Abstract:
Methods, apparatus, and systems for computing, analyzing, and improving integrated circuit yield and quality are disclosed herein. For example, in one exemplary method disclosed herein, information is received from processing test responses of integrated circuits designed for functional use in electronic devices. In this embodiment, the information is indicative of integrated circuit failures observed during testing of the integrated circuits and of possible yield limiting factors causing the integrated circuit failures. Probabilities that one or more of the possible yield limiting factors in the integrated circuits actually caused the integrated circuit failures are determined by statistically analyzing the received information. The probabilities that one or more possible yield limiting factors actually caused the integrated circuit failures are reported. Tangible computer-readable media comprising computer-executable instructions for causing a computer to perform any of the described methods are also disclosed.
Abstract:
Provided is a sensor array and a method of forming the same. The sensor array includes an array of apertures etched into a 3D patterned resist layer to expose areas of one or more agents and/or reagents deposited on a substrate. The sensor is formed using a Self-Aligned Imprint Lithography (“SAIL”) method, a process that allows for a one-time deposition of all required materials followed by a series of etching/cleaning steps. The location of reagents on the sensor template, as well as the concentration gradient of each reagent, may be controlled through the sensor manufacturing process. Bores of a single reagent, or bores containing two or more reagents, may be formed using the SAIL process.
Abstract:
An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
Abstract:
A device includes a plurality of structures, each structure including at least one ferromagnetic layer having fringe fields. Fringe fields of the structures interact to form a magnetic well for nanoparticles. This device may be adapted for biosensing, wherein the magnetic well is formed about a probe area.
Abstract:
Disclosed herein are representative embodiments of methods, apparatus, and systems for performing diagnostic from signatures created during circuit testing. For example, in one exemplary method disclosed herein, a signature produced by a signature generator is received. In this embodiment, the signature corresponds to the circuit's response to no more than one test pattern. The signature is compared to entries of a fault dictionary, an entry of the fault dictionary is matched to the signature if the entry identifies a fault that explains the signature, and the fault is stored in a list of fault candidates.
Abstract:
Methods and systems for IMEI registration are provided. In accordance with exemplary embodiments of the present invention, when an IMEI registration fails due to a network failure, the mobile station implements a back-off algorithm for future IMEI registration attempts. Specifically, the present invention provides a back-off algorithm which determines a different amount of time for the time period between each unsuccessful IMEI registration.
Abstract:
An exemplary method for making a memory structure comprises forming a first hard mask layer, forming at least one mask layer above the first hard mask layer, patterning the at least one mask layer, etching the at least one mask layer to form an opening having a first lateral width, and a second lateral width different than the first lateral width, forming a second hard mask layer having substantially the first and second lateral widths in the opening, and etching the first hard mask layer using at least one of the lateral widths of the second hard mask layer.
Abstract:
An apparatus for characterizing reactions including a spinnable medium with one or more internal chambers capable of containing one or more reagents, a composite reagent that includes a magnetic component, a rotating mechanism capable of turning the spinnable medium, and a reading mechanism capable of measuring the magnetic component at one or more regions of the spinnable medium.
Abstract:
A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.
Abstract:
An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.