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公开(公告)号：US20150263188A1
公开(公告)日：2015-09-17
申请号：US14720527
申请日：2015-05-22
Applicant: LG ELECTRONICS INC.
Inventor： Wonseok CHOI , Kwangsun JI , Heonmin LEE , Hojung SYN , Junghoon CHOI , Hyunjin YANG
IPC: H01L31/0216 , H01L31/0224
CPC classification number: H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022441 , H01L31/02366 , H01L31/0288 , H01L31/03529 , H01L31/0368 , H01L31/0376 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0747 , H01L31/1804 , Y02E10/547
Abstract: A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode directly formed on a second field region, wherein a second passivation layer comprises a first back passivation portion and a second back passivation portion. Furthermore, the first back passivation portion is merely positioned between the emitter region and the substrate and the second field region and the substrate, and the second back passivation portion is positioned between the emitter region and the second field region, and wherein the first back passivation portion positioned between the emitter region and the substrate is physically separated from first back passivation portion positioned between the second field region and the substrate.
Abstract translation: 讨论了太阳能电池，并且包括基板; 第一场地; 直接形成在发射极区域上的第一电极; 以及直接形成在第二场区上的第二电极，其中第二钝化层包括第一后钝化部分和第二后钝化部分。 此外，第一背面钝化部分仅位于发射极区域和衬底之间，并且第二场区域和衬底之间，并且第二背部钝化部分位于发射极区域和第二场区域之间，并且其中第一背面钝化部分 位于发射极区域和衬底之间的部分与位于第二场区域和衬底之间的第一背面钝化部分物理分离。
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12.发明申请公开(公告)号：US20150132598A1
公开(公告)日：2015-05-14
申请号：US14533295
申请日：2014-11-05
Applicant: LG Electronics Inc.
Inventor： Wonseok CHOI , Taihun LIM , Seonkyu KIM , Bonghyang KIM
CPC classification number: G03F7/0002 , C25F3/16 , C25F3/20 , C25F3/24 , C25F7/00 , F25D23/02 , F25D2323/02 , F25D2400/18 , Y10T428/12389
Abstract: Manufacturing an exterior decor panel for a home appliance includes laminating a photosensitive dry film on a front surface of a metal sheet, the photosensitive dry film having a higher etch resistance than the metal sheet against an electrolytic solution, photo-masking the photosensitive dry film attached to the metal sheet to create a pattern having a minimum width of 0.1 mm in the photosensitive dry film to thereby expose the front surface of the metal sheet corresponding to the pattern in the photosensitive film, electrolytic-polishing the photo-masked metal sheet by dipping the photo-masked metal sheet in an electrolytic bath to allow the electrolytic solution to contact the exposed front surface of the metal sheet and form the pattern in the front surface of the metal sheet, and performing post-treatment on the metal sheet, the post-treatment including washing and removing the photosensitive dry film.
Abstract translation: 制造用于家用电器的外部装饰面板包括在金属片的前表面上层压光敏干膜，所述感光干膜比金属片具有比电解液更高的耐蚀刻性，对所附的感光干膜进行光掩蔽 在金属片上形成在感光性干膜中具有0.1mm的最小宽度的图案，从而使与感光膜中的图案对应的金属片的前表面露出，通过浸渍电解抛光光掩模金属片 所述光电金属片在电解浴中使电解液与金属片的暴露的前表面接触并在金属片的前表面形成图案，并在金属片上进行后处理，柱 处理，包括洗涤和去除感光干膜。
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公开(公告)号：US20240387492A1
公开(公告)日：2024-11-21
申请号：US18692576
申请日：2021-09-17
Applicant: LG ELECTRONICS INC.
Inventor： Dohan KIM , Wonseok CHOI , Wonjae CHANG , Jinsung KIM
Abstract: The display device can include a substrate; a barrier rib disposed on the substrate and having an assembly hole; a semiconductor light emitting device in the assembly hole; and an adhesive part between the substrate and the semiconductor light emitting device within the assembly hole. The adhesive part can include adhesive particles in contact with each other.
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14.发明申请公开(公告)号：US20240387490A1
公开(公告)日：2024-11-21
申请号：US18443406
申请日：2024-02-16
Applicant: LG ELECTRONICS INC.
Inventor： Byoungkwon CHO , Hongcheol LEE , Wonseok CHOI
Abstract: The present disclosure is applicable to a display device-related technology field, for example, relates to a display device using a micro light emitting diode (LED) and a method for manufacturing the same. The display device using the semiconductor light emitting device includes a wiring substrate with a first electrode disposed thereon, a light emitting device disposed on the wiring substrate to constitute a unit sub-pixel, a seating layer located between the wiring substrate and the light emitting device, wherein the seating layer includes a first portion in contact with the light emitting device and a second portion located under the first portion and having an area size greater than an area size of the first portion, a first connection electrode electrically connecting the first electrode to one side of the light emitting device corresponding to a shape of the seating layer, a planarization layer covering the light emitting device and the first connection electrode, and a second connection electrode located on the planarization layer and electrically connected to the other side of the light emitting device.
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公开(公告)号：US20240355788A1
公开(公告)日：2024-10-24
申请号：US18685475
申请日：2021-08-26
Applicant: LG ELECTRONICS INC.
Inventor： Sungmin PARK , Byoungkwon CHO , Wonseok CHOI
IPC: H01L25/075 , H01L33/22 , H01L33/44 , H01L33/62
CPC classification number: H01L25/0753 , H01L33/22 , H01L33/44 , H01L33/62
Abstract: A semiconductor light emitting device includes a light emitting part, a first electrode including a bonding layer below the light emitting part, a barrier around the bonding layer, a second electrode on the light emitting part, and a passivation layer to surround the light emitting part and the second electrode.
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Patent Agency Ranking
公开(公告)号：US20240186473A1
公开(公告)日：2024-06-06
申请号：US18285192
申请日：2022-03-31
Applicant: LG DISPLAY CO., LTD. , LG ELECTRONICS INC.
Inventor： Hyeseon EOM , Doohyun YOON , Moonsun LEE , Wonseok CHOI
CPC classification number: H01L33/62 , H01L25/167 , H01L27/124
Abstract: A display device including a semiconductor light emitting device according to an embodiment includes a substrate, first assembly wiring and second assembly wiring alternately arranged on the substrate and spaced apart from each other, a planarization layer disposed on the first assembly wiring and the second assembly wiring and having a first opening, a semiconductor light emitting device disposed inside the first opening and having a first electrode overlapping the first assembled wiring and the second assembled wiring, and an assembly wiring connection pattern that electrically connects the first assembly wiring and the second assembly wiring. And first electrode can be electrically connected to one of the first assembly wiring and the second assembly wiring.
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17.发明申请公开(公告)号：US20230135290A1
公开(公告)日：2023-05-04
申请号：US17798798
申请日：2020-03-23
Applicant: LG ELECTRONICS INC.
Inventor： Wonseok CHOI , Soohyun KIM , Sungmin PARK
Abstract: Discussed is a display device that can include a base unit, a data wire and a gate wire arranged in columns and rows, respectively, and on the base unit to intersect each other, a power wire extending in a same direction as the data wire, thin film transistors connected to the data wire and the gate wire, and a semiconductor light-emitting diode electrically connected to the thin film transistors. A pair of residual assembly electrodes overlapping the semiconductor light-emitting diode are also provided.
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公开(公告)号：US20180309017A1
公开(公告)日：2018-10-25
申请号：US15959974
申请日：2018-04-23
Applicant: LG ELECTRONICS INC.
Inventor： Wonseok CHOI , Gunho KIM
IPC: H01L31/18 , H01L31/068 , H01L31/0735 , H01L31/0687 , H01L31/0304
CPC classification number: H01L31/1844 , H01L31/03042 , H01L31/03046 , H01L31/068 , H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , Y02E10/544 , Y02P70/521
Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell according to an embodiment of the invention. The method of manufacturing the compound semiconductor solar cell according to the embodiment of the invention includes forming a plurality of compound semiconductor layers of at least two elements and including a base layer and an emitter layer, the base layer including a first conductivity type dopant to have a first conductivity type and the emitter layer including a second conductivity type dopant to have a second conductivity type. The forming of the plurality of compound semiconductor layers includes at least one of a process-temperature change period and a growth-rate change period.
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公开(公告)号：US20180248059A1
公开(公告)日：2018-08-30
申请号：US15904019
申请日：2018-02-23
Applicant: LG ELECTRONICS INC.
Inventor： Soohyun KIM , Gunho KIM , Hyun LEE , Wonseok CHOI , Younho HEO
IPC: H01L31/0352 , H01L31/0224 , H01L31/18 , H01L31/0735
CPC classification number: H01L31/035281 , H01L31/022425 , H01L31/0735 , H01L31/184 , H01L31/1844 , H01L31/186 , H01L31/1892 , Y02E10/544 , Y02P70/521
Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.
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20.发明公开公开(公告)号：US20240266329A1
公开(公告)日：2024-08-08
申请号：US18580914
申请日：2021-07-22
Applicant: LG ELECTRONICS INC.
Inventor： Junoh SHIN , Byoungkwon CHO , Wonseok CHOI , Jeonghyo KWON
IPC: H01L25/075 , H01L33/00 , H01L33/38 , H01L33/44
CPC classification number: H01L25/0753 , H01L33/0093 , H01L33/38 , H01L33/44 , H01L2224/95133 , H01L2933/0016
Abstract: The present disclosure is applicable to a technical field related to display devices, and relates to a display device using, for example, a micro light emitting diode (LED), and a manufacturing method therefor. The present disclosure may comprise: a substrate; a partition defining a unit pixel region; a first electrode located in the unit pixel region; a semiconductor light-emitting element electrically connecting a first-type electrode to the first electrode and provided in the unit pixel region; an inclined a layer formed on the semiconductor light-emitting element and the partition, and having a high incline on the semiconductor light-emitting element; and a second electrode electrically connected, on the inclined coating layer, to a second-type electrode of the semiconductor light-emitting element.
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