结构的半导体器件，其可以显示出最高级的覆盖范围，而不引起空隙或接线不连续性，使用铝或铝合金作为通孔的导电物质。 制造半导体器件的方法包括：对于在半导体衬底上的第一布线区域上方的布线区域中的至少一层的以下步骤（a）至（f）：（a）形成通孔的步骤 形成在半导体衬底上的第一布线区域上方的第二层间电介质; （b）通过减压热处理和基板温度在300℃至550℃下除去层间电介质中包含的气体组分的脱气步骤; （c）在层间电介质和通孔的表面上形成润湿层的步骤; （d）将基板冷却至不超过100℃的温度; （e）在不超过200℃的温度下形成包含铝和合金中的铝的第一铝层的步骤，其中铝是润湿层上的主要成分; 以及（f）在至少300℃的温度下形成第一铝层的步骤，所述第二铝层包括铝和合金之一，其中铝是第一铝层上的主要成分。

    Semiconductor device and method of fabricating the same
    19.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US6144097A

    公开(公告)日：2000-11-07

    申请号：US220590

    申请日：1998-12-28

    Applicant: Michio Asahina ,  Junichi Takeuchi ,  Naohiro Moriya ,  Kazuki Matsumoto

    Inventor： Michio Asahina ,  Junichi Takeuchi ,  Naohiro Moriya ,  Kazuki Matsumoto

    IPC: H01L21/28 ,  H01L21/316 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC classification number: H01L21/76846 ,  H01L21/76843 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S438/927

    Abstract: A semiconductor device comprising a semiconductor substrate including an electronic element, interlayer dielectric (silicon oxide layer and BPSG layer) formed on the semiconductor substrate, a contact hole formed in the interlayer dielectric, a barrier layer formed on the interlayer dielectric and contact hole, and a wiring layer formed on the barrier layer. In the barrier layer, metal oxide (titanium oxide) are scattered in an island-like configuration. The barrier layer is formed by depositing a layer that is used to form the barrier layer and then introducing oxygen into the layer. The step is achieved by depositing a layer for the barrier layer, exposing the layer in oxygen plasma under reduced pressure, and subjecting the layer to the thermal processing, or, alternatively by depositing a layer for the barrier layer and subjecting the layer to thermal processing in an atmosphere of oxygen. The semiconductor device of the present invention has a barrier layer with excellent barrier properties.

    Abstract translation: 一种半导体器件，包括形成在半导体衬底上的电子元件，层间电介质（氧化硅层和BPSG层）的半导体衬底，形成在层间电介质中的接触孔，形成在层间电介质和接触孔上的阻挡层，以及 形成在阻挡层上的布线层。 在阻挡层中，金属氧化物（氧化钛）以岛状构造分散。 阻挡层通过沉积用于形成阻挡层然后将氧引入层中的层而形成。 该步骤通过沉积阻挡层的层，在减压下在氧等离子体中暴露层，并对该层进行热处理，或者通过沉积用于阻挡层的层并使该层进行热处理来实现 在氧气氛中。 本发明的半导体装置具有阻隔性优异的阻挡层。

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