公开(公告)号：US5769942A

公开(公告)日：1998-06-23

申请号：US506039

申请日：1995-07-24

Applicant: Kazuo Maeda

Inventor： Kazuo Maeda

IPC: C30B25/10 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/02 ,  C30B25/14 ,  C30B25/22 ,  H01L21/205 ,  C30B23/00

CPC classification number: C30B25/22 ,  C30B29/06

Abstract: This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.

Abstract translation: 本发明涉及通过使用所谓的非均相反应进行外延生长的方法，包括将源材料设置在水平室的第一区域中，将生长衬底放置在其第二区域中，加热第一区域从而保持 在第一温度下加热第二区域，从而将生长衬底保持在低于第一温度的第二温度，将反应气体引入室中，从而使反应气体与源材料反应并沉积所得反应 产物在生长衬底上，从而通过外延生长获得膜的形成。

公开(公告)号：US5679165A

公开(公告)日：1997-10-21

申请号：US531908

申请日：1995-09-18

Applicant: Kazuo Maeda ,  Kouichi Ohira ,  Hiroshi Chino

Inventor： Kazuo Maeda ,  Kouichi Ohira ,  Hiroshi Chino

IPC: H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  C23C16/54 ,  H01L21/00 ,  H01L21/683 ,  H01L21/687 ,  C23C16/00 ,  C23F1/02

CPC classification number: H01L21/67167 ,  C23C16/4407 ,  C23C16/4412 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/54 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: An apparatus, for forming a film according to an automated continuous CVD (Chemical Vapor Deposition) method includes a wafer holder having a plurality of separate, detachable susceptors, a rotary shaft for rotating the wafer holder to rotate wafer mounting surfaces of the susceptors in one plane, a gas distributor spaced from the wafer holder and facing the moving surface of the wafer mounting surface to discharge a reaction gas onto the wafer mounting surfaces, and a heating instrument spaced from the wafer holder and facing the moving surface of the opposite side of the wafer mounting surfaces, in order to keep the wafer at a stable temperature during forming a film and to allow maintenance and repair to be easily and efficiently performed.

Abstract translation: 用于根据自动连续CVD（化学气相沉积）方法形成膜的装置包括具有多个分离的可拆卸基座的晶片保持器，用于旋转晶片保持器以使基座的晶片安装表面旋转的旋转轴 平面，与晶片保持器间隔开并面向晶片安装表面的移动表面的气体分配器，以将反应气体排放到晶片安装表面上;以及加热仪器，与晶片保持器间隔开并面对与晶片安装表面相对的移动表面 晶片安装表面，以便在形成膜期间将晶片保持在稳定的温度，并且允许容易且有效地进行维护和修理。

公开(公告)号：US5620523A

公开(公告)日：1997-04-15

申请号：US389791

申请日：1995-02-16

Applicant: Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

Inventor： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC: H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32449 ,  H01J37/3211 ,  H01J37/3244

Abstract: This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

Abstract translation: 本发明涉及用于形成绝缘膜的成膜装置，例如通过使用活性反应气体的CVD法。 旨在简化设备，确保高质量的膜，提高等离子体的形成效率，并提高所制膜的厚度均匀性。 成膜装置包括等离子体发生器和用于将第一反应气体排放到等离子体发生器中的第一气体放出器和用于将第二反应气体排放到基板上的第二气体放出器。 第二气体排出器包括多个气体排出管，其中形成有多个气体排出孔，由此第二反应气体从气体排出孔排出到与活化的第一反应气体接触，并且自身被激活 通过第一和第二反应气体的反应在基板上形成膜。

公开(公告)号：US5330577A

公开(公告)日：1994-07-19

申请号：US934759

申请日：1992-10-27

Applicant: Kazuo Maeda ,  Kouichi Ohira ,  Mitsuo Hirose

Inventor： Kazuo Maeda ,  Kouichi Ohira ,  Mitsuo Hirose

IPC: H01L21/205 ,  C23C16/44 ,  H01L21/00 ,  C23C16/00

CPC classification number: H01L21/67017 ,  C23C16/4407 ,  Y10S148/017

Abstract: A semiconductor fabrication apparatus for forming a film on a wafer by a CVD method provides for easy removal of the dust generated in a film-forming chamber without reducing the uptime/downtime ratio of the equipment. The apparatus includes one or more gas dispersing devices having gas releasing surfaces for releasing a reaction gas to form a film on a wafer; one or more wafer holders having wafer mounting surfaces opposed to the plane defined by the gas releasing surface; and one or more cleaners, each having a suction port and a brush connected to the suction port, provided opposing the gas releasing surface. Either the cleaner or the gas dispersing device is moved so that the brush contacts and traverses the gas releasing surface.

Abstract translation: PCT No.PCT / JP92 / 00136 Sec。 371日期：1992年10月27日 102（e）日期1992年10月27日PCT提交1992年2月12日PCT公布。 出版物WO92 / 日期：1992年9月3日。通过CVD方法在晶片上形成膜的半导体制造装置提供了容易地去除成膜室中产生的灰尘，而不会降低设备的正常运行时间/停机时间。 该装置包括一个或多个具有用于释放反应气体以在晶片上形成膜的气体释放表面的气体分散装置; 一个或多个晶片保持器具有与由气体释放表面限定的平面相对的晶片安装表面; 以及一个或多个清洁器，每个清洁器具有与气体释放表面相对设置的吸入口和连接到吸入口的刷子。 清洁器或气体分散装置移动，使得刷接触并横穿气体释放表面。

公开(公告)号：US4471946A

公开(公告)日：1984-09-18

申请号：US473407

申请日：1983-03-09

Applicant: Kazuo Maeda

Inventor： Kazuo Maeda

IPC: B66D3/14 ,  B66D1/14 ,  B66D5/32

CPC classification number: B66D3/14

Abstract: An idling device is able to bring into an idling condition a lever hoist including a change gear provided on driving member threadedly engaged on a driving shaft for driving a sheave for winding-up a chain or rope for a load, an operating lever rockably driven by a hand, winding-up and winding-off driving pawls engageable with teeth of the change gear and changeable in response to the purpose of hoisting or lowering the load, and a braking assembly for preventing the change gear from being driven by a gravity of the load and adapted to be clamped and released by rotative movement of the driving member relative to said driving shaft. According to the invention the idling device comprises a stopper fixed to the driving shaft and a manually operatable knob fitted on and rotatably and axially slidably relative to the driving shaft between the stopper and the driving member and provided with engagement protrusions adapted to be engaged in recesses formed in the driving member. The knob is formed with stopper protrusions integrally on a bottom of its cavity for receiving the stopper. The stopper is formed with recesses for receiving the stopper protrusions in the idling condition and is further formed with engagement surfaces in opposition to the stopper protrusions of the knob for preventing excess release of the braking assembly.

Abstract translation: 怠速装置能够进入怠速状态，包括设置在驱动构件上的变速齿轮，该变速齿轮螺纹地接合在驱动轴上，用于驱动用于卷绕用于负载的链条或绳索的滑轮，操作杆，其可摇动地由 可以与变速齿轮的齿啮合并且能够响应于提升或降低负载的目的而变化的手，上弦和释放驱动爪，以及用于防止变速齿轮被重力驱动的制动组件 并且适于通过驱动构件相对于所述驱动轴的旋转运动而被夹紧和释放。 根据本发明，怠速装置包括固定到驱动轴上的止动件和一个可手动操作的手柄，其可旋转地并且相对于驱动轴可滑动地轴向地滑动在止动器和驱动构件之间并且设置有接合突起， 形成在驱动构件中。 旋钮在其腔的底部上一体形成有止动突起，用于接收止动件。 止动器形成有用于在怠速状态下接收止动器突起的凹部，并且还形成有与止动突起相对的接合表面，用于防止制动组件的过度释放。

公开(公告)号：US4109663A

公开(公告)日：1978-08-29

申请号：US620351

申请日：1975-10-07

Applicant: Kazuo Maeda ,  Katuichi Noguchi ,  Masuo Kawabata ,  Shigehiko Sato ,  Yukio Sato

Inventor： Kazuo Maeda ,  Katuichi Noguchi ,  Masuo Kawabata ,  Shigehiko Sato ,  Yukio Sato

IPC: A24B15/14 ,  A24B15/16 ,  A24D1/18 ,  A24B3/14

CPC classification number: A24B15/16 ,  A24B15/14

Abstract: A smoking tobacco product, which is produced by incorporating in smoking material a thermo-gelable .beta.-1,3-glucan-type polysaccharide, either as the sole smoking material or as its partial replacement, has improved smoking characteristics such as flavor, taste and irritability, and its smoking material has improved physical properties such as thickness, wet-proof qualities, tensile strength, elongation and filling capacity.

Abstract translation: 通过在吸烟材料中掺入作为唯一吸烟材料或作为其部分替代物的热胶凝β-1,3-葡聚糖型多糖产生的烟草制品具有改善的吸烟特征，例如风味，味道和 易燃性及其吸烟材料具有改善的物理性能如厚度，防湿性，拉伸强度，伸长率和填充能力。

公开(公告)号：US09732975B2

公开(公告)日：2017-08-15

申请号：US13574951

申请日：2010-02-17

Applicant: Kazuo Maeda ,  Toshihiro Ishikawa

Inventor： Kazuo Maeda ,  Toshihiro Ishikawa

IPC: F25B9/00 ,  F24F11/00

CPC classification number: F24F11/62 ,  F24F11/30 ,  F24F11/46 ,  F24F11/54 ,  F24F11/64 ,  F24F11/67 ,  F24F2221/54

Abstract: There is provided an air-conditioning system in which at least one or some of a plurality of air-conditioning apparatuses are each controllable such that the indoor temperature is maintained between two set temperatures. All the plurality of air-conditioning apparatuses are switched to either one of heating operation and cooling operation on the basis of a temperature difference between the indoor temperature related to an air-conditioning apparatus that is in the first operation mode and a set target temperature and a temperature difference between the indoor temperature related to an air-conditioning apparatuses that is in the second operation mode and an upper temperature limit or a lower temperature limit.

公开(公告)号：US20090245946A1

公开(公告)日：2009-10-01

申请号：US12415552

申请日：2009-03-31

Applicant: Kazuo Maeda

Inventor： Kazuo Maeda

IPC: B26D1/28

CPC classification number: B23C5/10 ,  B23C2210/0421 ,  B23C2210/123 ,  B23C2210/321 ,  B23C2226/125 ,  B23C2240/08 ,  Y10T407/1904 ,  Y10T407/27

Abstract: A cubic boron nitride radius end mill includes a sintered cubic boron nitride compact bonded to an end of a main body, and a cutting edge provided on the sintered cubic boron nitride compact. The wedge angle θt of the cutting edge is constant over the entire region of the cutting edge. A negative rake face is disposed on a face so as to extend over the entire region of the cutting edge, and the rake angle θn of the negative rake face satisfies the relationship −30°≦θn≦−50°. A joint cutting edge is disposed between an end cutting edge and a radius cutting edge in the cutting edge, the joint cutting edge having a concave angle γ0 which is smaller than the concave angle γ1 of the end cutting edge and which satisfies the relationship 0.5°≦γ0 ≦2°.

Abstract translation: 立方氮化硼半径立铣刀包括结合到主体的端部的烧结立方氮化硼压块和设置在立方氮化硼烧结体上的切削刃。 切削刃的楔角在切削刃的整个区域上是恒定的。 负面的前刀面布置在面上，以便在切削刃的整个区域上延伸，并且负前刀面的前倾角满足关系-30°<= t0 <= -50°。 在切削刃的端部切削刃和半径切削刃之间配置有切削刃，该切断刃的凹角γ0小于端部切削刃的凹入角度γ1，并且满足0.5°的关系 <= gamma0 <= 2°。

公开(公告)号：US06900144B2

公开(公告)日：2005-05-31

申请号：US09808016

申请日：2001-03-15

Applicant: Kazuo Maeda ,  Setsu Suzuki ,  Takayoshi Azumi ,  Kiyotaka Sasaki

Inventor： Kazuo Maeda ,  Setsu Suzuki ,  Takayoshi Azumi ,  Kiyotaka Sasaki

IPC: H01L21/20 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  H01L21/302 ,  H01L21/316 ,  H01L21/31

CPC classification number: C23C16/402 ,  C23C16/0227 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02307 ,  H01L21/31612 ,  H01L21/31654

Abstract: A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.

Abstract translation: 成膜表面改性方法包括以下步骤：在膜上形成绝缘膜之前，使含有氨，肼，胺，氨基化合物或其衍生物的气体或水溶液与成膜表面接触 使含有过氧化氢，臭氧，氧，硝酸，硫酸或其衍生物的气体或水溶液与成膜表面接触。

公开(公告)号：US06750137B1

公开(公告)日：2004-06-15

申请号：US09519599

申请日：2000-03-06

Applicant: Kazuo Maeda

Inventor： Kazuo Maeda

IPC: H01L214763

CPC classification number: H01L21/02129 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming an interlayer insulating film includes the steps of forming an underlying insulating film on a substrate; forming a film containing B (boron), C (carbon) and H2O) on the underlying insulating film by plasma enhanced chemical vapor deposition using a source gas containing an Si—C—O—H compound, an oxidative gas and a compound containing B (boron); releasing C (carbon) and H2O in the film from the film by annealing the film, and thereby forming a porous SiO2 film containing B (boron); and subjecting to the porous SiO2 film containing B (boron) to H (hydrogen) plasma treatment, and then forming a cover insulating film.

Abstract translation: 一种用于形成层间绝缘膜的方法包括以下步骤：在衬底上形成下面的绝缘膜; 通过使用含有Si-C-O-H化合物，氧化性气体和含有B（硼）的化合物的源气体的等离子体增强化学气相沉积在底层绝缘膜上形成含有B（硼），C（碳）和H 2 O的膜） 通过退火膜从膜中释放膜中的C（碳）和H 2 O，从而形成含有B（硼）的多孔SiO 2膜; 并对含有B（硼）的多孔SiO 2膜进行H（氢）等离子体处理，然后形成覆盖绝缘膜。