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    Transparent electrode
    11.
    发明授权
    Transparent electrode 有权
    透明电极

    公开(公告)号：US07948003B2

    公开(公告)日：2011-05-24

    申请号：US12177090

    申请日：2008-07-21

    申请人： Ken Nakahara

    发明人： Ken Nakahara

    IPC分类号： H01L33/42

    CPC分类号： H01L33/42

    摘要： In order to emit a light from an electrode side, in semiconductor light emitting devices such as LED and the like, and liquid crystal, the electrode is formed of a transparent material so as to transmit a light through the transparent electrode and exit the light. A ZnO, which constitutes a material for the transparent electrode, is subject to erosion by acid and alkali, thus, as the case may cause loss of a reliability of the electrode under the influence of ion-containing moisture. In order to solve such a problem, this invention has as its aim a transparent electrode film provided with stability capable of preventing any degradation under the influence of any ion-containing moisture, while being kept acid-proof and alkali-proof. In order to accomplish the above-mentioned aim, this invention provides a transparent electrode made up of a ZnO as its main material, wherein its surface is covered with a Mg-doped ZnO film.

    摘要翻译： 为了从电极侧发出光，在诸如LED等的半导体发光器件和液晶中，电极由透明材料形成，以便透过透明电极发出光并离开光。 构成透明电极的材料的ZnO被酸碱侵蚀，因此在离子含水分的影响的情况下可能导致电极的可靠性降低。 为了解决这个问题，本发明的目的是提供具有稳定性的透明电极膜，其能够在保持耐酸碱性的同时防止在任何含离子的水分的影响下的任何劣化。 为了实现上述目的，本发明提供一种由ZnO作为其主要材料的透明电极，其表面被掺杂了Mg的ZnO膜覆盖。

    ZnO-BASED THIN FILM
    12.
    发明申请
    ZnO-BASED THIN FILM 审中-公开
    基于ZnO的薄膜

    公开(公告)号：US20100323160A1

    公开(公告)日：2010-12-23

    申请号：US12526113

    申请日：2008-02-06

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： B32B33/00 ,  C30B29/16 ,  B32B9/00

    CPC分类号： H01L21/02554 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/24612

    摘要： Provided is a ZnO-based thin film for growing a flat film when the ZnO-based thin film is formed on a substrate. In FIG. 1(a), a ZnO-based film 2 is formed on a ZnO-based substrate 1. Meanwhile, in FIG. 1(b), a ZnO-based laminated body 10 that is a laminated body of ZnO-based thin films is formed on the ZnO-based substrate 1. The ZnO-based laminated body 10 is the laminated body in which multiple ZnO-based thin films including a ZnO-based thin film 3, a ZnO-based thin film 4 and the like are laminated. When forming the ZnO-based thin film 2 or the ZnO-based laminated body 10, the film or the body is formed at a growth temperature of 750° C. or above, or alternatively, a step structure on a surface of the film is formed into a predetermined structure such that roughness on the surface of the film is in a predetermined range.

    摘要翻译： 提供了当在基板上形成ZnO基薄膜时用于生长平坦膜的ZnO基薄膜。 在图 如图1（a）所示，在ZnO系基板1上形成ZnO系膜2。 如图1（b）所示，在ZnO系基板1上形成作为ZnO系薄膜的层叠体的ZnO系叠层体10. ZnO系叠层体10为多层ZnO系 层叠包含ZnO系薄膜3，ZnO系薄膜4等的薄膜。 当形成ZnO基薄膜2或ZnO基层叠体10时，在750℃以上的生长温度下形成薄膜或者本体，或者也可以在薄膜的表面上形成台阶结构 形成为预定结构，使得薄膜表面上的粗糙度处于预定范围内。

    ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE
    13.
    发明申请
    ZnO-BASED SUBSTRATE, METHOD FOR PROCESSING ZnO-BASED SUBSTRATE, AND ZnO-BASED SEMICONDUCTOR DEVICE 审中-公开
    基于ZnO的衬底，用于处理基于ZnO的衬底的方法和基于ZnO的半导体器件

    公开(公告)号：US20100308327A1

    公开(公告)日：2010-12-09

    申请号：US12865550

    申请日：2009-01-30

    申请人： Ken Nakahara ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： H01L29/22 ,  H01L21/36

    CPC分类号： C30B29/16 ,  C30B33/12

    摘要： Provided are a ZnO-based substrate having a high-quality surface suitable for crystal growth, a method for processing the ZnO-based substrate, and a ZnO-based semiconductor device. The ZnO-based substrate is formed such that any one of a carboxyl group and a carbonate group is substantially absent in a principal surface on a crystal growth side. Also, in order for a carboxyl group or a carbonate group to be substantially absent, any one of oxygen radicals, oxygen plasma and ozone is brought into contact with the surface of the ZnO-based substrate before the crystal growth is started. Consequently, cleanness of the surface of the ZnO substrate is enhanced, thereby enabling fabrication of a high-quality ZnO-based thin film on the substrate.

    摘要翻译： 提供具有适合于晶体生长的高质量表面的ZnO基衬底，用于处理ZnO基衬底的方法和ZnO类半导体器件。 形成ZnO基基板，使得在晶体生长侧的主表面上基本上不存在羧基和碳酸酯基中的任何一个。 此外，为了基本上不存在羧基或碳酸酯基，在晶体生长开始之前，使氧自由基，氧等离子体和臭氧中的任一种与ZnO基基板的表面接触。 因此，提高了ZnO基板表面的清洁度，从而能够在基板上制造高质量的ZnO基薄膜。

    ZnO-BASED SEMICONDUCTOR ELEMENT
    15.
    发明申请
    ZnO-BASED SEMICONDUCTOR ELEMENT 审中-公开
    基于ZnO的半导体元件

    公开(公告)号：US20100270533A1

    公开(公告)日：2010-10-28

    申请号：US12733440

    申请日：2008-09-05

    申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

    IPC分类号： H01L29/15 ,  H01L29/22

    CPC分类号： H01L33/16 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02609 ,  H01L33/0083 ,  H01L33/28

    摘要： Provided is a ZnO-based semiconductor device capable of achieving easier conversion into p-type by alleviating the self-compensation effect and by preventing donor impurities from mixing in. The ZnO-based semiconductor device includes a MgxZn1-xO substrate (0≦x≦1) having such a principal surface that: a projection axis obtained by projecting a normal line to the principal surface onto a plane formed by an a-axis and a c-axis of substrate crystal axes is inclined towards the a-axis by an angle of φa degrees; a projection axis obtained by projecting the normal line to the principal surface onto a plane formed by an m-axis and the c-axis of the substrate crystal axes is inclined towards the m-axis by an angle of Φm degrees; the angle Φa satisfies 70≦{90−(180/π)arctan(tan(πΦa/180)/tan(πΦm/180))≦110; and the angle Φm≧1. Accordingly, a ZnO-based semiconductor layer formed on the principal surface can be easily converted into p-type because the donor impurities are prevented from mixing in and the self-compensation effect is alleviated. Thus, the desired ZnO-based semiconductor device can be fabricated.

    摘要翻译： 提供了一种通过减轻自补偿效应并防止供体杂质混入，可以实现更容易地转换成p型的ZnO基半导体器件。ZnO基半导体器件包括Mg x Zn 1-x O衬底（0＆amp; nlE; x＆ 1）具有这样的主表面：使通过将主线垂直于基体晶轴的a轴和c轴所形成的平面投影到由a轴和c轴构成的平面而获得的投影轴向a轴倾斜一定角度 一度; 通过将由主体的法线投影到由m轴形成的平面和基板晶体轴的c轴而获得的投影轴朝向m轴倾斜Φm度的角度; 角度Φa满足70＆nlE; {90-（180 /＆pgr;）arctan（tan（＆pgr;Φa/ 180）/ tan（＆pgr;Φm/ 180））＆ 角度Φm≥1。 因此，由于防止供体杂质混入，因此能够容易地将形成在主面上的ZnO系半导体层变为p型，从而可以缓和自补偿效果。 因此，可以制造所需的ZnO基半导体器件。

    Nitride Semiconductor Light Emitting Element
    16.
    发明申请
    Nitride Semiconductor Light Emitting Element 有权
    氮化物半导体发光元件

    公开(公告)号：US20100224892A1

    公开(公告)日：2010-09-09

    申请号：US12223172

    申请日：2007-01-23

    申请人： Ken Nakahara

    发明人： Ken Nakahara

    IPC分类号： H01L33/46

    CPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44

    摘要： Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light irrespective of the reflectance of a metal used for an electrode. An n side anti-reflection layer 2 and a p side Bragg reflection layer 4 are formed so as to sandwich an MQW active layer 3 that serves as a light emitting region, and the nitride semiconductor light emitting element has a double hetero structure. On top of the n side anti-reflection layer 2, an n electrode 1 is formed. Meanwhile, at the lower side of the p side Bragg reflection layer 4, a p electrode 5, a reflection film 7, and a pad electrode 8 are formed, and the pad electrode is bonded to a support substrate 10 with a conductive bonding layer 9 interposed in between. Both the n side anti-reflection layer 2 and the p side Bragg reflection layer 4 also serve as contact layers. The n side anti-reflection layer 2 is disposed on the light-extracting-direction side while the p side Bragg reflection layer 4 is disposed on the opposite side to the light-extracting-direction side. Consequently, the light extraction efficiency is improved.

    摘要翻译： 提供了与用于电极的金属的反射率无关的具有提高的光提取效率和出射光的宽的照射角的氮化物半导体发光元件。 形成n侧防反射层2和p侧布拉格反射层4，以夹持用作发光区域的MQW有源层3，并且氮化物半导体发光元件具有双异质结构。 在n侧防反射层2的顶部，形成n电极1。 同时，在p侧布拉格反射层4的下侧形成有p电极5，反射膜7和焊盘电极8，并且将焊盘电极与导电接合层9插入的支撑基板10接合 之间。 n侧防反射层2和p侧布拉格反射层4也用作接触层。 n侧防反射层2设置在取光方向侧，而p侧布拉格反射层4设置在与光提取方向相反的一侧。 因此，光提取效率提高。

    Method for manufacturing nitride semiconductor device
    17.
    发明授权
    Method for manufacturing nitride semiconductor device 有权
    氮化物半导体器件的制造方法

    公开(公告)号：US07718450B2

    公开(公告)日：2010-05-18

    申请号：US11920043

    申请日：2006-05-08

    申请人： Ken Nakahara

    发明人： Ken Nakahara

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0095 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/268 ,  H01L29/66462 ,  H01L33/305

    摘要： There is provided a method for manufacturing a nitride semiconductor device which has a p-type nitride semiconductor layer having a high carrier concentration (low resistance) by activating an acceptor without raising a problem of forming nitrogen vacancies which are generated when a high temperature annealing is carried out over an extended time. A semiconductor lamination portion (6) made of nitride semiconductor is formed on a substrate (1) so as to form a light emitting layer, and irradiated by a laser beam having a wavelength λ of λ=h·c/E or less (E is energy capable of separating off the bonding between Mg and H) from the front surface side of the semiconductor lamination portion. Then, a heat treatment is carried out at a temperature of 300 to 400° C. And, similarly to a process for normal nitride semiconductor LED, a light transmitting conductive layer (7) is provided, an n-side electrode (9) is formed on an n-type layer (3) exposed by removing a part of the semiconductor lamination portion by etching, and a p-side electrode (8) is formed on a surface of the light transmitting conductive layer, thereby a LED is obtained.

    摘要翻译： 提供了一种通过激活受主而具有具有高载流子浓度（低电阻）的p型氮化物半导体层的氮化物半导体器件的制造方法，而不会产生当高温退火时产生的形成氮空位的问题 进行了漫长的时间。 在基板（1）上形成由氮化物半导体构成的半导体层叠部（6），形成发光层，用波长λ为λ= h·c / E以下的激光（E 是能够分离Mg和H）之间的结合的能量与半导体层叠部分的前表面侧。 然后，在300〜400℃的温度下进行热处理。与普通氮化物半导体LED的工序相同，设置透光导电层（7），n侧电极（9）为 形成在通过蚀刻去除一部分半导体层叠部分而露出的n型层（3）上，并且在透光导电层的表面上形成p侧电极（8），由此获得LED。

    Zinc Oxide Based Compound Semiconductor Light Emitting Device
    18.
    发明申请
    Zinc Oxide Based Compound Semiconductor Light Emitting Device 有权
    基于氧化锌的复合半导体发光器件

    公开(公告)号：US20090078934A1

    公开(公告)日：2009-03-26

    申请号：US11886918

    申请日：2006-03-23

    申请人： Ken Nakahara

    发明人： Ken Nakahara

    IPC分类号： H01L33/00

    CPC分类号： H01S5/327 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/02631 ,  H01L33/16 ,  H01L33/28 ,  H01S5/0422 ,  H01S5/2224 ,  H01S5/2231

    摘要： There is provided a semiconductor light emitting device in which light emitting efficiency is totally improved in case of emitting a light having a short wavelength of 400 nm or less by raising internal quantum efficiency by enhancing crystallinity of semiconductor layers laminated and by raising external quantum efficiency by taking out the light emitted by preventing the light emitted from being absorbed in the substrate or the like, as much as possible. In case of laminating ZnO compound semiconductor layers (2 to 6) so as to form a light emitting layer forming portion (7) for emitting the light having a wavelength of 400 nm or less on a substrate (1), a substrate composed of MgxZn1-xO (0≦x≦0.5) is used as the substrate (1).

    摘要翻译： 提供了一种半导体发光器件，其中通过提高层叠的半导体层的结晶度并通过提高外部量子效率来提高内部量子效率，并且通过提高外部量子效率来发射具有400nm或更小的短波长的光的发光效率得到全面改善 通过防止发射的光被吸收在基板等中而发出的光被尽可能多地取出。 在层叠ZnO化合物半导体层（2〜6）以在基板（1）上形成发光波长为400nm以下的光的发光层形成部（7）的情况下，将由Mg x Zn 1 -xO（0 <= x <= 0.5）用作衬底（1）。

    Semiconductor Light Emitting Device
    19.
    发明申请
    Semiconductor Light Emitting Device 有权
    半导体发光装置

    公开(公告)号：US20080073659A1

    公开(公告)日：2008-03-27

    申请号：US11662097

    申请日：2005-09-07

    申请人： Kentaro Tamura ,  Ken Nakahara

    发明人： Kentaro Tamura ,  Ken Nakahara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405

    摘要： A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device (11) includes a light emitting layer (16) made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer (17) and a p-type GaN-based semiconductor layer (15), and a ZnO-based or an ITO transparent electrode layer (14). Further, a value of an equation represented by 3t/(A/π)1/2−3(t/(A/π)1/2)2+(t/(A/π)1/2)3 is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device (11) is represented by A. The light emitting efficiency is improved using the transparent electrode layer (14) having an optimum thickness to the light emitting area.

    摘要翻译： 提供了一种提高了LED的发光效率的半导体发光器件。 半导体发光器件（11）包括由夹在n型GaN基半导体层（17）和p型GaN基半导体层（15）之间的GaN基半导体制成的发光层（16） ，以及ZnO系或ITO透明电极层（14）。 此外，由3t /（A / pi）×1 / 3-3（t /（A / pi）1/2）表示的等式的值 2 +（t /（A / pi）1/2）3 3以上，透明电极层的厚度为t 并且发光器件（11）的发光层（发光区域）的面积由A表示。使用对于发光区域具有最佳厚度的透明电极层（14）来提高发光效率。