COMPLIANT MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES
    11.
    发明申请
    COMPLIANT MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES 有权
    具有金属电极的合适的微型器件传输头阵列

    公开(公告)号:US20140159324A1

    公开(公告)日:2014-06-12

    申请号:US13710442

    申请日:2012-12-10

    CPC classification number: H02N13/00 B81C99/002 Y10T279/23

    Abstract: Compliant monopolar and bipolar micro device transfer head arrays and methods of formation from SOI substrates are described. In an embodiment, an array of compliant transfer heads are formed over a base substrate and deflectable toward the base substrate, and a patterned metal layer includes a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads.

    Abstract translation: 描述了合适的单极和双极微器件转移头阵列和从SOI衬底形成的方法。 在一个实施例中,柔性传送头阵列形成在基底基板上并且可朝向基底基板偏转,并且图案化金属层包括金属互连层,金属互连层与柔性传送头阵列中的金属电极阵列电连接。

    COMPLIANT MONOPOLOAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    13.
    发明申请
    COMPLIANT MONOPOLOAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 有权
    合适的单极微型器件传输头与硅电极

    公开(公告)号:US20140008813A1

    公开(公告)日:2014-01-09

    申请号:US13828117

    申请日:2013-03-14

    Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中,微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构,并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

    COMPLIANT ELECTROSTATIC TRANSFER HEAD WITH SPRING SUPPORT LAYER
    17.
    发明申请
    COMPLIANT ELECTROSTATIC TRANSFER HEAD WITH SPRING SUPPORT LAYER 有权
    具有弹簧支撑层的合适的静电转印头

    公开(公告)号:US20150364424A1

    公开(公告)日:2015-12-17

    申请号:US14307325

    申请日:2014-06-17

    Abstract: A compliant electrostatic transfer head and method of forming a compliant electrostatic transfer head are described. In an embodiment, a compliant electrostatic transfer head includes a cavity in a base substrate, a spring support layer on the base substrate, and a patterned device layer on the spring support layer. The spring support layer includes a spring support layer beam profile that extends over and is deflectable toward the cavity, and the patterned device layer includes an electrode beam profile that is supported by the spring support layer beam profile and extends over and is deflectable toward the cavity.

    Abstract translation: 描述了柔性静电转印头和形成顺应性静电转印头的方法。 在一个实施例中,顺应性静电转印头包括基底衬底中的空腔,在基底衬底上的弹簧支撑层,以及弹簧支撑层上的图案化器件层。 弹簧支撑层包括弹簧支撑层梁轮廓,该弹性支撑层梁型材向空腔延伸并且可偏转,并且图案化的装置层包括由弹簧支撑层梁轮廓支撑并且朝向腔体可偏转的电极梁轮廓 。

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