公开(公告)号：US20100233865A1

公开(公告)日：2010-09-16

申请号：US12720831

申请日：2010-03-10

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/02

CPC分类号： H01L21/31604 ,  H01L21/3145 ,  H01L28/40

摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.

摘要翻译： 提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。 制造方法包括：在用作电容器的一个电极的导体上形成氧化膜或氮氧化物膜; 在氧化膜或氮氧化物膜上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

公开(公告)号：US20100210097A1

公开(公告)日：2010-08-19

申请号：US12706237

申请日：2010-02-16

申请人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

发明人： Hiroshi Sato ,  Kenji Matsumoto ,  Hitoshi Itoh

IPC分类号： H01L21/28

CPC分类号： H01L21/28194 ,  H01L21/823857 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： Provided is a manufacturing method of a semiconductor device including a gate insulating film which can be formed into a thin film and of which film composition is easy to be controlled. The manufacturing method includes: forming a manganese oxide film for serving as a gate insulating film on a semiconductor substrate, on which a transistor is formed; forming a conductive film for serving as a gate electrode on the manganese oxide film; and forming a gate electrode and a gate insulating film by processing the conductive film and the manganese oxide film.

摘要翻译： 提供一种半导体器件的制造方法，其包括可以形成为薄膜并且易于控制膜组成的栅极绝缘膜。 制造方法包括：在形成有晶体管的半导体衬底上形成用作栅极绝缘膜的氧化锰膜; 在氧化锰膜上形成用作栅电极的导电膜; 以及通过处理导电膜和氧化锰膜形成栅电极和栅极绝缘膜。

公开(公告)号：US08349725B2

公开(公告)日：2013-01-08

申请号：US12920701

申请日：2009-02-20

申请人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

发明人： Hiroshi Sato ,  Hitoshi Itoh ,  Kenji Matsumoto

IPC分类号： H01L21/4763

CPC分类号： H01L21/67207 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/67253 ,  H01L21/67742 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of the barrier layer or from in the barrier layer onto a surface of the seed layer; supplying a cleaning liquid to the seed layer in order to remove the manganese separated out on the surface of the seed layer by the heating; and after the supply of the cleaning liquid, forming the upper conductive channel mainly made of copper in the recess.

摘要翻译： 本发明是一种制造半导体器件的方法，包括：在形成在衬底表面上的层间绝缘膜中形成凹部，所述凹部被构造成嵌入有主要由铜制成的上部导电沟道，以与下部电连接 导电通道; 提供含锰有机化合物的气体，形成由锰化合物制成的阻挡层，以防止铜向层间绝缘膜扩散，使得阻挡层覆盖层间绝缘膜的暴露表面; 在形成阻挡层之后，向阻挡层供给有机酸，以增加形成阻挡层的锰化合物中的锰的比例; 在供给有机酸之后，在阻挡层的表面上形成主要由铜制成的种子层; 在形成种子层之后，加热衬底以将锰从阻挡层的表面或阻挡层中分离出到种子层的表面上; 向种子层供应清洗液，以便通过加热去除种子层表面上分离的锰; 并且在供应清洁液之后，在凹槽中形成主要由铜制成的上导电通道。

公开(公告)号：US20120135612A1

公开(公告)日：2012-05-31

申请号：US13378535

申请日：2010-06-16

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hidenori Miyoshi ,  Shigetoshi Hosaka ,  Hiroshi Sato ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/02

CPC分类号： H01L21/76814 ,  C23C16/02 ,  C23C16/40 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76867

摘要： A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.

摘要翻译： 公开了一种成膜方法，其中在被处理物体上形成包含锰的薄膜，其表面上由低k膜构成并具有凹陷的绝缘层。 该方法包括亲水化步骤，其中绝缘层的表面被亲水化以使表面亲水，并且薄膜形成步骤通过进行成膜在亲水化绝缘层的表面上形成含有锰的薄膜 在亲水化绝缘层的表面上使用含锰材料气体的方法。 因此，在由具有低介电常数的低k膜构成的绝缘层的表面上有效地形成了包含锰的薄膜，例如MnO x膜。

公开(公告)号：US08124492B2

公开(公告)日：2012-02-28

申请号：US12720831

申请日：2010-03-10

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Hiroshi Sato

IPC分类号： H01L21/20

CPC分类号： H01L21/31604 ,  H01L21/3145 ,  H01L28/40

摘要： Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide film or an oxynitride film on a conductor for serving as one electrode of a capacitor; forming, on the oxide film or the oxynitride film, a manganese oxide film for serving as a dielectric film of the capacitor; and forming, on the manganese oxide film, a conductive film for serving as the other electrode of the capacitor.

摘要翻译： 提供一种具有可形成为薄膜的电介质膜的电容器的半导体器件制造方法，可以在低温下形成，并具有容易控制的特性。 制造方法包括：在用作电容器的一个电极的导体上形成氧化膜或氮氧化物膜; 在氧化膜或氮氧化物膜上形成用作电容器的电介质膜的氧化锰膜; 在氧化锰膜上形成用作电容器的另一个电极的导电膜。

公开(公告)号：US20060121307A1

公开(公告)日：2006-06-08

申请号：US11250532

申请日：2005-10-17

申请人： Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh ,  Kenji Matsumoto

发明人： Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh ,  Kenji Matsumoto

IPC分类号： C23C16/00 ,  B32B15/00 ,  C23C14/32

CPC分类号： H01L21/288 ,  C23C18/04 ,  C23C18/08 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  Y10T428/12819 ,  Y10T428/12903

摘要： In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.

摘要翻译： 在形成在基板上的Cu扩散防止膜上形成Cu膜的成膜方法中，在Cu扩散防止膜上形成有将Cu膜附着在Cu扩散防止膜上的接触膜。 将前体溶解在超临界状态的介质中的处理介质供给到基板，使得在接触膜上形成Cu膜。

公开(公告)号：US20160331470A1

公开(公告)日：2016-11-17

申请号：US15111814

申请日：2015-01-09

申请人： Hiroshi Sato

发明人： Hiroshi Sato

IPC分类号： A61B34/20 ,  A61M1/00 ,  A61B90/11 ,  A61M5/158 ,  A61B17/3209 ,  A61B34/00

CPC分类号： A61B34/20 ,  A61B5/062 ,  A61B17/32093 ,  A61B34/30 ,  A61B34/35 ,  A61B34/73 ,  A61B90/11 ,  A61B2017/320052 ,  A61B2034/2051 ,  A61B2034/2059 ,  A61B2034/2065 ,  A61B2034/2072 ,  A61B2034/732 ,  A61B2090/061 ,  A61B2090/062 ,  A61B2090/374 ,  A61B2090/376 ,  A61B2090/3762 ,  A61B2090/378 ,  A61B2090/392 ,  A61B2090/3954 ,  A61B2090/3966 ,  A61B2218/002 ,  A61B2218/007 ,  A61M1/008 ,  A61M5/158 ,  A61M2005/1585 ,  G01B15/00

摘要： The embodiment of the present invention provides a position control system having a movement apparatus including an electromagnet capable of applying a magnetic field to a head and a movement control unit; and a position detection apparatus being capable of determining a position of a mark existing on the head or in a tip end side position of a pipe which is attached to the head with a tip end thereof open and through which a liquid can be injected or suctioned via an opening portion in the tip end, the position detection apparatus being capable of detecting a position of the head on the basis of the position of the mark, the movement control unit of the movement apparatus is capable of controlling an advancement direction of the head so that the pipe is inserted substantially linearly into a target position.

摘要翻译： 本发明的实施例提供了一种位置控制系统，其具有包括能够向磁头施加磁场的电磁体和移动控制单元的移动装置; 以及位置检测装置，其能够确定存在于头部的标记的位置或附接到头部的管的前端侧位置，其顶端开口，并且可以通过该顶端喷射或吸引液体 通过前端的开口部，位置检测装置能够根据标记的位置检测头部的位置，移动装置的移动控制单元能够控制头部的前进方向 使得管道基本线性地插入目标位置。

公开(公告)号：US09244342B2

公开(公告)日：2016-01-26

申请号：US12963009

申请日：2010-12-08

申请人： Hiroshi Sato

发明人： Hiroshi Sato

IPC分类号： B29C59/02 ,  G03F7/00 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： An imprint apparatus comprises a scope which observes a mark formed in each shot of a substrate and a mark formed on a mold and a controller. The controller performs observation by the scope, detects an amount of displacement of the shot with respect to the mold based on the observation result, and, if the detected displacement amount falls outside an allowable range, executes at least one of remeasuring a baseline amount and reexecuting a global alignment process.

摘要翻译： 压印装置包括观察在基板的每个镜头中形成的标记的范围和形成在模具上的标记和控制器。 控制器通过该范围进行观察，基于观察结果检测射出相对于模具的位移量，并且如果检测到的位移量超出允许范围，则执行重新测量基线量和 重新执行全局对齐过程。

公开(公告)号：US09239946B2

公开(公告)日：2016-01-19

申请号：US13546355

申请日：2012-07-11

申请人： Kan Torii ,  Masakazu Matsugu ,  Katsuhiko Mori ,  Hiroshi Sato ,  Yusuke Mitarai

发明人： Kan Torii ,  Masakazu Matsugu ,  Katsuhiko Mori ,  Hiroshi Sato ,  Yusuke Mitarai

IPC分类号： G06K9/00 ,  H04N5/232

CPC分类号： G06K9/00234 ,  G06K2209/011 ,  H04N5/23219

摘要： In an image within which a face pattern is detected, when a ratio of a skin color pixel is equal to or smaller than a first threshold value in a first region and a ratio of a skin color pixel is equal to or greater than a second threshold value in a second r region, the vicinity of the first region is determined to be a face candidate position at which the face pattern can exist. Face detection is carried out on the face candidate position. The second region is arranged in a predetermined position relative to the first region.

摘要翻译： 在其中检测到面部图案的图像中，当皮肤颜色像素的比例在第一区域中等于或小于第一阈值并且皮肤颜色像素的比率等于或大于第二阈值时 在第二r区域中，第一区域附近被确定为可以存在脸部图案的面部候选位置。 脸部检测在脸部候选位置进行。 第二区域相对于第一区域布置在预定位置。

公开(公告)号：US08953175B2

公开(公告)日：2015-02-10

申请号：US12966237

申请日：2010-12-13

申请人： Hiroshi Sato

发明人： Hiroshi Sato

IPC分类号： G01B11/14 ,  G01B11/02 ,  G03F9/00 ,  G03F7/00

CPC分类号： G01B11/14 ,  B29C59/002 ,  B29C59/026 ,  B29K2101/00 ,  B29L2009/005 ,  B82Y10/00 ,  B82Y40/00 ,  G01B11/02 ,  G03F7/0002 ,  G03F9/7038 ,  G03F9/7042 ,  G03F9/7049 ,  G03F9/7088

摘要： A detector for detecting a position of a mark comprises: an image sensing device; an optical system which projects the mark onto an image sensing surface of the image sensing device; a pattern located in a position between the image sensing surface and an optical element located closest to a plane on which the mark is to be located, among optical elements forming the optical system, the position being optically conjugated with the plane; and a processor which calculates a position of the mark with respect to one of a position of the pattern and a position already known from the position of the pattern, based on a moire pattern formed on the image sensing surface by the mark and the pattern.

摘要翻译： 用于检测标记位置的检测器包括：图像感测装置; 光学系统，其将标记投射到图像感测装置的图像感测表面上; 在形成光学系统的光学元件中位于图像感测表面和位于最靠近标记所在的平面的光学元件之间的位置的图案，该位置与该平面光学共轭; 以及处理器，其基于通过标记和图案形成在图像感测表面上的莫尔图案，计算相对于图案的位置和从图案的位置已知的位置之一的标记的位置。