公开(公告)号：US5847468A

公开(公告)日：1998-12-08

申请号：US873563

申请日：1997-06-12

申请人： Hiroshi Nomura ,  Iwao Higashikawa ,  Akitoshi Kumagae

发明人： Hiroshi Nomura ,  Iwao Higashikawa ,  Akitoshi Kumagae

IPC分类号： G03F9/00 ,  H01L21/027 ,  H01L23/544

CPC分类号： G03F9/7076 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002

摘要： An alignment mark formed on a surface of substrate for aligning with a mask through an irradiation of alignment light, which comprises a step formed with a concave portion and a convex portion and a metallic film deposited along the concave portion and the convex portion. A light absorption layer is formed over at least one of the concave portion and the convex portion reflecting the step, the light absorption layer lying over the concave portion having a different thickness from that of the light absorption layer lying over the convex portion when the light absorption layer is formed over both the concave portion and the convex portion, the light absorption layer comprising a material capable of absorbing at least a portion of wavelength region of the alignment light. The light absorption layer is desirably formed in a larger thickness on the convex portion of the step as compared with that on the concave portion. Desirably, the light absorption layer is a resist capable of absorbing a portion of wavelength region of the alignment light, or a resist containing a material capable of absorbing a portion of wavelength region of the alignment light.

公开(公告)号：US5326672A

公开(公告)日：1994-07-05

申请号：US964715

申请日：1992-10-22

申请人： Toshihiko Tanaka ,  Mitsuaki Morigami ,  Iwao Higashikawa ,  Takeo Watanabe

发明人： Toshihiko Tanaka ,  Mitsuaki Morigami ,  Iwao Higashikawa ,  Takeo Watanabe

IPC分类号： G03F7/30 ,  G03C5/00

CPC分类号： G03F7/30

摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.

摘要翻译： 根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力， 冲洗液在冲洗的临界条件下干燥，以免引起表面张力。 因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。 另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。 通过提供这种效果，产品的产量增加。 此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源

公开(公告)号：US5851842A

公开(公告)日：1998-12-22

申请号：US857360

申请日：1997-05-15

申请人： Ryota Katsumata ,  Nobuo Hayasaka ,  Naoki Yasuda ,  Hideshi Miyajima ,  Iwao Higashikawa ,  Masaki Hotta

发明人： Ryota Katsumata ,  Nobuo Hayasaka ,  Naoki Yasuda ,  Hideshi Miyajima ,  Iwao Higashikawa ,  Masaki Hotta

IPC分类号： G01R15/22 ,  C23C16/50 ,  C23C16/52 ,  G01B11/06 ,  G01J5/00 ,  G01J5/58 ,  G01N21/27 ,  G01N21/35 ,  G01N21/3563 ,  G01N27/60 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/66 ,  H05H1/46 ,  H01L21/00

CPC分类号： H01J37/32935 ,  B24B37/013 ,  C23C16/50 ,  C23C16/52 ,  G01B11/0683 ,  G01J5/0003 ,  H01L22/26 ,  H01L22/12

摘要： The measurement system comprises a holder for holding a dielectric film formed on at least a semiconductive substrate and sandwiched between the substrate and a conductive film, voltage application terminals for applying voltage between the substrate and the conductive film, variable voltage source for supplying the voltage to the voltage application terminals, a light source for irradiating the dielectric film with light including wavelength of an infrared region and transmitting the light through the dielectric film, light absorbance detector receiving the light transmitted through the dielectric film, for detecting absorbance of an absorbed light component in an absorption wavelength region intrinsic to the dielectric film, and a potential difference measurement unit for measuring a potential difference between the substrate and the conductive film of the dielectric film on the basis of change in absorbance of the light component when the voltage is changed by the variable voltage source.

摘要翻译： 该测量系统包括：保持器，用于保持形成在至少半导体基板上并夹在基板和导电膜之间的电介质膜，用于在基板和导电膜之间施加电压的电压施加端子，用于将电压提供给 电压施加端子，用于用包括红外区域的波长的光照射电介质膜并将光透过电介质膜的光源，接收透过电介质膜的光的吸光度检测器，用于检测吸收的光成分的吸光度 在电介质膜本征的吸收波长区域中，以及电位差测量单元，用于根据电压变化时的光成分的吸光度的变化来测定基板与电介质膜的导电膜之间的电位差 可变电压s 我们

公开(公告)号：US5262282A

公开(公告)日：1993-11-16

申请号：US908918

申请日：1992-07-02

申请人： Katsuhiko Hieda ,  Iwao Higashikawa

发明人： Katsuhiko Hieda ,  Iwao Higashikawa

IPC分类号： G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  H01L21/316 ,  H01L21/3213

CPC分类号： G03F7/38 ,  G03F7/038 ,  G03F7/265 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/316 ,  H01L21/32139

摘要： A pattern forming method of a resist to be used in the manufacturing process of a semiconductor device. The desired area of a resist film is made hydrophilic by an exposure and a mask material is precipitated and deposited on the area of resist film made hydrophilic in the solution. The patterning of resist film is thus carried out, and a pattern of high reliability is formed. After exposure, by silylizing or baking the resist film, a pattern of higher reliability is formed. Furthermore, after patterning of the resist film, the precipitation and deposition of the mask material are carried out again, and a reversed pattern of high reliability is formed by eliminating the resist film made with patterning by the lift-off process.

摘要翻译： 在半导体器件的制造工艺中使用的抗蚀剂的图案形成方法。 通过曝光使抗蚀剂膜的期望面积变得亲水，并且掩模材料沉淀并沉积在在溶液中形成亲水性的抗蚀剂膜的区域上。 因此进行抗蚀剂膜的图案化，形成高可靠性的图案。 曝光后，通过对抗蚀剂膜进行甲硅烷基化或烘焙，形成更高可靠性的图案。 此外，在抗蚀剂膜图案化之后，再次进行掩模材料的沉淀和沉积，并且通过消除通过剥离处理而形成图案化的抗蚀剂膜，形成高可靠性的反转图案。

公开(公告)号：US20100081091A1

公开(公告)日：2010-04-01

申请号：US12556425

申请日：2009-09-09

申请人： Koji HASHIMOTO ,  Daisuke Kawamura ,  Kentaro Matsunaga ,  Iwao Higashikawa

发明人： Koji HASHIMOTO ,  Daisuke Kawamura ,  Kentaro Matsunaga ,  Iwao Higashikawa

IPC分类号： G03F7/20

CPC分类号： H01L21/32139 ,  H01L21/0337

摘要： According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including; sequentially forming a first film and a second film on a base film; processing the second film, thereby forming a second pattern; processing the first film with the second pattern, thereby forming a first pattern; removing the second pattern; depositing a third film on the base film and the first pattern; processing the third film, thereby forming a third pattern on side walls of the first pattern; removing the first pattern; and processing the base film with the third pattern; wherein, when processing the third film, a process condition is adjusted based on at least one information of a size of the second pattern and a size of the first pattern.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件的制造方法，该方法包括： 在基膜上依次形成第一膜和第二膜; 处理第二膜，从而形成第二图案; 用第二图案处理第一胶片，从而形成第一图案; 去除第二模式; 在基膜和第一图案上沉积第三膜; 处理第三膜，从而在第一图案的侧壁上形成第三图案; 去除第一个模式; 并用第三图案处理基膜; 其中，当处理所述第三胶片时，基于所述第二图案的尺寸和所述第一图案的尺寸的至少一个信息来调整处理条件。

公开(公告)号：US06765673B1

公开(公告)日：2004-07-20

申请号：US09615605

申请日：2000-07-13

申请人： Iwao Higashikawa

发明人： Iwao Higashikawa

IPC分类号： G01B1100

CPC分类号： G03F1/78 ,  G03F1/84

摘要： Disclosed is a pattern forming method, in which a mask blank for preparation of a photomask is exposed in a desired pattern to form a mask pattern on the mask blank. Position measuring marks are formed on the diagonally facing corners of a main surface of the mask blank to detect a defect on the main surface of the mask blank. The relative positions of the detected defect and the mask pattern that is to be formed on the mask blank are compared, and the pattern position is selected such that the defect overlaps with the pattern. Then, the position measuring marks are measured to calculate the exposure position, and exposure treatment is applied to the selected position.

摘要翻译： 公开了一种图案形成方法，其中用于制备光掩模的掩模坯料以期望的图案曝光以在掩模坯料上形成掩模图案。 在掩模坯料的主表面的对角面上形成位置测量标记，以检测掩模坯料的主表面上的缺陷。 将检测到的缺陷和将要形成在掩模坯料上的掩模图案的相对位置进行比较，并且选择图案位置使得缺陷与图案重叠。 然后，测量位置测量标记以计算曝光位置，并将曝光处理应用于所选择的位置。

公开(公告)号：US06542237B1

公开(公告)日：2003-04-01

申请号：US09520630

申请日：2000-03-07

申请人： Suigen Kyoh ,  Iwao Higashikawa ,  Soichi Inoue

发明人： Suigen Kyoh ,  Iwao Higashikawa ,  Soichi Inoue

IPC分类号： G01B1100

CPC分类号： G03F9/7003

摘要： An exposure method forms a plurality of patterns on a substrate, which is set on a stage of an exposure apparatus, through at least one mask. The method equalizes first positional linear error components of a pattern to be formed by the mask on a first coordinate system defined on the substrate to second positional linear error components of the pattern on a second coordinate system on which the stage is moved, by correcting coordinates for moving the stage on the second coordinate system. The method is capable of aligning the boundaries of patterns with each other on the substrate, to leave only positional linear error components on the patterns. These positional linear error components are removable to leave minimum random residual errors on the patterns, and therefore, the patterns on the substrate are precisely at specified positions.

摘要翻译： 曝光方法通过至少一个掩模在设置在曝光装置的台上的基板上形成多个图案。 该方法通过在基板上定义的第一坐标系上的掩模形成的图案的第一位置线性误差分量与移动台上的第二坐标系上的图案的第二位置线性误差分量相等， 用于在第二坐标系上移动舞台。 该方法能够使衬底上的图案的边界彼此对准，从而在图案上仅留下位置线性误差分量。 这些位置线性误差分量是可去除的，以在图案上留下最小的随机残留误差，因此衬底上的图案精确地在指定位置。

公开(公告)号：US6040114A

公开(公告)日：2000-03-21

申请号：US838944

申请日：1997-04-23

申请人： Soichi Inoue ,  Iwao Higashikawa ,  Yoji Ogawa ,  Shigehiro Hara ,  Kazuko Yamamoto

发明人： Soichi Inoue ,  Iwao Higashikawa ,  Yoji Ogawa ,  Shigehiro Hara ,  Kazuko Yamamoto

IPC分类号： H01L21/027 ,  G03F7/20 ,  B03C5/00

CPC分类号： G03F7/70425

摘要： A method of forming a pattern for a semiconductor device comprises the steps of forming a photosensitive film on a substrate and radiating the photosensitive film on the substrate with a beam of a predetermined shape consisting of one of a charged particle beam and an electromagnetic beam, thereby forming an exposed region of a desired shape, the latter step including the step of exposing each of unit regions by a single shot of the beam of the predetermined shape for a predetermined period of time, repeating the exposure a plurality of times, and butt-joining the exposed unit regions to thereby form the exposed region of the desired shape, wherein, in the step of forming the exposed region of the desired shape, butting portions of the unit regions are situated in a first area of a layer to be formed other than a second area in the layer in which predetermined characteristics of a function of the semiconductor device are determined by a pattern width of the exposed region in association with another pattern formed in another layer.

摘要翻译： 一种形成半导体器件的图案的方法包括以下步骤：在基片上形成感光膜，并用由带电粒子束和电磁束之一构成的预定形状的光束将光敏膜照射在基片上，由此 形成期望形状的曝光区域，后一步骤包括通过预定时间段的光束的单次曝光曝光每个单元区域的步骤，重复曝光多次， 接合曝光的单元区域，从而形成所需形状的曝光区域，其中在形成所需形状的曝光区域的步骤中，单元区域的对接部分位于待形成的层的第一区域中 比在半导体器件的功能的预定特性由相关联中的暴露区域的图案宽度确定的层中的第二区域 n在另一层中形成另一图案。

公开(公告)号：US4510173A

公开(公告)日：1985-04-09

申请号：US601934

申请日：1984-04-19

申请人： Iwao Higashikawa ,  Tsunetoshi Arikado

发明人： Iwao Higashikawa ,  Tsunetoshi Arikado

IPC分类号： H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  B05D3/06

CPC分类号： H01L21/31051 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/76819

摘要： A flat film can be formed on a functional structure having uneven surface formed on a semiconductor substrate firstly by applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on the uneven surface of the functional structure. Then, the organic material is fluidized by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material. Energy beams are irradiated to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a cured film which is not deformed by heat and energy beams.

摘要翻译： 首先，可以通过施加能够通过能量束固化的成膜有机材料并且在功能结构的不平坦表面上通过热显示出流动性，可以在具有形成在半导体衬底上的不平坦表面的功能结构上形成平坦膜。 然后，通过向所施加的有机材料施加热而使有机材料流化，从而使有机材料的表面基本上变平。 能量束被照射到平坦的有机材料上以固化扁平的有机材料，从而将扁平的有机材料转变成不被热能和能量束变形的固化膜。

公开(公告)号：US4264715A

公开(公告)日：1981-04-28

申请号：US94048

申请日：1979-11-14

申请人： Akira Miura ,  Shozo Hideyama ,  Iwao Higashikawa

发明人： Akira Miura ,  Shozo Hideyama ,  Iwao Higashikawa

IPC分类号： G03F1/00 ,  G03F1/68 ,  G03F1/80 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/039 ,  G03F7/325

摘要： A method of preparing a fine and highly precise resist pattern comprising a step of forming a positive resist layer consisting of poly-(methacrylic anhydride) on a substrate, a step of irradiating the resist layer thus formed with a predetermined pattern of ionizing radiation and a step of developing the irradiated resist pattern with a developer comprising a solvent mixture composed of a polar organic solvent (A) capable of dissolving poly-(methyacrylic anhydride) and a non-solvent (B) incapable of dissolving poly-(methacrylic anhydride).

摘要翻译： 一种制备精细且高精度的抗蚀剂图案的方法，包括在基板上形成由聚（甲基丙烯酸酐）组成的正性抗蚀剂层的步骤，以预定的电离辐射图案照射如此形成的抗蚀剂层的步骤和 用包含由能够溶解聚（甲基丙烯酸酐）的极性有机溶剂（A）和不溶于聚（甲基丙烯酸酐）的非溶剂（B））组成的溶剂混合物的显影剂显影照射的抗蚀剂图案的步骤。