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公开(公告)号：US20210313948A1
公开(公告)日：2021-10-07
申请号：US17348533
申请日：2021-06-15
发明人： Karl Leeser , Sunil Kapoor , Bradford J. Lyndaker
摘要： A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.
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公开(公告)号：US10832936B2
公开(公告)日：2020-11-10
申请号：US15220926
申请日：2016-07-27
发明人： Peter Woytowitz , Vincent Burkhart , Michael Rumer , Karl Leeser
IPC分类号： C23C16/458 , C23C16/505 , H01L21/687 , H01L21/683 , H01J37/32
摘要： A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that contacts and supports the substrate. Areal density of the mesas monotonically increases as a radial distance from a center of the substrate support increases.
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13.发明申请公开(公告)号：US20200335304A1
公开(公告)日：2020-10-22
申请号：US16866065
申请日：2020-05-04
发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
IPC分类号： H01J37/32 , C23C16/505 , C23C16/455 , C23C16/40 , C23C16/34 , C23C16/509
摘要： A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.
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14.发明授权公开(公告)号：US10665429B2
公开(公告)日：2020-05-26
申请号：US15703213
申请日：2017-09-13
发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
IPC分类号： C23C16/50 , H01J37/32 , C23C16/505 , C23C16/455 , C23C16/40 , C23C16/34 , C23C16/509
摘要： A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.
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公开(公告)号：US10515783B2
公开(公告)日：2019-12-24
申请号：US15051594
申请日：2016-02-23
发明人： Karl Leeser
IPC分类号： H01J37/32 , C23C14/22 , C23C16/455 , H01L21/67
摘要： A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.
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公开(公告)号：US20180331669A1
公开(公告)日：2018-11-15
申请号：US16036491
申请日：2018-07-16
发明人： Sunil Kapoor , Aaron Logan , Hyungjoon Kim , Yaswanth Rangineni , Karl Leeser
CPC分类号： H03H1/0007 , H02M1/44
摘要： A mutually induced filter for filtering radio frequency (RF) power from signals supplied to a load is described. The mutually induced filter includes a first portion connected to a first load element of the load for filtering RF power from one of the signals supplied to the first load element. The load is associated with a pedestal of a plasma chamber. The mutually induced filter further includes a second portion connected to a second load element of the load for filtering RF power from another one of the signals supplied to the second load element. The first and second portions are twisted with each other to be mutually coupled with each other to further facilitate a coupling of a resonant frequency associated with the first portion to the second portion.
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公开(公告)号：US20180122633A1
公开(公告)日：2018-05-03
申请号：US15343159
申请日：2016-11-03
发明人： Karl Leeser
IPC分类号： H01L21/02 , H01L21/687 , H01L21/683 , C23C16/50 , C23C16/458 , C23C16/52
CPC分类号： H01L21/02274 , C23C16/458 , C23C16/4583 , C23C16/50 , C23C16/505 , C23C16/52 , H01L21/6831 , H01L21/6833 , H01L21/68721 , H01L21/68735 , H01L21/68742 , H01L21/6875 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. A retaining feature of the carrier plate is defined at an outer edge of the pocket. A tapered portion of the carrier plate extends from the retaining feature to an outer diameter. The tapered portion is configured to receive a focus ring. A bottom surface of the carrier plate is configured to sit over a pedestal that is used in a process chamber. A plurality of wafer supports is disposed on a top surface of the substrate support region to support the wafer, when received.
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公开(公告)号：US09920844B2
公开(公告)日：2018-03-20
申请号：US14805807
申请日：2015-07-22
发明人： Karl Leeser , Saangrut Sangplung , Shankar Swaminathan , Frank Pasquale , Chloe Baldasseroni , Ted Minshall , Adrien LaVoie
CPC分类号： F16K7/17 , B08B9/0328 , F16K7/123 , F16K7/14 , F16K7/16 , F16K7/20 , F16K27/003 , F16K27/0236 , Y10T137/87249 , Y10T137/87788 , Y10T137/87877 , Y10T137/87885 , Y10T137/87917
摘要： A gas delivery system for a substrate processing system includes first and second valves, a first gas channel, and a cylinder. The first valve includes a first inlet and a first outlet. The first outlet is in fluid communication with a processing chamber of the substrate processing system. The second valve includes a second inlet and a second outlet. The cylinder defines a second gas channel having a first end and a second end. The cylinder is at least partially disposed within the first gas channel such that the cylinder and the first gas channel collectively define a flow channel. The flow channel is in fluid communication with the first end of the second gas channel and with the first inlet. A third gas channel is in fluid communication with the second end of the second gas channel and with the second inlet.
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19.发明授权公开(公告)号：US09793096B2
公开(公告)日：2017-10-17
申请号：US14668174
申请日：2015-03-25
发明人： Hu Kang , Adrien LaVoie , Shankar Swaminathan , Jun Qian , Chloe Baldasseroni , Frank Pasquale , Andrew Duvall , Ted Minshall , Jennifer Petraglia , Karl Leeser , David Smith , Sesha Varadarajan , Edward Augustyniak , Douglas Keil
IPC分类号： H01J37/32 , C23C16/505 , C23C16/455 , C23C16/40 , C23C16/34
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/402 , C23C16/405 , C23C16/45565 , C23C16/505 , C23C16/509 , H01J37/32568 , H01J37/32623
摘要： A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.
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公开(公告)号：US20170117869A1
公开(公告)日：2017-04-27
申请号：US14923329
申请日：2015-10-26
发明人： Karl Leeser , Sunil Kapoor , Bradford J. Lyndaker
CPC分类号： H03H7/38 , H01J37/32183
摘要： A matching module includes an input terminal connected to an input node, a variable load capacitor, and a plurality of RF signal delivery branches. The input terminal is connected to receive RF signals from one or more RF generators. The load capacitor is connected between the input node and a reference ground potential. Each of the plurality of RF signal delivery branches has a respective ingress terminal connected to the input node and a respective egress terminal connected to a respective one of a plurality of output terminals. Each of the plurality of output terminals of the matching module is connected to deliver RF signals to a different one of a plurality of plasma processing stations/chambers. Each of the plurality of RF signal delivery branches includes a corresponding inductor and a corresponding variable tuning capacitor electrically connected in a serial manner between its ingress terminal and its egress terminal.
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