公开(公告)号：US20120192937A1

公开(公告)日：2012-08-02

申请号：US13016460

申请日：2011-01-28

申请人： Mariappan Parans Paranthaman ,  Sung-Hun Wee ,  Frederick A. List, III ,  Claudia Cantoni ,  Lee Heatherly, JR. ,  Kyunghoon Kim ,  Thomas R. Fanning ,  Jon Bornstein

发明人： Mariappan Parans Paranthaman ,  Sung-Hun Wee ,  Frederick A. List, III ,  Claudia Cantoni ,  Lee Heatherly, JR. ,  Kyunghoon Kim ,  Thomas R. Fanning ,  Jon Bornstein

IPC分类号： H01L31/02 ,  H01L31/0368

CPC分类号： H01L31/03921 ,  H01L31/02366 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A thin film structure for photovoltaic applications includes a biaxially textured metal substrate; a seed layer epitaxially disposed on the metal substrate; a barrier layer comprising SrTiO3 epitaxially disposed on the seed layer; a cap layer comprising γ-Al2O3 epitaxially disposed on the SrTiO3 barrier layer; and a crystalline silicon layer epitaxially disposed on the cap layer, where the cap layer comprises a volume fraction of biaxial texture of at least about 80% and the crystalline silicon layer does not include a metal silicide phase.

摘要翻译： 用于光伏应用的薄膜结构包括双轴织构的金属基底; 外延地设置在所述金属基板上的籽晶层; 外延地设置在种子层上的包含SrTiO 3的阻挡层; 包含外延设置在SrTiO3阻挡层上的γ-Al2O3的覆盖层; 以及外延地设置在所述盖层上的晶体硅层，其中所述盖层包括至少约80％的双轴织构的体积分数，并且所述晶体硅层不包括金属硅化物相。

公开(公告)号：US20120035056A1

公开(公告)日：2012-02-09

申请号：US12850115

申请日：2010-08-04

申请人： TOLGA AYTUG ,  Mariappan Parans Paranthaman ,  Victor A. Maroni ,  Dean J. Miller

发明人： TOLGA AYTUG ,  Mariappan Parans Paranthaman ,  Victor A. Maroni ,  Dean J. Miller

IPC分类号： H01L39/00 ,  H01L39/24

CPC分类号： H01L39/2441 ,  H01L39/2454 ,  Y10T428/24612

摘要： A method of making a superconducting article that involves using MOCVD to deposit onto a uniaxially or biaxially textured surface an epitaxial layer that includes a superconducting material such as REBa2Cu3O7 and a secondary phase comprising at least one dopant, the dopant including Nb, Ta and/or V, or combinations thereof.

摘要翻译： 一种制造超导制品的方法，涉及使用MOCVD在单轴或双轴织构表面上沉积包括超导材料如REBa2Cu3O7的外延层和包含至少一种掺杂剂的次相，所述掺杂剂包括Nb，Ta和/或 V或其组合。

公开(公告)号：US20090137401A1

公开(公告)日：2009-05-28

申请号：US12363035

申请日：2009-01-30

申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

IPC分类号： H01L39/24 ,  B05D3/00 ,  B05D3/02

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

公开(公告)号：US09771656B2

公开(公告)日：2017-09-26

申请号：US13596792

申请日：2012-08-28

申请人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  John T. Simpson ,  Daniela Florentina Bogorin

发明人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  John T. Simpson ,  Daniela Florentina Bogorin

IPC分类号： C23C14/00 ,  C23C30/00 ,  B32B33/00 ,  C23C14/08

CPC分类号： C23C30/00 ,  B32B33/00 ,  B32B2307/73 ,  C23C14/08 ,  Y10T428/24355 ,  Y10T428/24364 ,  Y10T428/25

摘要： This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 μm×5 μm area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.

公开(公告)号：US09466853B2

公开(公告)日：2016-10-11

申请号：US13247417

申请日：2011-09-28

申请人： Gilbert M. Brown ,  Mariappan Parans Paranthaman ,  Sheng Dai ,  Nancy J. Dudney ,  Arumugan Manthiram ,  Timothy J. McIntyre ,  Xiao-Guang Sun ,  Hansan Liu

发明人： Gilbert M. Brown ,  Mariappan Parans Paranthaman ,  Sheng Dai ,  Nancy J. Dudney ,  Arumugan Manthiram ,  Timothy J. McIntyre ,  Xiao-Guang Sun ,  Hansan Liu

IPC分类号： H01M6/16 ,  H01M10/056 ,  H01M4/46 ,  H01M10/0525 ,  H01M10/054 ,  H01M4/50 ,  H01M10/058

CPC分类号： H01M10/054 ,  H01M4/38 ,  H01M4/463 ,  H01M4/50 ,  H01M6/16 ,  H01M10/0525 ,  H01M10/056 ,  H01M10/0568 ,  H01M10/0569 ,  H01M10/058 ,  H01M2300/0028 ,  Y02E60/122 ,  Y10T29/49108

摘要： Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum or lithium ions during a discharge cycle and deintercalating the aluminum or lithium ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum or lithium at the cathode.

摘要翻译： 为高能量密度铝电池提供组合物和制备方法。 电池包括包含铝金属的阳极。 电池还包括阴极，其包括能够在放电循环期间插入铝或锂离子的材料，并且在充电循环期间使铝或锂离子脱嵌。 电池还包括能够支持在阳极处可逆沉积和剥离铝的电解质，以及在阴极处可逆地插入和脱嵌铝或锂。

公开(公告)号：US08221909B2

公开(公告)日：2012-07-17

申请号：US12947911

申请日：2010-11-17

申请人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  Ozgur Polat

发明人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  Ozgur Polat

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： H01L39/2461 ,  B82Y10/00 ,  B82Y40/00 ,  C23C28/00 ,  H01L21/32058 ,  H01L28/75 ,  H01L29/0665 ,  H01L29/107 ,  Y10T428/24851 ,  Y10T428/24917

摘要： An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

摘要翻译： 公开了一种包括基板和支撑在基板上的相分离层的电子部件及其形成方法。 相分离层包括包含锰酸镧（LMO）和选自金属氧化物（MO），金属氮化物（MN），金属（Me）及其组合的第二相的第一相。 相分离材料可以是外延层，相分离层的上表面可以包括第一相和第二相之间的界面。 相分离层可以负载在包含选自IBAD MgO，LMO / IBAD-MgO，homoepi-IBAD MgO和LMO / homoepi-MgO的组合物的缓冲层上。 电子部件还可以包括支撑在相分离层上的电子活性层。 电子活性层可以是超导材料，铁电材料，多铁性材料，磁性材料，光伏材料，蓄电材料和半导体材料。

公开(公告)号：US20120152337A1

公开(公告)日：2012-06-21

申请号：US12974425

申请日：2010-12-21

申请人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

发明人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/032 ,  H01L31/047 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50

摘要： A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

摘要翻译： 一种异相结器件和制造方法，其中相分离的n型和p型半导体柱限定在衬底上方延伸的垂直取向的p-n结。 选择半导体材料用于热力学稳定且基本上彼此不溶的p型和n型支柱。 使用外延沉积工艺在成核层上形成支柱，并且相互不溶性驱动材料的相分离。 在外延沉积工艺期间，取向是使成核层开始垂直列的传播，导致整个沉积材料的基本有序的三维结构。 p型或n型半导体材料中的一种的至少一部分的氧化态相对于另一种改变，使得半导体材料的带隙能量相对于化学计量组成不同，并且器件优先 吸收特定选定的辐射带。

公开(公告)号：US08088503B2

公开(公告)日：2012-01-03

申请号：US12363035

申请日：2009-01-30

申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N Arendt ,  Liliana Stan ,  Stephen R Foltyn

发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N Arendt ,  Liliana Stan ,  Stephen R Foltyn

IPC分类号： H01B12/00 ,  B05D5/12 ,  H01L39/24

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。

公开(公告)号：US20110308615A1

公开(公告)日：2011-12-22

申请号：US13148925

申请日：2009-02-12

申请人： Charles W. Teplin ,  Howard M Branz ,  Lee Heatherly ,  Mariappan Parans Paranthaman

发明人： Charles W. Teplin ,  Howard M Branz ,  Lee Heatherly ,  Mariappan Parans Paranthaman

IPC分类号： H01L31/0256 ,  C30B25/02 ,  H01L31/18 ,  H01L21/20 ,  H01L31/036 ,  B32B9/04 ,  C30B25/18

CPC分类号： H01L21/02532 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/0262 ,  H01L31/03682 ,  H01L31/03921 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Crystal silicon processes and products (100) are disclosed. In any exemplary embodiment, a biaxially textured metal substrate (110) was fabricated by the Rolling-Assisted Biaxially Textured Substrate (RABiTS) process. Electron beam evaporation was used to grow buffer layers (120) heteroepitaxially on the metal substrate (110) as a buffer layer (120). After growth of the buffer layer (120), a silicon layer was grown using hot wire chemical vapor deposition (HWCVD). The silicon film had the same grain size as the underlying metal substrate (110). In addition, the orientation of these grains matched the orientations of the underlying metal substrate (110).

摘要翻译： 公开了晶体硅工艺和产品（100）。 在任何示例性实施例中，通过滚动辅助双轴织构基板（RABiTS）工艺制造双轴纹理金属基板（110）。 使用电子束蒸发来生长作为缓冲层（120）的作为异质外延的金属基板（110）上的缓冲层（120）。 在缓冲层（120）生长之后，使用热线化学气相沉积（HWCVD）生长硅层。 硅膜具有与下面的金属基板（110）相同的晶粒尺寸。 此外，这些颗粒的取向与下面的金属基板（110）的取向一致。

公开(公告)号：US20110160065A1

公开(公告)日：2011-06-30

申请号：US12947911

申请日：2010-11-17

申请人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  Ozgur Polat

发明人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  Ozgur Polat

IPC分类号： H01L39/02 ,  C23C14/34 ,  C23C14/06 ,  B32B3/10 ,  C30B23/02 ,  C30B23/06 ,  C30B25/02

CPC分类号： H01L39/2461 ,  B82Y10/00 ,  B82Y40/00 ,  C23C28/00 ,  H01L21/32058 ,  H01L28/75 ,  H01L29/0665 ,  H01L29/107 ,  Y10T428/24851 ,  Y10T428/24917

摘要： An electronic component that includes a substrate and a phase-separated layer supported on the substrate and a method of forming the same are disclosed. The phase-separated layer includes a first phase comprising lanthanum manganate (LMO) and a second phase selected from a metal oxide (MO), metal nitride (MN), a metal (Me), and combinations thereof. The phase-separated material can be an epitaxial layer and an upper surface of the phase-separated layer can include interfaces between the first phase and the second phase. The phase-separated layer can be supported on a buffer layer comprising a composition selected from the group consisting of IBAD MgO, LMO/IBAD-MgO, homoepi-IBAD MgO and LMO/homoepi-MgO. The electronic component can also include an electronically active layer supported on the phase-separated layer. The electronically active layer can be a superconducting material, a ferroelectric material, a multiferroic material, a magnetic material, a photovoltaic material, an electrical storage material, and a semiconductor material.

摘要翻译： 公开了一种包括基板和支撑在基板上的相分离层的电子部件及其形成方法。 相分离层包括包含锰酸镧（LMO）和选自金属氧化物（MO），金属氮化物（MN），金属（Me）及其组合的第二相的第一相。 相分离材料可以是外延层，相分离层的上表面可以包括第一相和第二相之间的界面。 相分离层可以负载在包含选自IBAD MgO，LMO / IBAD-MgO，homoepi-IBAD MgO和LMO / homoepi-MgO的组合物的缓冲层上。 电子部件还可以包括支撑在相分离层上的电子活性层。 电子活性层可以是超导材料，铁电材料，多铁性材料，磁性材料，光伏材料，蓄电材料和半导体材料。