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    CVD apparatus with high throughput and cleaning method therefor
    4.
    发明授权
    CVD apparatus with high throughput and cleaning method therefor 失效
    高产量的CVD装置及其清洗方法

    公开(公告)号：US6164295A

    公开(公告)日：2000-12-26

    申请号：US848264

    申请日：1997-04-29

    申请人： Akio Ui ,  Naruhiko Kaji ,  Hideshi Miyajima ,  Nobuo Hayasaka

    发明人： Akio Ui ,  Naruhiko Kaji ,  Hideshi Miyajima ,  Nobuo Hayasaka

    IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31

    CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01L21/02049

    摘要： There is provided a CVD apparatus and a cleaning method which can precisely perform cleaning at a high speed, in order to increase the throughput of a CVD apparatus. A film formation gas (e.g., SiH.sub.4 and O.sub.2 gases) is introduced from a source gas supply pipe into a chamber to form a silicon oxide film (SiO.sub.2) on a wafer placed on a susceptor by using a plasma or the like. A thin film (SiO.sub.2) mainly consisting of silicon and oxygen, an imperfect oxide film of silicon, or the like also attaches to a wall surface and the respective surfaces of a window plate, a vacuum seal portion, the susceptor, an electrode, an insulator, an exhaust pipe, and the like in the chamber. An HF-based gas supply system for a cleaning etching gas is arranged to clean the interior of the chamber of the CVD apparatus. Particularly, a film formed with a source gas of Si.sub.x H.sub.2x+2 (x=1, 2, 3) and O.sub.2 is more perfect than an imperfect oxide film (e.g., TEOS) formed with an organic silicon source gas, so that bonding is strong, and the etching rate decreases in plasma cleaning and the like. Cleaning with the HF gas according to this invention is very effective.

    摘要翻译： 提供了能够高精度地进行清洗的CVD装置和清洗方法，以提高CVD装置的生产量。 将成膜气体（例如SiH 4和O 2气体）从源气体供给管引入室中，通过使用等离子体等在放置在基座上的晶片上形成氧化硅膜（SiO 2）。 主要由硅和氧组成的薄膜（SiO 2），硅的不完全氧化膜等也附着在壁面，窗板，真空密封部分，基座，电极， 绝缘体，排气管等。 布置用于清洁蚀刻气体的基于HF的气体供应系统以清洁CVD设备的室的内部。 特别地，形成有SixH2x + 2（x = 1,2,3）和O2的源气体的膜比用有机硅源气体形成的不完全氧化膜（例如TEOS）更完美，使得结合强 ，并且等离子体清洗等中的蚀刻速率降低。 使用根据本发明的HF气体的清洁是非常有效的。

    Method of manufacturing semiconductor device
    6.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06746969B2

    公开(公告)日：2004-06-08

    申请号：US09982003

    申请日：2001-10-19

    申请人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

    发明人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

    IPC分类号： H01L2131

    CPC分类号： H01L21/02351 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76834

    摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

    摘要翻译： 一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体 所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度 的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。