公开(公告)号：US08039782B2

公开(公告)日：2011-10-18

申请号：US11829709

申请日：2007-07-27

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US07919779B2

公开(公告)日：2011-04-05

申请号：US12369802

申请日：2009-02-12

申请人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

发明人： Kazuo Nishi ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L29/04

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/1446 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599

摘要： The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

摘要翻译： 根据本发明的半导体器件的制造方法包括以下步骤：在第一衬底上依次形成金属膜，绝缘膜和非晶半导体膜; 使金属膜和非晶半导体膜结晶化; 通过使用结晶化的半导体膜作为活性区域形成第一半导体元件; 通过使用粘合剂将支撑件附接到第一半导体元件; 导致金属膜和绝缘膜之间的分离; 将第二基板附接到所述分离的绝缘膜; 通过去除粘合剂来分离载体; 在所述第一半导体元件上形成非晶半导体膜; 以及使用所述非晶半导体膜形成作为有源区的第二半导体元件。

公开(公告)号：US07531784B2

公开(公告)日：2009-05-12

申请号：US11790482

申请日：2007-04-25

申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： H01J40/14

CPC分类号： G01J1/44 ,  H01L27/14609 ,  H04N5/35518 ,  H04N5/374

摘要： An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.

摘要翻译： 本发明的目的是提供一种能够在不扩大输出电压或输出电流的范围的情况下检测更宽范围的照度的光电转换装置。 光电转换装置具有光电转换元件，该光电转换元件包括光电转换元件和与该光电转换元件电连接的放大器电路;以及偏置切换单元，用于反转施加于光电转换元件的偏压。 使用偏置开关单元来反映施加到光电转换装置的偏置，由此光电转换装置可以在不扩大输出电压或输出电流的范围的情况下检测更宽的照度范围。

公开(公告)号：US07495272B2

公开(公告)日：2009-02-24

申请号：US10952914

申请日：2004-09-30

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L31/113

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.

摘要翻译： 可以减少由光传感器元件占据的面积，并且可以在有限的区域中集成多个元件，使得传感器元件可以具有更高的输出和更小的尺寸。 通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶硅膜）的TFT的输出放大器电路来实现更高的输出和小型化，其被用作 在塑料膜基材上的能够抵抗诸如焊料回流工艺的安装过程中的温度的有源层。 可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US07352044B2

公开(公告)日：2008-04-01

申请号：US10542147

申请日：2004-01-16

申请人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

发明人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

IPC分类号： H01L31/00

CPC分类号： H01L31/0264 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.

摘要翻译： 太阳能电池10包括依次层压在诸如硅衬底的衬底11上的金属电极层12，pin结100和透明电极层16。 针结100包括相继层叠的n层13，i层14和p层15。 i层14由含有氢原子的非晶硅化铁（Fe x Si x Si x H：H）形成。 在i层14中，其中包含的氢原子的至少一部分终止硅原子和/或铁原子的悬挂键，从而可以消除在非晶硅化铁膜中可能发生的多个陷阱水平，由此 i层14表现出作为本征半导体层的特性。

公开(公告)号：US20070257248A1

公开(公告)日：2007-11-08

申请号：US11790482

申请日：2007-04-25

申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： H01L29/06

CPC分类号： G01J1/44 ,  H01L27/14609 ,  H04N5/35518 ,  H04N5/374

摘要： An object is to provide a photoelectric conversion device capable of detecting a wider range of illuminance without expansion of a range of an output voltage or output current. The photoelectric conversion device has a photoelectric conversion device including a photoelectric conversion element and an amplifier circuit electrically connected to the photoelectric conversion element, and a bias switching unit for reversing a bias to be applied to the photoelectric conversion device. The bias to be applied to the photoelectric conversion device is reversed with use of the bias switching unit, whereby the photoelectric conversion device can detect a wider range of illuminance without expansion of a range of an output voltage or output current.

摘要翻译： 本发明的目的是提供一种能够在不扩大输出电压或输出电流的范围的情况下检测更宽范围的照度的光电转换装置。 光电转换装置具有光电转换元件，该光电转换元件包括光电转换元件和与该光电转换元件电连接的放大器电路;以及偏置切换单元，用于反转施加于光电转换元件的偏压。 使用偏置开关单元来反映施加到光电转换装置的偏置，由此光电转换装置可以在不扩大输出电压或输出电流的范围的情况下检测更宽的照度范围。

公开(公告)号：US20060261253A1

公开(公告)日：2006-11-23

申请号：US11436086

申请日：2006-05-18

申请人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Tatsuya Arao ,  Atsushi Hirose ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： H01L31/00

CPC分类号： G01J1/18 ,  G01J1/44 ,  G01J2001/4406 ,  G09G3/3611 ,  G09G2320/0626 ,  G09G2360/144 ,  G09G2360/145 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14643 ,  H01L27/14692 ,  H01L31/101 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to provide a photoelectric conversion device which detects light ranging from weak light to strong light. The present invention relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer, an amplifier circuit including a thin film transistor and a bias switching means, where a bias which is connected to the photodiode and the amplifier circuit is switched by the bias switching means when intensity of incident light exceeds predetermined intensity, and accordingly, light which is less than the predetermined intensity is detected by the photodiode and light which is more than the predetermined intensity is detected by the thin film transistor of the amplifier circuit. By the present invention, light ranging from weak light to strong light can be detected.

摘要翻译： 本发明的目的是提供一种检测从弱光到强光的光的光电转换装置。 本发明涉及具有光电转换层的光电二极管的光电转换装置，包括薄膜晶体管的放大电路和偏置开关装置，其中连接到光电二极管和放大器电路的偏压通过偏置 开关意味着当入射光的强度超过预定强度时，由光电二极管检测到小于预定强度的光，并且由放大电路的薄膜晶体管检测出大于预定强度的光。 通过本发明，可以检测从弱光到强光的光。

公开(公告)号：US20060157105A1

公开(公告)日：2006-07-20

申请号：US11324491

申请日：2006-01-04

申请人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： H01L31/00

CPC分类号： G04C10/02 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

公开(公告)号：US20060049478A1

公开(公告)日：2006-03-09

申请号：US10542147

申请日：2004-01-16

申请人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

发明人： Hiroshi Yamada ,  Hisao Morooka ,  Kazuo Nishi

IPC分类号： H01L31/105 ,  H01L31/06 ,  H01L31/00

CPC分类号： H01L31/0264 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises an n-layer 13, an i-layer 14, and a p-layer 15 which are laminated in succession. The i-layer 14 is formed by amorphous iron silicide (FexSiy:H) containing hydrogen atoms. In the i-layer 14, at least a part of the hydrogen atoms contained therein terminate dangling bonds of silicon atoms and/or iron atoms, so that a number of trap levels which may occur in an amorphous iron silicide film can be eliminated, whereby the i-layer 14 exhibits a characteristic as an intrinsic semiconductor layer.

摘要翻译： 太阳能电池10包括依次层压在诸如硅衬底的衬底11上的金属电极层12，pin结100和透明电极层16。 针结100包括相继层叠的n层13，i层14和p层15。 i层14由含有氢原子的非晶硅化铁（Fe x Si x Si x H：H）形成。 在i层14中，其中包含的氢原子的至少一部分终止硅原子和/或铁原子的悬挂键，从而可以消除在非晶硅化铁膜中可能发生的多个陷阱水平，由此 i层14表现出作为本征半导体层的特性。

公开(公告)号：US20050186725A1

公开(公告)日：2005-08-25

申请号：US11033380

申请日：2005-01-12

申请人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

发明人： Hiroki Adachi ,  Kazuo Nishi ,  Masato Yonezawa ,  Yukihiro Isobe ,  Hisato Shinohara

IPC分类号： H01L31/04 ,  H01L21/77 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/042 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  Y02E10/50

摘要： The invention is aimed to prevent that fall of characteristic of a solar battery and producing yield caused by particles of powder condition generating from working part at laser beam process in the method producing the solar battery by laser beam process. The constitution of the invention is characterized by comprising: a first step forming the lower electrode and the semiconductor layer on the insulating substrate by laminating; a second step forming a protective film on surface of the semiconductor; a third step forming an opening portion at the semiconductor layer, or the semiconductor layer and the lower electrode by laser beam process after the second step; and a fourth step removing the protective film.