摘要:
There is provided a semiconductor processing apparatus comprising a processing tube for housing a substrate support member that supports a plurality of substrates stacked at a prescribed pitch in a vertical direction; a gas supply part that extends in a direction in which the substrates are stacked in the processing tube and that has a plurality of gas supply openings; an exhaust part that opens onto the processing tube; a gas rectifying plate that is disposed in a space between a penumbra of the substrates supported on the substrate support member and an inner wall of the processing tube, and that extends from the gas supply part in a circumferential direction of the processing tube and in the direction in which the substrates are stacked; and a gas flow regulating part disposed in a space in the processing tube that is above a top-most gas supply opening and a top-most substrate and in a space in the processing tube that is below a bottom-most substrate and a bottom-most gas supply opening. A thin film formed on the substrate can be made more uniform.
摘要:
A work is installed on a table of a machine tool, and the coordinate system on the work is (X′, Y′, Z′). Each three points on respective three faces of the work, which are orthogonal to one another, A, B, C, D, E, F, G, H and I, are detected with a touch probe. From three points on the same plane, each of three formulas of planes which lies on the three points, respectively, are obtained. A position O′ (XO, YO, ZO) of a point where the three plane intersect with one another is obtained. This position is a parallel translation error. From these three plane formulas, points on the X′, Y′ and Z′ axes each being distant from the position O′ by the length L are obtained. Rotation matrices are obtained from the respective points, position O′ (XO, YO, ZO), and L. Rotary direction errors are obtained using the rotation matrices. In this manner, a work location error which is composed of the three-dimensional parallel translation error and three-dimensional rotary direction errors is obtained.
摘要翻译:工件安装在机床的工作台上,工件上的坐标系为(X',Y',Z')。 A,B,C,D,E,F,G,H和I彼此正交的工件的相应三个面上的每个三个点都用探针检测。 从同一平面上的三个点,分别得到位于三个点上的三个平面的三个公式。 获得三个平面彼此相交的点的位置O'(X O,O,Y O,Z O O)。 这个位置是平行翻译错误。 通过这三个平面公式,可以得到X',Y',Z'各自远离位置O'长度L的点。 旋转矩阵从相应的位置获得,位置O'(X O,O,O,Z O O)和L.旋转方向误差 使用旋转矩阵获得。 以这种方式,获得由三维平行平移平移误差和三维旋转方向误差构成的作业位置误差。
摘要:
A door locking device for a microwave oven of the present invention has a latch disposed on the rear surface of a door and pivoted clockwise by the urging force of a spring, and an engaging portion which stops a hook at the distal end of the latch. Upon closing operation of the door, the hook engages with the engaging portion to lock the door. For opening the door, a lock release actuator is moved upward to pivot the latch upward to release the locking state of the latch with the engaging portion.
摘要:
A three-dimensional shaping apparatus includes: a supplying unit configured to supply powder to a storage unit to form a layer of the powder; a discharging unit configured to discharge shaping liquid to solidify the powder onto the powder; and a controlling unit configured to generate a control signal for controlling the supplying unit and the discharging unit based on shaping data indicating a shape of a three-dimensional shaped object. The controlling unit is configured to generate the control signal for laminating at least one sacrificial layer separable from at least one shaping layer corresponding to the three-dimensional shaped object in such a position that the at least one sacrificial layer is under the at least one shaping layer, based on the shaping data and powder information stored in advance and indicating change in thickness of a layer of the powder caused by permeation of the shaping liquid.
摘要:
A control apparatus controls a three-dimensional object fabrication apparatus including a storing unit configured to store therein powder, a supplying unit configured to supply the powder to the storing unit in layers, and a discharge unit configured to discharge, onto the powder, a fabrication liquid for solidifying the powder. The control apparatus includes a controller configured to control a total amount of the powder supplied from the supplying unit to the storing unit based on fabrication data indicating a shape of a three-dimensional object and powder information indicating a change in dimension of a layer of the powder due to permeation of the fabrication liquid.
摘要:
When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.
摘要:
A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.
摘要:
A numerical controller for controlling a multi-axis machine calculates an axis-dependent translation error amount and an axis-dependent rotation error amount based on a command axis position. Translation and rotation compensation amounts are calculated based on the axis dependent translation and rotation error amounts, respectively. The translation and rotation compensation amounts are added to command linear and rotary axis positions, respectively. Three linear axes and three rotary axes are driven to the added positions, individually. Thus, there is provided a numerical controller that enables even machining with a side face of a tool or boring to be in commanded tool position and posture (orientation) in the multi-axis machine.
摘要:
A liquid dispenser head includes nozzles, pressure chambers, an energy generator, a shared chamber, a vibration member, and a specific wall portion. The nozzles discharge liquid. Each of the pressure chambers communicates with a corresponding one of the nozzles. The energy generator, provided for each of the pressure chambers, generates energy for pressurizing liquid in the pressure chamber. The shared chamber supplies liquid to the pressure chambers. The vibration member, forming a wall of each one of the pressure chambers, includes an energy-transmitting area configured to transmit the energy generated by the energy generator to each one of the pressure chambers. The specific wall portion, constituting at least a part of the same wall, or a different wall, of each of the pressure chambers, has a structural compliance set greater than a compression compliance of liquid in the pressure chamber.
摘要:
An image forming apparatus including a liquid discharge head unit which in turn includes (a) a liquid discharge head including multiple liquid chambers connected to multiple nozzles for discharging liquid droplets, and a common liquid chamber including a liquid supply opening and a liquid discharge opening, to supply a liquid to the multiple liquid chambers, (b) a sub tank including a liquid container, connected to the liquid supply opening to store the liquid to be supplied to the liquid discharge head, (c) a tank connected to the liquid discharge opening to store the liquid used for filling the liquid discharge head, and (d) a mechanism to return the liquid in the tank to the sub tank.