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    COMPOSITE-MATERIAL STRUCTURE AND AIRCRAFT MAIN WING AND AIRCRAFT FUSELAGE PROVIDED WITH THE SAME
    11.
    发明申请
    COMPOSITE-MATERIAL STRUCTURE AND AIRCRAFT MAIN WING AND AIRCRAFT FUSELAGE PROVIDED WITH THE SAME 有权
    复合材料结构与飞机主机与飞机提供的融合

    公开(公告)号：US20120121854A1

    公开(公告)日：2012-05-17

    申请号：US13386737

    申请日：2010-10-05

    申请人： Shinichi Yoshida ,  Hideaki Tanaka ,  Yuya Tanaka

    发明人： Shinichi Yoshida ,  Hideaki Tanaka ,  Yuya Tanaka

    IPC分类号： B32B3/10

    CPC分类号： B64C3/187 ,  B32B3/08 ,  B32B3/14 ,  B32B3/263 ,  B32B3/266 ,  B32B7/005 ,  B32B7/02 ,  B32B7/08 ,  B64C1/061 ,  B64C1/064 ,  B64C1/068 ,  B64C1/069 ,  B64C1/1446 ,  B64C1/1492 ,  B64C3/182 ,  B64C3/26 ,  B64C2001/0072 ,  Y02T50/43 ,  Y10T428/24322

    摘要： An object is to provide a main wing whose weight can be reduced, taking into consideration the stress concentration at circumferential edges of access holes. A main wing (1) on which a tensile load is exerted in a longitudinal direction includes a holed structural member that is a composite material made of fiber reinforced plastic which extends in the longitudinal direction and in which access holes (5) are formed and that serves as a center portion (3b); and a front portion (3a) and a rear portion (3c) that are composite materials made of fiber reinforced plastic which extend in the longitudinal direction of the main wing 1 and which are connected to side portions of the center portion (3b). The tensile rigidity of the center portion (3b) in the longitudinal direction is set to be lower than the tensile rigidity of the front portion (3a) and the rear portion (3c) in the longitudinal direction.

    摘要翻译： 目的是提供一种能够减小重量的主翼，同时考虑到进入孔的圆周边缘处的应力集中。 在纵向上施加拉伸载荷的主翼（1）包括作为由长度方向延伸并且形成有进入孔（5）的由纤维增强塑料制成的复合材料的孔结构构件，并且形成有进入孔（5） 用作中心部分（3b）; 以及作为由主翼1的长度方向延伸并与中央部3b的侧部连接的纤维增强塑料制的复合材料的前部3a和后部3c。 中心部分（3b）在纵向上的拉伸刚度被设定为低于前部（3a）和后部（3c）在纵向上的拉伸刚度。

    Method of manufacturing semiconductor device and semiconductor device manufactured thereof
    13.
    发明授权
    Method of manufacturing semiconductor device and semiconductor device manufactured thereof 有权
    制造半导体器件和半导体器件的方法

    公开(公告)号：US08067776B2

    公开(公告)日：2011-11-29

    申请号：US12105318

    申请日：2008-04-18

    申请人： Shigeharu Yamagami ,  Masakatsu Hoshi ,  Tetsuya Hayashi ,  Hideaki Tanaka

    发明人： Shigeharu Yamagami ,  Masakatsu Hoshi ,  Tetsuya Hayashi ,  Hideaki Tanaka

    IPC分类号： H01L29/12 ,  H01L29/76 ,  H01L29/78 ,  H01L21/28 ,  H01L21/336

    CPC分类号： H01L29/66068 ,  H01L29/513 ,  H01L29/7828

    摘要： Methods of manufacturing a semiconductor device including a semiconductor substrate and a hetero semiconductor region including a semiconductor material having a band gap different from that of the semiconductor substrate and contacting a portion of a first surface of the semiconductor substrate are taught herein, as are the resulting devices. The method comprises depositing a first insulating film on exposed portions of the first surface of the semiconductor substrate and on exposed surfaces of the hetero semiconductor material and forming a second insulating film between the first insulating film and facing surfaces of the semiconductor substrate and the hetero semiconductor region by performing a thermal treatment in an oxidizing atmosphere.

    摘要翻译： 本文教导了制造包括半导体衬底和包括具有与半导体衬底的带隙不同的带隙并与半导体衬底的第一表面的一部分接触的半导体材料的半导体区域的半导体器件的制造方法， 设备。 该方法包括在半导体衬底的第一表面的暴露部分和异质半导体材料的暴露表面上沉积第一绝缘膜，并在第一绝缘膜和半导体衬底和异质半导体的相对表面之间形成第二绝缘膜 通过在氧化气氛中进行热处理。

    Method of manufacturing semiconductor device
    14.
    发明授权
    Method of manufacturing semiconductor device 有权

    公开(公告)号：US07989295B2

    公开(公告)日：2011-08-02

    申请号：US13014190

    申请日：2011-01-26

    申请人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

    发明人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

    摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

    Rolling bearing
    15.
    发明授权
    Rolling bearing 失效
    滚动轴承

    公开(公告)号：US07938583B2

    公开(公告)日：2011-05-10

    申请号：US11783696

    申请日：2007-04-11

    申请人： Hideaki Tanaka ,  Ryouichi Nakajima

    发明人： Hideaki Tanaka ,  Ryouichi Nakajima

    IPC分类号： F16C33/66 ,  F16C33/44

    CPC分类号： F16C33/6688 ,  F16C33/44 ,  F16C33/6633 ,  Y10S384/907

    摘要： A rolling bearing made of stainless steel for use in conditions where hydrofluoric acid or fluorine grease is present can prevent boundary lubrication due to the invasion of metal corrosion powder into rolling surface of the bearing, and thus prevent the rapid advance of internal wear. The rolling bearing is highly durable and has a long life even if used in metal corrosive environments. A deep-groove rolling bearing includes bearing rings (inner ring and outer ring), rolling elements, and a retainer all made of stainless steel, and solidified lubricating oil sealed in the rolling bearing. The solidified lubricating oil is made by heat curing a mixture of lubricating oil or grease containing perfluoropolyether and a thermoplastic resin. Contact seals made of fluorine rubber seal the solidified lubricating oil. Even if metal abrasion powder is produced by effect of perfluoropolyether or hydrofluoric acid, it will be held embedded in the solidified lubricating oil, so that abnormal wear will not occur.

    摘要翻译： 用于存在氢氟酸或氟油脂的条件的不锈钢滚动轴承可以防止金属腐蚀粉末侵入轴承滚动面的边界润滑，从而防止内部磨损的快速进展。 滚动轴承高度耐用，即使用于金属腐蚀环境，寿命长。 深沟滚动轴承包括轴承环（内圈和外圈），滚动元件和全部由不锈钢制成的保持架，以及密封在滚动轴承中的固化润滑油。 固化润滑油是通过加热固化含有全氟聚醚和热塑性树脂的润滑油或油脂的混合物制成的。 接触密封由氟橡胶密封固化润滑油。 即使通过全氟聚醚或氢氟酸的作用产生金属磨损粉末，也将其保持在固化的润滑油中，从而不会发生异常磨损。

    Semiconductor device
    16.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07902555B2

    公开(公告)日：2011-03-08

    申请号：US12325377

    申请日：2008-12-01

    申请人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Hideaki Tanaka ,  Shigeharu Yamagami

    发明人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Hideaki Tanaka ,  Shigeharu Yamagami

    IPC分类号： H01L29/15 ,  H01L31/0312

    CPC分类号： H01L29/0847 ,  H01L29/0623 ,  H01L29/0642 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7828

    摘要： A hetero semiconductor corner region, which is a current-concentration relief region that keeps a reverse bias current from concentrating on the convex corner, is arranged in a hetero semiconductor region. Thereby, a current concentration on the convex corner can be prevented. As a result, an interrupting performance can be improved at the time of interruption, and at the same time, the generation of the hot spot where in a specific portion is prevented at the time of conduction to suppress deterioration in a specific portion, thereby ensuring a long-term reliability. Further, when the semiconductor chip is used in an L load circuit or the like, for example, at the time of conduction or during a transient response time to the interrupted state, in an index such as a short resistant load amount and an avalanche resistant amount, which are indexes of a breakdown tolerance when overcurrent or overvoltage occurs, the current concentration on a specific portion can be prevented, and thus, these breakdown tolerances can also be improved.

    摘要翻译： 作为将反向偏置电流保持集中在凸角上的电流 - 浓度释放区域的异质半导体角区域设置在异质半导体区域中。 由此，可以防止凸角上的电流集中。 结果，在中断时可以提高中断性能，同时，在导通时防止特定部位的热点的产生，抑制特定部分的劣化，从而确保 长期可靠。 此外，例如在导通时或半导体芯片用于L负载电路等时，例如，在短时间响应时间到中断状态时，以诸如短路负载量和雪崩阻抗的指标 量是当发生过电流或过电压时的击穿容限的指标，可以防止特定部分上的电流浓度，因此也可以提高这些击穿公差。

    Curable composition
    18.
    发明授权
    Curable composition 失效
    可固化组合物

    公开(公告)号：US07709588B2

    公开(公告)日：2010-05-04

    申请号：US12146708

    申请日：2008-06-26

    申请人： Yuuji Kimura ,  Tatsuhiro Futami ,  Hideaki Tanaka ,  Genichirou Enna

    发明人： Yuuji Kimura ,  Tatsuhiro Futami ,  Hideaki Tanaka ,  Genichirou Enna

    IPC分类号： C08G77/22 ,  C08G65/00

    CPC分类号： C08G65/336 ,  C08K5/548 ,  C08L71/02

    摘要： To provide a hardly colored curable composition having an excellent storage stability while maintaining fast curing properties.A curable composition which comprises a polymer (P) having a polyoxyalkylene chain and a group of the following formula (1) and a compound (S) having a mercapto group and a group of the following formula (2), and which contains from 0.01 to 0.50 part by mass of the compound (S) per 100 parts by mass of the polymer (P): —Si(—X1)3  (1) —Si(—X2)m(—Y2)3-m  (2) wherein symbols have the following meanings: X1 and X2: each independently a C1-6 alkoxy group, Y2: a C1-6 alkyl group, and m: 1, 2 or 3.

    摘要翻译： 提供具有优异的储存稳定性的几乎不着色的固化性组合物，同时保持快速固化性能。 一种可固化组合物，其包含具有聚氧化烯链的聚合物（P）和下式（1）的基团和具有巯基的化合物（S）和下式（2）的基团，并且其含有0.01 相对于每100质量份聚合物（P），化合物（S）为0.50质量份：-Si（-X1）3（1）-Si（-X2）m（-Y2）3-m（2） 其中符号具有以下含义：X1和X2各自独立地为C1-6烷氧基，Y2为C1-6烷基，m为1,2或3。

    Semiconductor device and method of producing the same
    19.
    发明授权
    Semiconductor device and method of producing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07671383B2

    公开(公告)日：2010-03-02

    申请号：US11714214

    申请日：2007-03-06

    申请人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

    发明人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

    IPC分类号： H01L29/732

    CPC分类号： H01L29/267 ,  H01L21/0475 ,  H01L29/0623 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7828

    摘要： A semiconductor device, includes: a first conductivity type semiconductor base having a main face; a hetero semiconductor region contacting the main face of the semiconductor base and forming a hetero junction in combination with the semiconductor base, the semiconductor base and the hetero semiconductor region in combination defining a junction end part; a gate insulating film defining a junction face in contact with the semiconductor base and having a thickness; and a gate electrode disposed adjacent to the junction end part via the gate insulating film and defining a shortest point in a position away from the junction end part by a shortest interval, a line extending from the shortest point to a contact point vertically relative to the junction face, forming such a distance between the contact point and the junction end part as to be smaller than the thickness of the gate insulating film contacting the semiconductor base.

    摘要翻译： 一种半导体器件，包括：具有主面的第一导电型半导体基底; 与半导体基板的主面接触并与半导体基底结合形成异质结的异质半导体区域，半导体基底和异质半导体区域组合形成连接端部; 限定与半导体基底接触并具有厚度的接合面的栅极绝缘膜; 以及栅电极，其经由所述栅极绝缘膜与所述接合端部相邻设置，并且在远离所述接合端部的位置中以最短间隔限定最短点，从所述最短点到接触点相对于所述接合端垂直延伸的线 接合面在接触点和接合端部之间形成的距离小于与半导体基底接触的栅极绝缘膜的厚度。