公开(公告)号：US20180122685A1

公开(公告)日：2018-05-03

申请号：US15431088

申请日：2017-02-13

Applicant: Lam Research Corporation

Inventor： Patrick Breiling ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Paul Konkola ,  Adrien LaVoie ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  lshtak Karim ,  Yukinori Sakiyama ,  Edmund Minshall ,  Sung Je Kim ,  Andrew Duvall ,  Frank Pasquale

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/68785 ,  H01J37/32082 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

公开(公告)号：US09852901B2

公开(公告)日：2017-12-26

申请号：US15255337

申请日：2016-09-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien Lavoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

公开(公告)号：US20160340782A1

公开(公告)日：2016-11-24

申请号：US14850816

申请日：2015-09-10

Applicant: Lam Research Corporation

Inventor： Ramesh Chandrasekharan ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Hu Kang ,  Adrien LaVoie ,  Edward Augustyniak ,  Yukinori Sakiyama ,  Chloe Baldasseroni ,  Seshasayee Varadarajan ,  Basha Sajjad ,  Jennifer L. Petraglia

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/3244

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

Abstract translation: 半导体处理装置中的喷头可以包括构造成改善原子层沉积期间的流动均匀性的面板通孔。 喷头可以包括具有用于将气体分散到基板上的多个通孔的面板，其中面板包括小直径的通孔。 例如，每个通孔的直径可以小于约0.04英寸。 另外或在替代方案中，喷头可以包括沿着圆周定位的直径大于被处理的基板的直径的直径的边缘通孔。 淋浴头可以是低容量的喷头，并且可以包括邻近一个或多个气体入口的挡板，其与喷淋头的增压室容积连通。 具有小直径通孔和/或边缘通孔的面板可以改善整体膜不均匀性，改善基板边缘处的方位角膜不均匀性，并且能够在较高RF功率下操作。

公开(公告)号：US20180068833A1

公开(公告)日：2018-03-08

申请号：US15703213

申请日：2017-09-13

Applicant: LAM RESEARCH CORPORATION

Inventor： Hu Kang ,  Adrien LaVoie ,  Shankar Swaminathan ,  Jun Qian ,  Chloe Baldasseroni ,  Frank Pasquale ,  Andrew Duvall ,  Ted Minshall ,  Jennifer Petraglia ,  Karl Leeser ,  David Smith ,  Sesha Varadarajan ,  Edward Augustyniak ,  Douglas Keil

IPC: H01J37/32 ,  C23C16/509 ,  C23C16/34 ,  C23C16/455 ,  C23C16/40 ,  C23C16/505

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.

公开(公告)号：US09617638B2

公开(公告)日：2017-04-11

申请号：US14447203

申请日：2014-07-30

Applicant: Lam Research Corporation

Inventor： Adrien LaVoie ,  Hu Kang ,  Purushottam Kumar ,  Shankar Swaminathan ,  Jun Qian ,  Frank Pasquale ,  Chloe Baldasseroni

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44

CPC classification number: C23C16/50 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/45582 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0257 ,  H01L21/0262

Abstract: Disclosed are methods of depositing films of material on semiconductor substrates employing the use of a secondary purge. The methods may include flowing a film precursor into a processing chamber and adsorbing the film precursor onto a substrate in the processing chamber such that the precursor forms an adsorption-limited layer on the substrate. The methods may further include removing at least some unadsorbed film precursor from the volume surrounding the adsorbed precursor by purging the processing chamber with a primary purge gas, and thereafter reacting adsorbed film precursor while a secondary purge gas is flowed into the processing chamber, resulting in the formation of a film layer on the substrate. The secondary purge gas may include a chemical species having an ionization energy and/or a disassociation energy equal to or greater than that of O2. Also disclosed are apparatuses which implement the foregoing processes.

公开(公告)号：US20160147234A1

公开(公告)日：2016-05-26

申请号：US14805807

申请日：2015-07-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Karl Leeser ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Chloe Baldasseroni ,  Ted Minshall ,  Adrien LaVoie

IPC: G05D7/00 ,  F16K7/00

CPC classification number: F16K7/17 ,  B08B9/0328 ,  F16K7/123 ,  F16K7/14 ,  F16K7/16 ,  F16K7/20 ,  F16K27/003 ,  F16K27/0236 ,  Y10T137/87249 ,  Y10T137/87788 ,  Y10T137/87877 ,  Y10T137/87885 ,  Y10T137/87917

Abstract: A gas delivery system for a substrate processing system includes first and second valves, a first gas channel, and a cylinder. The first valve includes a first inlet and a first outlet. The first outlet is in fluid communication with a processing chamber of the substrate processing system. The second valve includes a second inlet and a second outlet. The cylinder defines a second gas channel having a first end and a second end. The cylinder is at least partially disposed within the first gas channel such that the cylinder and the first gas channel collectively define a flow channel. The flow channel is in fluid communication with the first end of the second gas channel and with the first inlet. A third gas channel is in fluid communication with the second end of the second gas channel and with the second inlet.

Abstract translation: 用于基板处理系统的气体输送系统包括第一和第二阀，第一气体通道和气缸。 第一阀包括第一入口和第一出口。 第一出口与衬底处理系统的处理室流体连通。 第二阀包括第二入口和第二出口。 气缸限定了具有第一端和第二端的第二气体通道。 气缸至少部分地设置在第一气体通道内，使得气缸和第一气体通道共同限定流动通道。 流动通道与第二气体通道的第一端和第一入口流体连通。 第三气体通道与第二气体通道的第二端和第二入口流体连通。

公开(公告)号：US20160079036A1

公开(公告)日：2016-03-17

申请号：US14668174

申请日：2015-03-25

Applicant: LAM RESEARCH CORPORATION

Inventor： Hu Kang ,  Adrien LaVoie ,  Shankar Swaminathan ,  Jun Qian ,  Chloe Baldasseroni ,  Frank Pasquale ,  Andrew Duvall ,  Ted Minshall ,  Jennifer Petraglia ,  Karl Leeser ,  David Smith ,  Sesha Varadarajan ,  Edward Augustyniak ,  Douglas Keil

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/455

CPC classification number: H01J37/3244 ,  C23C16/345 ,  C23C16/402 ,  C23C16/405 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32568 ,  H01J37/32623

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.

Abstract translation: 用于在衬底上沉积膜的衬底处理系统包括限定反应体积的处理室。 喷头包括杆部，其一端连接在处理室的上表面上。 基部连接到杆部的相对端并且从杆部径向向外延伸。 淋浴头构造成将至少一种工艺气体和吹扫气体引入反应体积。 等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。 边缘调整系统包括套环和寄生等离子体还原元件，该元件位于套环与喷头的上表面之间的茎部周围。 寄生等离子体还原元件被配置为减少喷头和处理室的上表面之间的寄生等离子体。

公开(公告)号：US20160032453A1

公开(公告)日：2016-02-04

申请号：US14798652

申请日：2015-07-14

Applicant: Lam Research Corporation

Inventor： Jun Qian ,  Hu Kang ,  Purushottam Kumar ,  Chloe Baldasseroni ,  Heather Landis ,  Andrew Kenichi Duvall ,  Mohamed Sabri ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Shankar Swaminathan ,  David Smith ,  Jeremiah Baldwin ,  Eashwar Ranganathan ,  Adrien LaVoie ,  Frank Pasquale ,  Jeongseok Ha ,  lngi Bae

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/46

CPC classification number: C23C16/45544 ,  C23C16/4481 ,  C23C16/4554

Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.

Abstract translation: 蒸气输送系统包括用于储存液体前体的安瓿和用于部分蒸发液体前体的加热器。 第一阀与推气源和安瓿连通。 第二个阀将蒸发的前体供应到加热的注入歧管。 阀歧管包括与加热的喷射歧管的出口流体连通的第一节点，具有与第一节点流体连通的入口和与真空流体连通的出口的第三阀，具有流体连通的入口的第四阀 其中第一节点和与第二节点流体连通的出口，具有与第二节点流体连通的出口的第五阀以及具有与第二节点流体连通的出口的第六阀。 气体分配装置与第二节点流体连通。

公开(公告)号：US11127567B2

公开(公告)日：2021-09-21

申请号：US16866065

申请日：2020-05-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hu Kang ,  Adrien LaVoie ,  Shankar Swaminathan ,  Jun Qian ,  Chloe Baldasseroni ,  Frank Pasquale ,  Andrew Duvall ,  Ted Minshall ,  Jennifer Petraglia ,  Karl Leeser ,  David Smith ,  Sesha Varadarajan ,  Edward Augustyniak ,  Douglas Keil

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/509

Abstract: A substrate processing system includes: a processing chamber defining a reaction volume; a showerhead including: a stem portion having one end connected adjacent to an upper surface of the processing chamber; and a base portion connected to an opposite end of the stem portion and extending radially outwardly from the stem portion, where the showerhead is configured to introduce gas into the reaction volume; a plasma generator configured to selectively generate RF plasma in the reaction volume; and a collar arranged around the stem portion of the showerhead between the base portion of the showerhead and the upper surface of the processing chamber. The collar includes one or more holes to supply purge gas from an inner cavity of the collar to between the base portion of the showerhead and the upper surface of the processing chamber.

公开(公告)号：US20170175269A1

公开(公告)日：2017-06-22

申请号：US15453263

申请日：2017-03-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Ramesh Chandrasekharan ,  Jennifer O'Loughlin ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Chloe Baldasseroni ,  Adrien LaVoie

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32

CPC classification number: C23C16/45561 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45591 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335

Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.