Method for coating the quartz burner of an hid lamp
    12.
    发明申请
    Method for coating the quartz burner of an hid lamp 失效
    用于涂覆隐藏灯的石英燃烧器的方法

    公开(公告)号:US20050163939A1

    公开(公告)日:2005-07-28

    申请号:US10502408

    申请日:2003-01-28

    CPC分类号: C03C17/3417 H01J61/35

    摘要: In order to improve the energy balance of an HID lamp, the quartz burner, preferably the inside thereof, is coated with a UV reflecting layer system by alternatingly applying amorphous thin layers made at least of titanium oxide and silicon oxide having the respective general stoichiometry TiOy and SiOx by means of a plasma impulse chemical vapor deposition (PICVD) method at a high power density and increased substrate temperatures ranging from 100° to 400° C., using small growth rates ranging from 1 nm/sec to 100 nm/sec so as to form an interference layer system having a thickness of less than 1200 nm and a minimized UV-active defective spot rate ranging from 0.1 to 1 percent.

    摘要翻译: 为了提高HID灯的能量平衡,石英燃烧器,优选其内部,通过交替地施加至少由氧化钛和氧化硅制成的非晶薄层,涂覆有一般的化学计量的TiO 通过等离子体脉冲化学气相沉积(PICVD)方法在高功率密度和100°至400°C范围内提高的衬底温度下, 使用范围从1nm /秒到100nm / sec的小增长率,以便形成厚度小于1200nm的干涉层系统和0.1至1%范围内的最小化UV有源缺陷点率。

    Gas supply method in a CVD coating system for precursors with a low vapor pressure
    13.
    发明申请
    Gas supply method in a CVD coating system for precursors with a low vapor pressure 有权
    用于具有低蒸气压的前体的CVD涂覆系统中的气体供应方法

    公开(公告)号:US20050132959A1

    公开(公告)日:2005-06-23

    申请号:US11014488

    申请日:2004-12-16

    CPC分类号: C23C16/448

    摘要: A gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. The gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. The gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. A first precursor vapor may be mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor is lower than that of the undiluted first precursor vapor at a constant overall pressure in the intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced.

    摘要翻译: 一种气体供应装置,用于将CVD蒸气压低的前体输送到CVD涂层系统。 气体供给装置具有用于前体的供给容器,该供应容器处于第一温度T 1,中间储存装置用于在第二温度T 2和恒定压力p 2下将气态前体中间储存在第一温度T 1之间的第一气体管线 供给容器和中间储存装置以及用于从中间储存装置除去气体的第二气体管线。 气体供给装置以第一温度T 1高于第二温度T 2的方式展开。 中间储存装置的较低温度T 2有助于维护工作,而前体在供应容器中的较高温度T 1下以更大的速率蒸发。 第一前体蒸气可以与中间存储装置中的气体和/或第二前体蒸气混合。 在中间储存装置中,在恒定的总体压力下,第一前体蒸气的分压低于未稀释的第一前体蒸汽的分压,从而可以减少中间储存装置的温度T 2和连续的管线。

    Method and apparatus for plasma enhanced chemical vapor deposition
    14.
    发明授权
    Method and apparatus for plasma enhanced chemical vapor deposition 有权
    等离子体增强化学气相沉积的方法和装置

    公开(公告)号:US07947337B2

    公开(公告)日:2011-05-24

    申请号:US11937280

    申请日:2007-11-08

    IPC分类号: H05H1/24

    摘要: A method and apparatus for coating substrates by means of plasma enhanced vapor deposition are provided, in which at least part of the surroundings of the substrate surface of a substrate to be coated is evacuated and a process gas with a starting substance for the coating is admitted, wherein the coating is deposited by a plasma being ignited by radiating in electromagnetic energy in the surroundings of the substrate surface filled with the process gas. The electromagnetic energy is radiated in by a multiplicity of pulse sequences, preferably microwave or radiofrequency pulses, with a multiplicity of pulses spaced apart temporally by first intermissions, wherein the electromagnetic energy radiated in is turned off in the intermissions, and wherein the intermissions between the pulse sequences are at least a factor of 3, preferably at least a factor of 5, longer than the first intermissions between the pulses within a pulse sequence.

    摘要翻译: 提供了一种通过等离子体增强气相沉积来涂覆衬底的方法和装置,其中待涂覆的衬底的衬底表面的至少部分周围环境被抽真空,并且允许具有用于涂层的起始物质的工艺气体 ,其中通过在填充有工艺气体的衬底表面的周围的电磁能辐射而被等离子体沉积涂层。 电磁能通过多个脉冲序列辐射,优选地是微波或射频脉冲,其中多个脉冲通过第一次间歇在时间上间隔开,其中辐射的电磁能量在间歇中被截断,并且其中, 脉冲序列至少比脉冲序列中的脉冲之间的第一次间隔长3倍,优选至少5倍。

    Coating system and method for coating, as well as coated articles
    20.
    发明申请
    Coating system and method for coating, as well as coated articles 有权
    涂层系统和涂层方法以及涂层制品

    公开(公告)号:US20080113109A1

    公开(公告)日:2008-05-15

    申请号:US11937279

    申请日:2007-11-08

    IPC分类号: C23C16/52

    摘要: In the case of CVD methods, comprising PECVD and PICVD methods, the aim of the invention is to improve the impurity-free and, as far as possible, temporally and quantitatively precise feeding of process gases for the targeted layer systems. To this end, the invention provides a coating system and a method for coating articles with alternating layers, in the case of which process gases are introduced in an alternating fashion into a gas mixing point and mixed with a further gas and led to the reaction chamber, in which the deposition is carried out by producing a plasma.

    摘要翻译: 在包括PECVD和PICVD方法的CVD方法的情况下,本发明的目的是改进目标层系统的无杂质,并且尽可能地临时和定量地精确地供给工艺气体。 为此,本发明提供一种涂覆系统和用交替层涂覆制品的方法,在这种情况下,工艺气体以交替的方式引入气体混合点并与另外的气体混合并被引导到反应室 ,其中通过产生等离子体进行沉积。