公开(公告)号：US20130077066A1

公开(公告)日：2013-03-28

申请号：US13428519

申请日：2012-03-23

申请人： Ryoichi INANAMI ,  Tetsuro Nakasugi

发明人： Ryoichi INANAMI ,  Tetsuro Nakasugi

IPC分类号： G03B27/74

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： According to one embodiment, a pattern forming apparatus includes a stage provided under a lower surface of a substrate, a probe provided above an upper surface of the substrate, a drive unit which drives at least one of the stage and the probe, a monitor/lithography unit connected to the probe, and a control unit which controls the drive unit and the monitor/lithography unit. The control unit is configured to change a relative position between the probe and the substrate, and form a first pattern in an area direct above a second pattern after detecting the first pattern in the substrate by the probe.

摘要翻译： 根据一个实施例，图案形成装置包括设置在基板的下表面下方的台，设置在基板的上表面上方的探针，驱动台和探针中的至少一个的驱动单元，监视器/ 连接到探针的光刻单元，以及控制驱动单元和监视器/光刻单元的控制单元。 控制单元被配置为改变探针和衬底之间的相对位置，并且在通过探针检测到衬底中的第一图案之后，在直接在第二图案之上的区域中形成第一图案。

公开(公告)号：US07202488B2

公开(公告)日：2007-04-10

申请号：US10948555

申请日：2004-09-24

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： H01J37/302 ,  H01J37/30 ,  G03C5/00

CPC分类号： H01J37/304 ,  H01J37/153 ,  H01J2237/31754

摘要： A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

摘要翻译： 校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置，计算当带电粒子束偏转时产生的每个初始块的初始像差量， 根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量，并且计算校正基于主像差量的偏转失真的校正值。

公开(公告)号：US20060017013A1

公开(公告)日：2006-01-26

申请号：US11172996

申请日：2005-07-05

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： G21G5/00 ,  A61N5/00

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.

摘要翻译： 带电粒子束拉制设备包括带电粒子束源，具有用于旋转调节的第一和第二开口部分的第一和第二成形孔径掩模，用于检测平行于第二掩模的平面中的带电粒子束强度分布的检测部分， 从源极通过开口部分，旋转角度控制部分，以控制掩模之间的相对旋转角度，获取部分，以获得掩模之间的相对旋转角度，使得掩模之间的相对旋转角度的偏差落在预定范围内，基于 通过控制部分多次改变掩模之间的相对旋转角度并且通过每个旋转角度由检测部分检测光束而获得的检测结果，以及指令部分，其指示旋转角度控制部分，使得旋转角度控制部分之间的相对旋转角度 掩模是获得的旋转角度 。

公开(公告)号：US20050256600A1

公开(公告)日：2005-11-17

申请号：US11097357

申请日：2005-04-04

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： H01J37/305 ,  G03B7/20 ,  H01J37/00 ,  H01J37/317 ,  H01L21/027 ,  G06F19/00

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31762

摘要： An electron beam lithography system includes: a lithography tool writing patterns onto substrates, which are classified into lots, respectively, using sequentially apertures through which electron beams, based on a specific processing procedures; an aperture manager managing the apertures; a request obtaining module obtaining processing requests of the lots; a processing procedure storing file storing processing procedures; a processing time calculating module calculating corresponding processing times of the lots using the apertures based on corresponding processing procedures defined for each of the lots; and an order deciding module deciding an order of processing the lots based on the processing times.

摘要翻译： 电子束光刻系统包括：光刻工具，将基板上的图案分别按照特定的处理程序依次分成多个电子束; 管理孔的光圈管理器; 请求获取模块获取批次的处理请求; 存储文件存储处理过程的处理过程; 处理时间计算模块，基于针对每个批次定义的相应处理过程，使用所述孔来计算批次的相应处理时间; 以及基于处理时间决定处理批次的顺序的订单决定模块。

公开(公告)号：US20050088099A1

公开(公告)日：2005-04-28

申请号：US10948555

申请日：2004-09-24

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： G03F1/68 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  H01J25/22 ,  H01J37/147 ,  H01J37/153 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC分类号： H01J37/304 ,  H01J37/153 ,  H01J2237/31754

摘要： A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

摘要翻译： 校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置，计算当带电粒子束偏转时产生的每个初始块的初始像差量， 根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量，并且计算校正基于主像差量的偏转失真的校正值。

公开(公告)号：US20130222782A1

公开(公告)日：2013-08-29

申请号：US13600123

申请日：2012-08-30

申请人： Kentaro KASA ,  Manabu Takakuwa ,  Ryoichi Inanami ,  Kazuto Matsuki ,  Tetsuro Nakasugi ,  Hiroshi Koizumi ,  Minoru Inomoto

发明人： Kentaro KASA ,  Manabu Takakuwa ,  Ryoichi Inanami ,  Kazuto Matsuki ,  Tetsuro Nakasugi ,  Hiroshi Koizumi ,  Minoru Inomoto

IPC分类号： G03B27/58

CPC分类号： G03F7/70783 ,  G03F7/707

摘要： According to one embodiment, a substrate holding apparatus includes a main unit and a plurality of first support units. The main unit has a major surface. The main unit has a plate configuration. The first support units are disposed on the major surface. Each of the first support units includes a suction-holding unit capable of holding a substrate by suction. The suction-holding unit is movable along a first direction perpendicular to the major surface and a second direction parallel to the major surface.

摘要翻译： 根据一个实施例，一种基板保持装置包括主单元和多个第一支撑单元。 主机具有主要表面。 主机具有板配置。 第一支撑单元设置在主表面上。 每个第一支撑单元包括能够通过抽吸来保持基板的吸持保持单元。 抽吸保持单元可沿垂直于主表面的第一方向和平行于主表面的第二方向移动。

公开(公告)号：US20100078860A1

公开(公告)日：2010-04-01

申请号：US12563461

申请日：2009-09-21

申请人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

发明人： Ikuo Yoneda ,  Kentaro Matsunaga ,  Yukiko Kikuchi ,  Yoshihisa Kawamura ,  Eishi Shiobara ,  Shinichi Ito ,  Tetsuro Nakasugi ,  Hirokazu Kato

IPC分类号： B29C35/08

CPC分类号： B29C37/0003 ,  B29C35/0888 ,  B29C37/006 ,  B29C59/022 ,  B29C2035/0822 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

摘要翻译： 压印方法包括将光固化树脂施加在待加工的基板上，所述基板包括施加有光固化树脂的第一和第二区域，使印模与光固化树脂接触，通过照射光固化树脂来固化光固化树脂 光固化树脂，其光通过压印模具，通过对施加在基板的区域上的光固化树脂进行预定处理产生气体，该区域至少包括第一区域，其中从光可固化 施加在第一区域上的树脂大于由第二区域的光固化树脂产生的气体的量，并且在产生气体之后通过从光固化树脂分离压印模具来形成图案。

公开(公告)号：US07368737B2

公开(公告)日：2008-05-06

申请号：US11409987

申请日：2006-04-25

申请人： Ryoichi Inanami ,  Tetsuro Nakasugi

发明人： Ryoichi Inanami ,  Tetsuro Nakasugi

IPC分类号： H01J37/08

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.

摘要翻译： 公开了一种电子束写入方法，其中包括准备电子束写入数据，该电子束写入数据由写入模式数据构成，该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示 描述了CP电子束写入数据到电子束写入装置的CP孔径数据，CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置， 并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据，同时在校正镜头位置的同时确定各个扩展镜头的照射时间，并且输出对应于镜头数据的控制信号以重复所需图案的镜头 ，由电子束写入装置。

公开(公告)号：US20060289805A1

公开(公告)日：2006-12-28

申请号：US11430044

申请日：2006-05-09

申请人： Tetsuro Nakasugi ,  Noriaki Sasaki ,  Takeshi Koshiba ,  Takumi Ota

发明人： Tetsuro Nakasugi ,  Noriaki Sasaki ,  Takeshi Koshiba ,  Takumi Ota

IPC分类号： G21G5/00

CPC分类号： H01J37/3026 ,  H01J2237/31761

摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

公开(公告)号：US07045801B2

公开(公告)日：2006-05-16

申请号：US11086589

申请日：2005-03-23

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： H01J37/02 ,  G21G5/00 ,  G06F17/50

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G21K1/087 ,  H01J37/3174 ,  H01J2237/31776

摘要： Two or more-staged masks are prepared for a charged beam generating source. One mask has first aperture sections having rectangular apertures arranged into a lattice form, and electrodes which deflects a beam at respective first aperture sections. The other mask has a second aperture section having basic figure apertures for shaping the beam which passes or passed through the first aperture sections. Layout data of a semiconductor apparatus are divided into sizes of the basic figures which take reduction in exposure into consideration so as to be classified according to the basic figures. The beam which is shaped into a form of an overlapped portion of the divided layouts and the classified basic figure is emitted onto a sample.