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    Low-k damage repair and pore sealing agents with photosensitive end groups
    11.
    发明授权
    Low-k damage repair and pore sealing agents with photosensitive end groups 有权
    低k损伤修复和孔密封剂与光敏端基

    公开(公告)号：US09502255B2

    公开(公告)日：2016-11-22

    申请号：US14517732

    申请日：2014-10-17

    Applicant: Lam Research Corporation

    Inventor： George Andrew Antonelli ,  Andrew John McKerrow

    IPC: H01L21/268 ,  H01L21/3105 ,  H01L21/67

    CPC classification number: H01L21/2686 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

    Abstract: Methods of repairing damaged low-k dielectric films using UV-activated photosensitive organic compounds are described herein. Methods of sealing pores by exposing porous dielectric films to UV-activated large photosensitive organic compounds are also described. Methods also include mechanically reinforcing dielectric films using photosensitive organic compounds activated by UV radiation. Compounds include at least one photosensitive end group, such as an unsaturated bond or group with high ring strain.

    Abstract translation: 本文描述了使用UV活化的光敏有机化合物修复损坏的低k电介质膜的方法。 还描述了通过将多孔介电膜暴露于UV活化的大光敏有机化合物来密封孔的方法。 方法还包括使用由UV辐射激活的光敏有机化合物机械地增强介电膜。 化合物包括至少一个光敏端基，例如具有高环稠度的不饱和键或基团。

    LOW-K DAMAGE REPAIR AND PORE SEALING AGENTS WITH PHOTOSENSITIVE END GROUPS
    12.
    发明申请
    LOW-K DAMAGE REPAIR AND PORE SEALING AGENTS WITH PHOTOSENSITIVE END GROUPS 有权
    LOW-K损伤修复和具有感光端基的孔密封剂

    公开(公告)号：US20160111288A1

    公开(公告)日：2016-04-21

    申请号：US14517732

    申请日：2014-10-17

    Applicant: Lam Research Corporation

    Inventor： George Andrew Antonelli ,  Andrew John McKerrow

    IPC: H01L21/268 ,  H01L21/3105

    CPC classification number: H01L21/2686 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

    Abstract: Methods of repairing damaged low-k dielectric films using UV-activated photosensitive organic compounds are described herein. Methods of sealing pores by exposing porous dielectric films to UV-activated large photosensitive organic compounds are also described. Methods also include mechanically reinforcing dielectric films using photosensitive organic compounds activated by UV radiation. Compounds include at least one photosensitive end group, such as an unsaturated bond or group with high ring strain.

    Abstract translation: 本文描述了使用UV活化的光敏有机化合物修复损坏的低k电介质膜的方法。 还描述了通过将多孔介电膜暴露于UV活化的大光敏有机化合物来密封孔的方法。 方法还包括使用由UV辐射激活的光敏有机化合物机械地增强介电膜。 化合物包括至少一个光敏端基，例如具有高环稠度的不饱和键或基团。

    TRANSFORMER COUPLED PLASMA SOURCE DESIGN FOR THIN DIELECTRIC FILM DEPOSITION
    13.
    发明申请
    TRANSFORMER COUPLED PLASMA SOURCE DESIGN FOR THIN DIELECTRIC FILM DEPOSITION 有权

    公开(公告)号：US20250132127A1

    公开(公告)日：2025-04-24

    申请号：US18681489

    申请日：2022-08-05

    Applicant: Lam Research Corporation

    Inventor： Tongtong Guo ,  Rachel E. Batzer ,  Lee Chen ,  Francisco J. Juarez ,  Andrew John McKerrow ,  Bo Gong ,  Malak Khojasteh ,  Zhe Gui ,  Huatan Qiu

    IPC: H01J37/32

    Abstract: An apparatus, comprising: a process chamber, wherein the process chamber comprises: a window, wherein the window comprises a dielectric material that is transmissive to radio frequency (RF) energy, wherein the window has a first side and a second side opposite the first side; a collar assembly having an aperture covered by the window, wherein the collar assembly supports the first side of the window; and one or more RF coils positioned above the second side of the window, wherein, when viewed along a first axis perpendicular to the window, a radial distance between an outermost portion of the one or more RF coils and an innermost portion of an electrically conductive portion of the collar assembly that intersects with a first reference plane that is perpendicular to the first axis and between the first side of the window and the one or more RF coils is greater than or equal to 40 mm.

    Methods and apparatus for depositing silicon oxide on metal layers
    17.
    发明授权
    Methods and apparatus for depositing silicon oxide on metal layers 有权

    公开(公告)号：US10319582B2

    公开(公告)日：2019-06-11

    申请号：US15499318

    申请日：2017-04-27

    Applicant: Lam Research Corporation

    Inventor： Bhadri N. Varadarajan ,  Zhe Gui ,  Bo Gong ,  Andrew John McKerrow

    IPC: H01L21/02 ,  H01L21/027

    Abstract: Thin layer of silicon oxide is deposited on a substrate having an exposed layer of metal (e.g., W, Cu, Ti, Co, Ta) without causing substantial oxidation of the metal. The method involves: (a) contacting the substrate having an exposed metal layer with a silicon-containing precursor and adsorbing the precursor on the substrate; (b) removing the unadsorbed precursor from a process chamber; and (c) contacting the adsorbed precursor with a plasma formed in a process gas comprising an oxygen source (e.g., O2, CO2, N2O, O3) and H2, to form silicon oxide from the silicon-containing precursor while suppressing metal oxidation. These steps can be repeated until a silicon oxide film of a desired thickness is formed. In some embodiments, the silicon oxide film is used to improve nucleation of subsequently deposited silicon carbide.

    METHODS AND APPARATUS FOR DEPOSITING SILICON OXIDE ON METAL LAYERS
    18.
    发明申请
    METHODS AND APPARATUS FOR DEPOSITING SILICON OXIDE ON METAL LAYERS 审中-公开

    公开(公告)号：US20180315597A1

    公开(公告)日：2018-11-01

    申请号：US15499318

    申请日：2017-04-27

    Applicant: Lam Research Corporation

    Inventor： Bhadri N. Varadarajan ,  Zhe Gui ,  Bo Gong ,  Andrew John McKerrow

    IPC: H01L21/02 ,  H01L21/027

    CPC classification number: H01L21/02167 ,  H01L21/02068 ,  H01L21/02164 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/0274

    Abstract: Thin layer of silicon oxide is deposited on a substrate having an exposed layer of metal (e.g., W, Cu, Ti, Co, Ta) without causing substantial oxidation of the metal. The method involves: (a) contacting the substrate having an exposed metal layer with a silicon-containing precursor and adsorbing the precursor on the substrate; (b) removing the unadsorbed precursor from a process chamber; and (c) contacting the adsorbed precursor with a plasma formed in a process gas comprising an oxygen source (e.g., O2, CO2, N2O, O3) and H2, to form silicon oxide from the silicon-containing precursor while suppressing metal oxidation. These steps can be repeated until a silicon oxide film of a desired thickness is formed. In some embodiments, the silicon oxide film is used to improve nucleation of subsequently deposited silicon carbide.

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