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公开(公告)号：US20190312413A1
公开(公告)日：2019-10-10
申请号：US15944955
申请日：2018-04-04
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Elad Mentovich
Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.
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公开(公告)号：US20240380184A1
公开(公告)日：2024-11-14
申请号：US18144984
申请日：2023-05-09
Applicant: Mellanox Technologies, Ltd.
Inventor： Vladimir Iakovlev , Yuri Berk , Isabelle Cestier , Elad Mentovich
Abstract: Some embodiments of the present invention are directed to a tunnel junction for a vertical-cavity surface-emitting laser (VCSEL) that controls optical and current confinement within the VCSEL. The tunnel junction may define an electrical current injection area and an optical aperture for the VCSEL and may include a heavily p++ doped p-type material and a heavily n++ doped n-type material disposed on the p-type material. At least a portion of the outer edges of the n-type material are etched such that the n-type material has a cross-sectional area that is less than a cross-sectional area of the p-type material. By removing a portion of n-type material near the outer edge of the tunnel junction, a sloped effective refractive index is formed, and an effective area of the tunnel junction is changed, which increases the overlap of the current density and the optical field of the VCSEL.
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公开(公告)号：US11769989B2
公开(公告)日：2023-09-26
申请号：US17249224
申请日：2021-02-24
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Isabelle Cestier , Elad Mentovich
CPC classification number: H01S5/34306 , H01S5/021 , H01S5/18308 , H01S5/18366 , H01S5/2086 , H01S5/3095 , H01S5/068 , H01S5/18344 , H01S5/3416 , H01S5/34313 , H01S5/34366
Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.
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公开(公告)号：US11728623B2
公开(公告)日：2023-08-15
申请号：US17247401
申请日：2020-12-10
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich
CPC classification number: H01S5/18347 , H01S5/18311 , H01S5/18377 , H01S5/2275 , H01S5/3095 , H01S5/3401 , H01S5/423
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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公开(公告)号：US20210184432A1
公开(公告)日：2021-06-17
申请号：US17247401
申请日：2020-12-10
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir Iakovlev , Tamir Sharkaz , Elad Mentovich
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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Patent Agency Ranking
公开(公告)号：US10396527B2
公开(公告)日：2019-08-27
申请号：US15622294
申请日：2017-06-14
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Itshak Kalifa , Elad Mentovich , Sylvie Rockman
Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
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公开(公告)号：US20180366905A1
公开(公告)日：2018-12-20
申请号：US15622294
申请日：2017-06-14
Applicant: Mellanox Technologies, Ltd.
Inventor： Alexei Sirbu , Vladimir Iakovlev , Yuri Berk , Itshak Kalifa , Elad Mentovich , Sylvie Rockman
CPC classification number: H01S5/18316 , H01S5/06226 , H01S5/18308 , H01S5/1833 , H01S5/18333 , H01S5/18341 , H01S5/18347 , H01S5/1838 , H01S5/2081 , H01S5/3095 , H01S5/34366
Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
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公开(公告)号：US12055774B2
公开(公告)日：2024-08-06
申请号：US17453222
申请日：2021-11-02
Applicant: Mellanox Technologies, Ltd.
Inventor： Dimitrios Kalavrouziotis , Yuri Berk , Vladimir Iakovlev , Elad Mentovich , Tamir Sharkaz
CPC classification number: G02B6/4239 , B29D11/00009 , G02B6/4244
Abstract: Various embodiments provide methods for fabricating a couplable electro-optical device. An example method comprises fabricating a pillar on a substrate by forming a lens spacer portion about an electro-optical component fabricated on the substrate; and adhering unshaped lens material to an exposed surface of the pillar. The exposed surface of the pillar is disposed opposite the substrate. The example method further comprises maintaining the unshaped lens material at a reflow temperature for a reflow time to allow the lens material to reflow into a formed lens shape, and curing the lens material to form an integrated lens having the formed lens shape secured to the lens spacer portion and formed about the electro-optical component on the substrate.
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公开(公告)号：US20240235160A9
公开(公告)日：2024-07-11
申请号：US18211710
申请日：2023-06-20
Applicant: Mellanox Technologies, Ltd.
Inventor： Yuri Berk , Vladimir lakovlev , Tamir Sharkaz , Elad Mentovich
CPC classification number: H01S5/18347 , H01S5/18311 , H01S5/18377 , H01S5/2275 , H01S5/3095 , H01S5/3401 , H01S5/423
Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.
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公开(公告)号：US11764543B2
公开(公告)日：2023-09-19
申请号：US16989907
申请日：2020-08-11
Applicant: MELLANOX TECHNOLOGIES, LTD.
Inventor： Vladimir Iakovlev , Yuri Berk , Paraskevas Bakopoulos , Elad Mentovich
CPC classification number: H01S5/18302 , G02F1/212 , H01S5/0071 , H01S5/0085 , H01S5/0265 , H01S5/02255 , H01S5/34313 , G02F2203/10 , H01S5/18308 , H01S5/18341 , H01S5/3095
Abstract: An optoelectronic device includes a substrate and first thin film layers disposed on the substrate and patterned to define a vertical-cavity surface-emitting laser (VCSEL), which is configured to emit optical radiation along an optical axis perpendicular to the substrate. Second thin film layers are disposed over the first thin film layers and are patterned to define an optical modulator in which the optical radiation propagates in a direction parallel to the substrate, and an optical coupler configured to couple the optical radiation from the VCSEL into the optical modulator.
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