利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.02 秒)

    Dental burr and dental handpiece
    15.
    发明授权
    Dental burr and dental handpiece 失效
    牙科毛刺和牙科手机

    公开(公告)号：US5022857A

    公开(公告)日：1991-06-11

    申请号：US287116

    申请日：1988-12-21

    申请人： Kanji Matsutani ,  Masatoshi Fukuda

    发明人： Kanji Matsutani ,  Masatoshi Fukuda

    IPC分类号： A61C1/05 ,  A61C1/14 ,  A61C3/02

    CPC分类号： A61C3/02 ,  A61C1/055 ,  A61C1/141

    摘要： A dental burr has an axis of rotation and a cooling water passage extending therethrough in coaxial relation to the dental burr. The cooling water passage opens to a front end face of the dental burr, and this opening in the front end of the dental burr is disposed in an area including the axis of rotation of the dental burr. A dental handpiece for rotatably holding a dental burr includes a handgrip portion, a hollow head portion provided at a front end of the handgrip portion, and a cooling water passage. This cooling water passage extends along the handgrip portion,and opens at one end to a rear end of the handgrip portion while the other end thereof is connected to an internal space of the head portion. Part of the internal space serves as a passage for communicating the cooling water passage of the dental handpiece with the cooling water passage of the dental burr held by the dental handpiece.

    CAPACITOR AND SEMICONDUCTOR DEVICE
    17.
    发明申请
    CAPACITOR AND SEMICONDUCTOR DEVICE 审中-公开
    电容器和半导体器件

    公开(公告)号：US20120119326A1

    公开(公告)日：2012-05-17

    申请号：US13207728

    申请日：2011-08-11

    申请人： Tsuyoshi Sugisaki ,  Masatoshi Fukuda

    发明人： Tsuyoshi Sugisaki ,  Masatoshi Fukuda

    IPC分类号： H01L29/92 ,  H01G4/005

    CPC分类号： H01G4/005 ,  H01G4/01 ,  H01G11/30 ,  H01L23/5223 ,  H01L23/5225 ,  H01L28/86 ,  H01L2924/0002 ,  Y02E60/13 ,  H01L2924/00

    摘要： A capacitor includes first electrode patterns and second electrode patterns disposed alternately on a plane, each of the first electrode patterns having a linear shape and extending in a first direction from a first end to a third end with a first length, each of the second electrodes having a linear shape and extending in said first direction from a second end to a fourth end with a second length shorter than the first length, a first wiring pattern supplying a first voltage to the first electrode patterns by first via-plugs, and a second wiring pattern supplying a second voltage to the second electrode patterns by second via-plugs, wherein the first end of the first electrode pattern extends beyond the second end of the second electrode pattern and the third end of the first electrode pattern extends beyond the fourth end of said the electrode.

    摘要翻译： 电容器包括交替地设置在平面上的第一电极图案和第二电极图案，每个第一电极图案具有直线形状并且在第一方向上从第一端延伸到具有第一长度的第三端，每个第二电极 具有线性形状并且在所述第一方向上从第二端延伸到具有比所述第一长度短的第二长度的第四端;第一布线图案，通过第一通孔插头向所述第一电极图案提供第一电压，第二布线图案 布线图案通过第二通孔将第二电压提供给第二电极图案，其中第一电极图案的第一端延伸超过第二电极图案的第二端，并且第一电极图案的第三端延伸超过第四端 的电极。

    Surgical stapler
    18.
    发明申请
    Surgical stapler 有权
    手术吻合器

    公开(公告)号：US20060191974A1

    公开(公告)日：2006-08-31

    申请号：US11357814

    申请日：2006-02-21

    申请人： Kanji Matsutani ,  Masatoshi Fukuda ,  Toshiharu Kamei ,  Takashi Ina

    发明人： Kanji Matsutani ,  Masatoshi Fukuda ,  Toshiharu Kamei ,  Takashi Ina

    IPC分类号： A61B17/10

    CPC分类号： A61B17/0684 ,  A61B34/76 ,  A61B2090/0811

    摘要： A surgical stapler has a body capable of containing a plurality of staples in an aligned state; a ram provided inside said body, having a central concave portion and pressure armatures on both sides of the concave portion; an anvil that, when the armatures of said ram contact both sides of a crown of a staple, forces the center of the crown into the concave portion of the ram; and a trigger rotatably supported on the body so as to cause relative movement between the ram and the anvil. A moving member strikes another member so as to produce a sound or a sensation of impact after a staple sandwiched between the ram and the anvil is bent by the advance of the anvil into the concave portion of the ram and bending of the staple is completed.

    摘要翻译： 手术吻合器具有能够容纳处于对准状态的多个钉的主体; 设置在所述主体内的冲头，在所述凹部的两侧具有中心凹部和压力衔铁; 砧座，当所述柱塞的电枢接触订书钉的冠部的两侧时，迫使冠部的中心进入压头的凹部; 以及触发器，其被可旋转地支撑在所述主体上，以便在所述压头和所述砧座之间产生相对运动。 移动构件撞击另一构件，以便在夹在砧座和砧座之间的钉子被砧座前进到冲头的凹部中弯曲的钉子之后产生冲击的声音或感觉，并且钉子的弯曲完成。

    Semiconductor memory device and manufacturing method thereof
    19.
    发明授权
    Semiconductor memory device and manufacturing method thereof 有权

    公开(公告)号：US06987297B2

    公开(公告)日：2006-01-17

    申请号：US10768188

    申请日：2004-02-02

    申请人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    发明人： Masaki Ishidao ,  Masahiro Kobayashi ,  Masatoshi Fukuda

    IPC分类号： H01L29/788

    CPC分类号： H01L21/28273 ,  G11C16/0475 ,  H01L29/7887

    摘要： A polysilicon film and the like are patterned to form n− diffusion layers on a silicon substrate. Subsequently, an outer edge of an Al2O3 film is made retreat to be smaller than that of a gate electrode by performing isotropic etching of the Al2O3 film, using a solution of sulfuric acid with hydrogen peroxide. A silicon oxide film, a silicon nitride film, the polysilicon film and the like are hardly removed although the solution of sulfuric acid with hydrogen peroxide exhibits higher etching rate to the Al2O3 film, enabling almost exclusive etching of the Al2O3 film at a high selectivity ratio. Subsequently, another polysilicon film is formed so as to fill spaces formed after the retreat of the Al2O3 film under the silicon oxide film. Subsequently, a sidewall insulating film is formed by remaining portions of the later polysilicon film in the spaces by performing RIE, oxidation, or the like of the later polysilicon film.

    Method for fabricating semiconductor device having a capacitor
    20.
    发明授权
    Method for fabricating semiconductor device having a capacitor 失效
    制造具有电容器的半导体器件的方法

    公开(公告)号：US06537874B2

    公开(公告)日：2003-03-25

    申请号：US09815012

    申请日：2001-03-23

    申请人： Shunji Nakamura ,  Masatoshi Fukuda

    发明人： Shunji Nakamura ,  Masatoshi Fukuda

    IPC分类号： H01L218242

    CPC分类号： H01L27/10855 ,  H01L27/10814 ,  H01L27/11502 ,  H01L28/91

    摘要： Insulation films 45, 56 having a contact hole 58 are formed on a substrate. A dummy plug 62 is formed in the contact hole 58. Insulation films 64, 66 are formed on the insulation film 56. An opening 70 for exposing at least a part of the dummy plug 62 is formed in the insulation films 64, 66. The dummy plug 62 is selectively removed through the opening 70. A storage electrode 72 is formed in the contact hole 58 and the opening 70. The insulation film 66 is selectively removed. A dielectric film 74 and a plate electrode are formed on the storage electrode 72. Whereby, without an extra support for supporting the storage electrode 72, the storage electrode 72 is prevented form falling down or peeling off, and defective contact and breakage of the lower structure due to disalignment can be precluded.

    摘要翻译： 在基板上形成具有接触孔58的绝缘膜45,56。 虚拟插头62形成在接触孔58中。绝缘膜64,66形成在绝缘膜56上。用于暴露虚拟插头62的至少一部分的开口70形成在绝缘膜64,66中。 虚拟插头62通过开口70选择性地去除。存储电极72形成在接触孔58和开口70中。绝缘膜66被选择性地去除。 在存储电极72上形成有电介质膜74和平板电极。由此，在没有用于支撑存储电极72的额外支撑的情况下，可以防止存储电极72的下落或剥离，并且下部的接触和断裂不良 可以排除由于不对准导致的结构。