Gas supply method in a CVD coating system for precursors with a low vapor pressure
    1.
    发明申请
    Gas supply method in a CVD coating system for precursors with a low vapor pressure 有权
    用于具有低蒸气压的前体的CVD涂覆系统中的气体供应方法

    公开(公告)号:US20050132959A1

    公开(公告)日:2005-06-23

    申请号:US11014488

    申请日:2004-12-16

    CPC分类号: C23C16/448

    摘要: A gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. The gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. The gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. A first precursor vapor may be mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor is lower than that of the undiluted first precursor vapor at a constant overall pressure in the intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced.

    摘要翻译: 一种气体供应装置,用于将CVD蒸气压低的前体输送到CVD涂层系统。 气体供给装置具有用于前体的供给容器,该供应容器处于第一温度T 1,中间储存装置用于在第二温度T 2和恒定压力p 2下将气态前体中间储存在第一温度T 1之间的第一气体管线 供给容器和中间储存装置以及用于从中间储存装置除去气体的第二气体管线。 气体供给装置以第一温度T 1高于第二温度T 2的方式展开。 中间储存装置的较低温度T 2有助于维护工作,而前体在供应容器中的较高温度T 1下以更大的速率蒸发。 第一前体蒸气可以与中间存储装置中的气体和/或第二前体蒸气混合。 在中间储存装置中,在恒定的总体压力下,第一前体蒸气的分压低于未稀释的第一前体蒸汽的分压,从而可以减少中间储存装置的温度T 2和连续的管线。

    Gas supply method in a CVD coating system for precursors with a low vapor pressure
    2.
    发明授权
    Gas supply method in a CVD coating system for precursors with a low vapor pressure 有权
    用于具有低蒸气压的前体的CVD涂覆系统中的气体供应方法

    公开(公告)号:US07413767B2

    公开(公告)日:2008-08-19

    申请号:US11014488

    申请日:2004-12-16

    IPC分类号: C23C16/00

    CPC分类号: C23C16/448

    摘要: A method for producing optical functional coatings comprising niobium, tantalum, titanium or aluminum by supplying a precursor gas of low vapor pressure in a CVD coating system. A precursor selected from the group consisting of Nb, Ta, Ti, and Al compounds having a vapor pressure is maintained within a first supply container at a first temperature T1 and a first pressure p1. Precursor vapor of the precursor is supplied from the first supply container to an intermediate storage device through a first gas line which fluidly communicates the first supply container and the intermediate storage device. A carrier gas or reaction gas is supplied to the first gas line such that a mixture of the precursor with the carrier gas or the reaction gas is provided. The mixture is maintained in the intermediate storage device at a constant second pressure p2 lower than the first pressure p1 and at a second temperature T2 lower than the first temperature T1, and the mixture is supplied from the intermediate storage device through a second gas line.

    摘要翻译: 一种通过在CVD涂覆系统中提供低蒸气压的前体气体来制造包括铌,钽,钛或铝的光学功能涂层的方法。 选自具有蒸气压的Nb,Ta,Ti和Al化合物的前体的前体在第一温度T 1和第一压力p 1下保持在第一供应容器内。 前体的前体蒸气通过与第一供给容器和中间储存装置流体连通的第一气体管线从第一供给容器供给到中间储存装置。 向第一气体管线供给载气或反应气体,使得前体与载体气体或反应气体的混合物被提供。 将混合物以比第一压力p 1低的恒定的第二压力p 2和低于第一温度T 1的第二温度T 2保持在中间储存装置中,并且将混合物从中间储存装置通过 第二条天然气线。

    Feed device for a precursor
    9.
    发明申请
    Feed device for a precursor 审中-公开
    饲料装置为前体

    公开(公告)号:US20080220164A1

    公开(公告)日:2008-09-11

    申请号:US12042827

    申请日:2008-03-05

    IPC分类号: C23C16/44 C23C16/54

    摘要: In order to allow feeding for supply of a gaseous precursor for further processing while avoiding condensation, and in order to allow the feed process to be carried out as simply and reliably as possible, the invention provides a feed method as well as a feed device (1), comprising a vacuum pump (2) for evacuation of a storage vessel (3) for a precursor which is solid and/or liquid at room temperature and atmospheric pressure and for feeding the gaseous precursor which has been vaporized by evacuation, a first line section (23) on the inlet side of the vacuum pump (2) in order to produce a connection between the vacuum pump (2) and the storage vessel (3) for the solid and/or liquid precursor, at least one second line section (24) for supplying carrier gas to the vacuum pump (2), and a monitoring device (5) which can be connected to the first and the second line section (24) and, during operation of the apparatus, provides open-loop and/or closed-loop control for the flow rate of the gaseous precursor and/or of the carrier gas, by keeping the partial pressure of the gaseous precursor below its saturation vapor pressure at least after it enters the pump.

    摘要翻译: 为了允许进料供应气态前体以进一步处理,同时避免冷凝,并且为了使进料方法尽可能简单和可靠地进行,本发明提供了一种进料方法以及进料装置( 1),包括用于抽空在室温和大气压下为固体和/或液体的前体的储存容器(3)的真空泵(2),以及用于通过抽真空来蒸发气态前体的第一 在真空泵(2)的入口侧的管线部分(23),以便产生用于固体和/或液体前体的真空泵(2)和储存容器(3)之间的连接,至少一个第二管线 用于向真空泵(2)供应载气的部分(24)和可连接到第一和第二线路部分(24)的监测装置(5),并且在设备的操作期间提供开环 和/或t的闭环控制 通过将气态前体的分压保持在其饱和蒸汽压以下至少在其进入泵之后,气态前体和/或载气的流速。

    Internal coating of a glass tube by plasma pulse-induced chemical vapor
deposition
    10.
    发明授权
    Internal coating of a glass tube by plasma pulse-induced chemical vapor deposition 失效
    通过等离子体脉冲诱导化学蒸气沉积的玻璃管的内部涂层

    公开(公告)号:US5059231A

    公开(公告)日:1991-10-22

    申请号:US406402

    申请日:1989-09-12

    摘要: For producing a fiberoptic waveguide preforms by plasma pulse-induced chemical vapor deposition (PICVD), blank glass tubes are prepared having a continuously increasing internal diameter in the direction of gas flow. This type of blank compensates for the otherwise occurring decrease in the density of the layer-forming molecules due to pressure drop, thereby permitting the formation of a uniform masswise deposition of layer-forming molecules along the length of the tube. This permits the production of collapsed preforms having a series of coating layers of substantially uniform thickness.

    摘要翻译: 为了通过等离子体脉冲诱导化学气相沉积(PICVD)制造光纤波导预成型件,制备在气流方向具有连续增加的内径的空白玻璃管。 这种类型的空白补偿由于压降而导致的层形成分子的密度的另外发生的降低,从而允许在管的长度上形成均匀的成层分子的均匀沉积。 这允许生产具有基本均匀厚度的一系列涂层的塌缩的预成型件。