公开(公告)号：US5620523A

公开(公告)日：1997-04-15

申请号：US389791

申请日：1995-02-16

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/3211 ,  H01J37/3244

摘要： This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

摘要翻译： 本发明涉及用于形成绝缘膜的成膜装置，例如通过使用活性反应气体的CVD法。 旨在简化设备，确保高质量的膜，提高等离子体的形成效率，并提高所制膜的厚度均匀性。 成膜装置包括等离子体发生器和用于将第一反应气体排放到等离子体发生器中的第一气体放出器和用于将第二反应气体排放到基板上的第二气体放出器。 第二气体排出器包括多个气体排出管，其中形成有多个气体排出孔，由此第二反应气体从气体排出孔排出到与活化的第一反应气体接触，并且自身被激活 通过第一和第二反应气体的反应在基板上形成膜。

公开(公告)号：US5858100A

公开(公告)日：1999-01-12

申请号：US416006

申请日：1995-04-04

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Yuhko Nishimoto

IPC分类号： C30B25/12 ,  C23C16/458 ,  C23C16/507 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/507

摘要： The present invention relates to a reaction apparatus for receiving a reaction gas and for heating a substrate so as to form a film such as an insulating film on the substrate or for etching, with reduced power consumption for heating the substrate. The apparatus can change a substrate temperature within a short period of time, and maintains throughput while reducing labor and cost for maintenance. The apparatus includes a substrate holder (12) with a base of an insulating material in which an electrode (22) and a heater (23) for heating the held substrate (20) are contained. The apparatus also includes a processing chamber (7) enclosed by a chamber wall (7a).

摘要翻译： 本发明涉及一种反应装置，用于接收反应气体并加热基板，以便在基板上形成诸如绝缘膜的膜或用于蚀刻，同时降低了用于加热基板的功率消耗。 该装置可以在短时间内改变基板温度，并且在减少维护的劳动力和成本的同时保持生产量。 该装置包括具有绝缘材料的基部的基板保持件（12），其中包含用于加热保持的基板（20）的电极（22）和加热器（23）。 该装置还包括由室壁（7a）包围的处理室（7）。

公开(公告)号：US06479408B2

公开(公告)日：2002-11-12

申请号：US09843725

申请日：2001-04-30

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76838

摘要： The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The semiconductor device manufacturing method comprises the steps of preparing a substrate 21 from a surface of which copper wirings 23 are exposed, and forming an interlayer insulating film having a low dielectric constant on the substrate 21, wherein the interlayer insulating film is formed of a multi-layered insulating film including a insulating film 24 that contacts with the copper wirings 23, and the insulating film 24 is formed by plasmanizing a film forming gas containing an alkyl compound having an Si—O—Si bond and one oxygen-containing gas selected from the group consisting of N2O, H2O, and CO2, whose flow rate is equal to or less than a flow rate of the siloxane, to react mutually.

摘要翻译： 本发明涉及通过涂覆铜布线形成具有低介电常数的层间绝缘膜的半导体器件制造方法。 半导体器件制造方法包括从衬底21暴露的表面制备衬底21，并且在衬底21上形成具有低介电常数的层间绝缘膜的步骤，其中层间绝缘膜由多 包括与铜布线23接触的绝缘膜24的绝缘膜，绝缘膜24通过将含有具有Si-O-Si键的烷基化合物和一种含氧气体的成膜气体等离子化而形成，该含氧气体选自 由流动相等于或小于硅氧烷流量的N2O，H2O和CO2组成的组相互反应。

公开(公告)号：US5589001A

公开(公告)日：1996-12-31

申请号：US159127

申请日：1993-11-30

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Hiroshi Chino

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Hiroshi Chino

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/458 ,  H01L21/00 ,  H01L21/304 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/4407 ,  C23C16/4584

摘要： An apparatus for forming a film by the CVD method allows reaction products to be easily removed from a gas discharge surface without decreasing the uptime/downtime ratio, and includes a gas distributor having a gas discharge surface for discharge of a reaction gas for forming a film on a substrate. A wafer holder has a wafer mounting surface facing the gas discharge surface. A cleaner has a suction head and a brush formed at the entrance of the suction head. A rotary shaft supports the cleaner for movement between the gas discharge surface and a stand-by position and brings the brush of the cleaner onto the gas discharge surface. A vertical positioner moves the wafer holder or gas distributor upward or downward, whereby the wafer holder approaches the gas discharge surface for forming a film and is spaced from the gas discharge surface when cleaning the gas discharge surface by movement of the cleaner on the gas discharge surface.

摘要翻译： 通过CVD法形成膜的装置允许反应产物容易地从气体放电表面除去而不减少正常运行时间/停机时间比，并且包括具有用于排出形成膜的反应气体的气体放电表面的气体分配器 在基板上。 晶片保持器具有面向气体排出表面的晶片安装表面。 吸尘器在吸头的入口处形成有吸头和刷子。 旋转轴支撑清洁器，用于在排气表面和待机位置之间移动，并将清洁器的刷子带到排气表面上。 垂直定位器向上或向下移动晶片保持器或气体分配器，由此晶片保持器靠近气体排出表面以形成膜，并且通过清洁器在气体放电上的移动来清洁气体排出表面时与气体排出表面间隔开 表面。

公开(公告)号：US5302209A

公开(公告)日：1994-04-12

申请号：US930709

申请日：1992-10-27

申请人： Kazuo Maeda ,  Kouichi Ohira ,  Mitsuo Hirose

发明人： Kazuo Maeda ,  Kouichi Ohira ,  Mitsuo Hirose

IPC分类号： C23C14/56 ,  C23C16/458 ,  C23C16/54 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31 ,  H01L21/677 ,  H01L21/68 ,  C23C16/00

CPC分类号： H01L21/68764 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67167 ,  H01L21/67778 ,  H01L21/68771

摘要： A continuous type automated apparatus for manufacturing a semiconductor device by forming a film on a wafer by a CVD method. The apparatus moves the wafer while maintaining the wafer at a predetermined temperature, and controls production of individual wafers and formation of multi-layer films of different types. The apparatus includes a wafer holder, a rotary shaft for supporting the wafer holder so that wafer loading surfaces of the wafer holder rotate in a circle within a single plane. A gas dispersion unit is provided separate from the wafer holder and facing the wafer loading surface of the wafer holder. A first pair of contacts are electrically connected to a heater and are mounted on the rotary shaft and a second pair of contacts are connected to a power source are in sliding contact with the first pair of contacts so that the rotation of the rotary shaft is not obstructed. This apparatus is useful as a continuous type automated CVD apparatus.

摘要翻译： PCT No.PCT / JP92 / 00135 Sec。 371日期：1992年10月27日 102（e）日期1992年10月27日PCT提交1992年2月12日PCT公布。 公开号WO92 / 15114 日期：1992年9月3日。一种用于通过CVD方法在晶片上形成薄膜制造半导体器件的连续型自动化装置。 该装置在将晶片保持在预定温度的同时移动晶片，并且控制单个晶片的生产和形成不同类型的多层膜。 该装置包括晶片保持器，用于支撑晶片保持器的旋转轴，使得晶片保持器的晶片加载表面在单个平面内以圆形旋转。 气体分散单元与晶片保持器分离设置并面向晶片保持器的晶片装载表面。 第一对触点电连接到加热器并且安装在旋转轴上，并且连接到电源的第二对触点与第一对触点滑动接触，使得旋转轴的旋转不是 阻碍了 该装置可用作连续型自动化CVD装置。

公开(公告)号：US06911405B2

公开(公告)日：2005-06-28

申请号：US09988685

申请日：2001-11-20

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Youichi Yamamoto ,  Yuichiro Kotake ,  Hiroshi Ikakura ,  Shoji Ohgawara

IPC分类号： H01L21/28 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/76 ,  H01L21/26 ,  H01L21/44

CPC分类号： H01L21/7685 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/32136 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76867 ,  H01L21/76886

摘要： A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

摘要翻译： 由N 2 N 2 N 2 O 2或其混合物之一组成的工艺气体被转化为等离子体，然后将铜布线层的表面暴露于等离子体 的处理气体，由此将铜布线层的表面部分重整并制成铜扩散防止屏障。 根据该方法，可以提供具有增加的操作速度和较少的铜扩散的贵金属半导体器件。

公开(公告)号：US06472334B2

公开(公告)日：2002-10-29

申请号：US09824106

申请日：2001-04-03

申请人： Hiroshi Ikakura ,  Tomomi Suzuki ,  Kazuo Maeda ,  Yoshimi Shioya ,  Kouichi Ohira

发明人： Hiroshi Ikakura ,  Tomomi Suzuki ,  Kazuo Maeda ,  Yoshimi Shioya ,  Kouichi Ohira

IPC分类号： H01L21469

CPC分类号： H01L21/02126 ,  C23C16/402 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612

摘要： There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.

摘要翻译： 提供了通过使具有硅氧烷键的化合物和Si-R键（R为烷基）与含有氧化气体和H 2的质子化反应气体反应而在基板上形成含硅绝缘膜的方法。

公开(公告)号：US06435196B1

公开(公告)日：2002-08-20

申请号：US09451706

申请日：1999-12-01

申请人： Noritada Satoh ,  Kouichi Ohira ,  Bunya Matsui ,  Kazuo Maeda

发明人： Noritada Satoh ,  Kouichi Ohira ,  Bunya Matsui ,  Kazuo Maeda

IPC分类号： B08B600

CPC分类号： H01L21/67028

摘要： The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, boron, or the like are doped in a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. This apparatus includes a chamber having an introduction port for an impurity-containing ion gas which is connected to an impurity-containing gas supply section, a substrate holder supporting a substrate which is to be ion-injected, or doped, or on which a film is formed using the impurity-containing gas, an introduction port of a water-containing gas which is provided upstream of the substrate holder in accordance with a flow direction of the impurity-containing gas, and is connected to a water-containing gas supply section, and first plasma generating means in a space extending from the introduction port for water-containing gas to the substrate holder for converting water-containing gas to a plasma.

摘要翻译： 本发明涉及在半导体衬底等中掺杂诸如磷，硼等杂质的杂质处理装置，或PSG（磷酸硅酸盐玻璃）膜，BSG（硼硅酸盐玻璃）膜或BPSG（ BoroPhospho硅酸盐玻璃）膜或碳膜等。该装置包括具有与含杂质气体供给部连接的含杂质离子气体导入口的室，支撑待离子化的基板的基板保持架 注入或掺杂，或者使用含杂质的气体形成膜，根据含杂质气体的流动方向设置在衬底保持器的上游的含水气体的引入口， 并且连接到含水气体供给部，并且在从含水气体的导入口延伸到用于转换含水气体的基板保持器的空间中的第一等离子体产生装置 g气体到等离子体。

公开(公告)号：US06642157B2

公开(公告)日：2003-11-04

申请号：US09742242

申请日：2000-12-22

申请人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

发明人： Yoshimi Shioya ,  Yuichiro Kotake ,  Youichi Yamamoto ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Shoji Ohgawara ,  Kouichi Ohira ,  Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： H01L21/02274 ,  C23C16/308 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/31116 ,  H01L21/3122 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31695 ,  H01L21/76802

摘要： There is provided the film forming method of forming the insulating film 204 containing silicon on the substrate 103 by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

摘要翻译： 提供了通过使具有硅氧烷键的化合物和氧化气体通过等离子体反应而在衬底103上形成含有硅的绝缘膜204的成膜方法。

公开(公告)号：US06630412B2

公开(公告)日：2003-10-07

申请号：US09897069

申请日：2001-07-03

申请人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

发明人： Yoshimi Shioya ,  Kouichi Ohira ,  Kazuo Maeda ,  Tomomi Suzuki ,  Hiroshi Ikakura ,  Youichi Yamamoto

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/308 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76834

摘要： In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate 21 from a surface of which a copper wiring 23 is exposed, the interlayer insulating film consists of multi-layered insulating films 24, 25, 29 and the insulating film 24, that contacts to the copper wiring 23, out of the multi-layered insulating films 24, 25, 29 is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N2) and ammonia (NH3) to react.