公开(公告)号：US5086014A

公开(公告)日：1992-02-04

申请号：US584110

申请日：1990-09-18

申请人： Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi ,  Yuichi Matsui ,  Akimitsu Nakaue

发明人： Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi ,  Yuichi Matsui ,  Akimitsu Nakaue

IPC分类号： H01L21/205 ,  H01L21/04 ,  H01L21/20 ,  H01L21/285 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47 ,  H01L29/862 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28537 ,  H01L29/1602 ,  H01L29/45 ,  H01L29/6603 ,  H01L29/862 ,  Y10S148/14

摘要： A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.

摘要翻译： 使用金刚石膜的肖特基二极管制造方法包括通过使用由CH 4，H 2和B 2 H 6组成的源气体的CVD在低电阻p型Si衬底上形成B掺杂的p型多晶金刚石膜，在其上形成欧姆接触 并且在B掺杂的p型多晶金刚石膜上形成Al，Pt Au，Ti或W的金属电极。 源气体的B / C浓度比大于0.01ppm且小于20ppm。

公开(公告)号：US5173761A

公开(公告)日：1992-12-22

申请号：US646848

申请日：1991-01-28

申请人： David L. Dreifus ,  Kumar Das ,  Koichi Miyata ,  Koji Kobashi

发明人： David L. Dreifus ,  Kumar Das ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： C23C14/06 ,  C30B29/04 ,  H01L21/04 ,  H01L21/205 ,  H01L21/265 ,  H01L29/16 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861

CPC分类号： H01L29/1602 ,  H01L29/6603 ,  H01L29/66045 ,  Y10S257/921

摘要： A method and apparatus for contructing diamond semiconductor structures made of polycrystalline diamond thin films is disclosed. The use of a polycrystalline diamond deposition on a substrate material provides an advantage that any substrate material may be used and the ability to use polycrystalline diamond as a material is brought about through the use of an undoped diamond layer acting as an insulating layer which is formed on a boron-doped layer. Because of the structure, ion implantation can be employed to reduce the ohmic contact resistance. The ion implantation also provides that the entire structure can be made using a deep implant to form a channel layer which allows the insulating gate structure to be formed as an integral part of the device. The buried channel can be doped through the use of several implantation steps through the insulating undoped layer. As a result, the process and device is able to provide active polycrystallline diamond devices which have excellent resistance and reverse voltage characteristics while having an increased temperature capacity and increased range of operational environmental conditions when contrasted with the silicon technology. Furthermore with the disclosed process and devices, there is no requirement for a single crystal diamond substrate.

摘要翻译： 公开了一种用于构造由多晶金刚石薄膜制成的金刚石半导体结构的方法和装置。 在衬底材料上使用多晶金刚石沉积提供了可以使用任何衬底材料的优点，并且通过使用形成绝缘层的未掺杂的金刚石层来形成使用多晶金刚石作为材料的能力 在硼掺杂层上。 由于结构，可以使用离子注入来降低欧姆接触电阻。 离子注入还提供了整个结构可以使用深度注入来形成沟道层，其允许绝缘栅极结构形成为器件的组成部分。 可以通过使用几个注入步骤穿过绝缘未掺杂层来掺杂掩埋沟道。 因此，与硅技术相比，该工艺和器件能够提供具有优异的电阻和反向电压特性的活性多晶金刚石器件，同时具有增加的温度容量和增加的操作环境条件的范围。 此外，通过公开的方法和装置，不需要单晶金刚石基底。

公开(公告)号：US5304461A

公开(公告)日：1994-04-19

申请号：US845790

申请日：1992-03-09

申请人： Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue ,  Kazuo Kumagai ,  Koichi Miyata ,  Koji Kobashi

发明人： Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue ,  Kazuo Kumagai ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： C23C16/04 ,  C23C16/27 ,  G03F7/00 ,  H01L21/20 ,  H01L21/314 ,  G03C5/00

CPC分类号： H01L21/3146 ,  C23C16/04 ,  C23C16/042 ,  C23C16/274 ,  G03F7/00 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642

摘要： Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a substrate by gas phase synthesis. Where a silicon substrate is used, its surface is first abraded to give a surface roughness suitable for gas phase synthesis of diamond. When a basal thin diamond film is used, a coating material capable of withstanding a temperature higher than a substrate temperature required for gas phase synthesis of diamond and having a high etching selectivity to diamond is needed to cover areas other than where the thin diamond film is to be newly formed. When a lift-off method is used, a thin masking film having a melting point higher than a temperature to be employed for gas phase synthesis of diamond can also be used in place of the coating material described above.

摘要翻译： 薄金刚石膜可以通过气相合成成像地选择性地沉积在衬底上。 衬底可以是通过气相合成在衬底上预先形成的硅衬底或基底薄金刚石膜。 在使用硅衬底的情况下，首先对其表面进行研磨，得到适合气相合成金刚石的表面粗糙度。 当使用基底薄金刚石膜时，需要能够承受高于气相合成金刚石所需的衬底温度并且对金刚石具有高蚀刻选择性的涂层材料，以覆盖除了金刚石薄膜之外的区域 新成立。 当使用剥离方法时，也可以使用熔点高于用于气相合成金刚石的温度的薄掩模膜来代替上述涂层材料。

公开(公告)号：US5066938A

公开(公告)日：1991-11-19

申请号：US596068

申请日：1990-10-11

申请人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue

发明人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue

IPC分类号： G01K7/22 ,  H01C7/04 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01C7/041 ,  G01K7/223 ,  H01L2224/48463

摘要： A diamond thin film thermistor having a substrate, an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis, a semiconducting diamond layer as a temperature-sensing part on the electrically insulating diamond layer by vapor-phase synthesis, and metal thin film electrodes attached to the semiconducting diamond layer. A plurality of such diamond thin film thermistors can simultaneously be formed on a single substrate, and the substrate is cut with a dicing saw to provide individual diamond thin film thermistor chips of the same quality.

摘要翻译： 一种金刚石薄膜热敏电阻，其具有基板，通过气相合成在基板上形成的电绝缘金刚石层，通过气相合成在电绝缘金刚石层上的作为感温部分的半导体金刚石层，以及金属薄膜 连接到半导体金刚石层的电极。 多个这样的金刚石薄膜热敏电阻可以同时形成在单个基板上，并且用切割锯切割基板以提供相同质量的单独的金刚石薄膜热敏电阻芯片。

公开(公告)号：US5888846A

公开(公告)日：1999-03-30

申请号：US86561

申请日：1998-05-29

申请人： Koichi Miyata ,  Koji Kobashi ,  Kohei Suzuki ,  Toshihisa Nozawa

发明人： Koichi Miyata ,  Koji Kobashi ,  Kohei Suzuki ,  Toshihisa Nozawa

IPC分类号： C30B29/04 ,  B81C1/00 ,  C30B33/08 ,  H01L21/04 ,  H01L21/00 ,  H01L21/335 ,  H01L21/84

CPC分类号： H01L21/042

摘要： A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.

摘要翻译： 金刚石微制造方法包括以下步骤：在金刚石的表面上形成由硅胶旋涂玻璃材料构成的抗蚀剂层; 其中以给定图案用电子束或离子束照射抗蚀剂层; 显影抗蚀剂层以形成给定的图案; 并通过ECR等离子体蚀刻方法或高频等离子体蚀刻方法蚀刻金刚石。

公开(公告)号：US5353737A

公开(公告)日：1994-10-11

申请号：US46804

申请日：1993-04-16

申请人： Hisashi Koyama ,  Koichi Miyata ,  Koji Kobashi

发明人： Hisashi Koyama ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： H01L21/20 ,  C23C16/27 ,  H01L21/205 ,  C30B29/04

CPC分类号： C23C16/278 ,  C23C16/274 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262

摘要： Disclosed is a method for forming a diamond film on a substrate by vapor-phase synthesis using a reaction gas which contains B.sub.2 H.sub.6 and O.sub.2 with a gas concentration ratio (volume %) of ([B.sub.2 H.sub.6 ]/[O.sub.2 ]).gtoreq.1.times.10.sup.-4 in addition to a hydrocarbon gas in hydrogen. By this invention, it is possible to form p-type semiconducting diamond films having an excellent crystallinity and desired electric characteristics.

摘要翻译： 公开了使用含有（[B2H6] / [O 2]）> / = 1×10 -3的气体浓度比（体积％）的含有B 2 H 6和O 2的反应气体通过气相合成在基板上形成金刚石膜的方法， 4除氢气中的烃气体外。 通过本发明，可以形成具有优异结晶度和所需电特性的p型半导体金刚石膜。

公开(公告)号：US5107315A

公开(公告)日：1992-04-21

申请号：US668172

申请日：1991-03-12

申请人： Kazuo Kumagai ,  Koichi Miyata ,  Shigeaki Miyauchi ,  Yuichi Matsui ,  Koji Kobashi

发明人： Kazuo Kumagai ,  Koichi Miyata ,  Shigeaki Miyauchi ,  Yuichi Matsui ,  Koji Kobashi

IPC分类号： H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L29/786

CPC分类号： H01L29/1602 ,  H01L29/66045 ,  H01L29/78684

摘要： Disclosed herein is a MIS type diamond field-effect transistor comprising a diamond semiconductor layer provided as an active layer by chemical vapor deposition (CVD), and a diamond insulator layer provided on the diamond semiconductor layer also by CVD, a gate electrode being formed on the diamond insulator layer, wherein a diamond insulator undercoat is provided on a non-diamond substrate by CVD, and the diamond semiconductor layer and the diamond insulator layer are sequentially provided on the diamond insulator undercoat. The MIS type diamond field-effect transistor with this structure ensures that in the manufacture thereof, a diamond insulator undercoat of large area can be formed on a non-diamond substrate of CVD, whereby a large number of elemental devices can be fabricated simultaneously.

摘要翻译： 本文公开了一种MIS型金刚石场效应晶体管，其包括通过化学气相沉积（CVD）作为有源层提供的金刚石半导体层，以及还通过CVD设置在金刚石半导体层上的金刚石绝缘体层，栅电极形成在 金刚石绝缘体层，其中通过CVD在非金刚石基底上提供金刚石绝缘体底涂层，并且金刚石半导体层和金刚石绝缘体层依次设置在金刚石绝缘体底涂层上。 具有这种结构的MIS型金刚石场效应晶体管确保了在其制造中可以在CVD的非金刚石衬底上形成大面积的金刚石绝缘体底涂层，从而可以同时制造大量的元件。

公开(公告)号：US5612548A

公开(公告)日：1997-03-18

申请号：US598618

申请日：1996-02-12

申请人： Kimitsugu Saito ,  Koichi Miyata

发明人： Kimitsugu Saito ,  Koichi Miyata

IPC分类号： C30B29/04 ,  H01L33/00 ,  H01L33/02 ,  H01L33/34 ,  H01L33/42 ,  H01L33/44 ,  H01L31/0312

CPC分类号： H01L33/0054 ,  H01L33/025 ,  H01L33/34 ,  H01L33/44

摘要： A diamond light-emitting element capable of intense light emission at low operation voltage. A conductive substrate is disposed on a metallic plate such as copper to form an ohmic contact. A first diamond layer is formed on the conductive substrate. The boron atom concentration in the first diamond layer is 10.sup.19 cm.sup.-3 or higher. A second diamond layer is formed on the first diamond layer. The second diamond layer has a crystal defect density of 10.sup.11 cm.sup.-2 or higher. A second electrode is formed on the second diamond layer. A power supply is connected to the second electrode and the copper plate. When voltage is applied, holes in the first diamond layer recombine with electrons from the second electrode, and hence light emission takes place. The defect levels in the second diamond layer form the recombination centers to achieve high brightness at low operation voltage.

摘要翻译： 能够在低工作电压下强烈发光的金刚石发光元件。 导电基板设置在诸如铜的金属板上以形成欧姆接触。 在导电基板上形成第一金刚石层。 第一金刚石层中的硼原子浓度为1019cm -3以上。 在第一金刚石层上形成第二金刚石层。 第二金刚石层的晶体缺陷密度为1011cm -2以上。 在第二金刚石层上形成第二电极。 电源连接到第二电极和铜板。 当施加电压时，第一金刚石层中的空穴与来自第二电极的电子复合，因此发生发光。 第二金刚石层中的缺陷水平形成复合中心，以在低操作电压下实现高亮度。

公开(公告)号：US5427054A

公开(公告)日：1995-06-27

申请号：US254762

申请日：1994-06-06

申请人： Kimitsugu Saito ,  Koichi Miyata

发明人： Kimitsugu Saito ,  Koichi Miyata

IPC分类号： C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  H01L21/205

CPC分类号： C23C16/274 ,  C23C16/277 ,  C23C16/278 ,  C30B25/02 ,  C30B29/04

摘要： A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.

摘要翻译： 形成高品质金刚石膜的方法，其中非金刚石组分和晶体缺陷显着降低。 通过使用源气体的气相合成在金刚石基板上形成金刚石膜，其中源气体中的氧和碳[0]和[C]的原子浓度分别满足0.01≤ C] /（[C] + [O]）

公开(公告)号：US5512873A

公开(公告)日：1996-04-30

申请号：US258608

申请日：1994-06-10

申请人： Kimitsugu Saito ,  Koichi Miyata ,  John P. Bade, Jr. ,  Brian R. Stoner ,  Jesko A. von Windheim ,  Scott R. Sahaida

发明人： Kimitsugu Saito ,  Koichi Miyata ,  John P. Bade, Jr. ,  Brian R. Stoner ,  Jesko A. von Windheim ,  Scott R. Sahaida

IPC分类号： G01K7/22 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C23C16/511 ,  C30B29/04 ,  H01C7/02 ,  H01C7/04 ,  H01C7/10

CPC分类号： H01C7/028

摘要： The highly-oriented diamond film thermistor has a temperature sensing part formed of a highly-oriented diamond film grown by chemical vapor deposition. This highly-oriented diamond film satisfies the conditions that at least 65% of the film surface area is covered by (100) or (111) planes of diamond and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy conditions, .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree., between adjacent crystal planes.

摘要翻译： 高取向金刚石膜热敏电阻具有由通过化学气相沉积生长的高取向金刚石膜形成的温度感测部。 这种高度取向的金刚石膜满足以下条件：至少65％的膜表面积被金刚石的（100）或（111）平面覆盖，并且欧拉角{α的差异{DELTAα，DELTAβ，DELTAγ} ，β，γ}，它们代表晶面的取向，同时满足条件 DELTA alpha |