公开(公告)号：US08541780B2

公开(公告)日：2013-09-24

申请号：US12872823

申请日：2010-08-31

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Kosei Noda ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Hotaka Maruyama

IPC分类号： H01L29/12 ,  H01L29/786

CPC分类号： H01L29/78606 ,  H01L23/5329 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

摘要： It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

摘要翻译： 本发明的目的是制造具有电特性稳定的薄膜晶体管的高可靠性的半导体器件。 覆盖薄膜晶体管的氧化物半导体层的绝缘层包含硼元素或铝元素。 通过使用含有硼元素或铝元素的硅靶或氧化硅靶的溅射法形成含有硼元素或铝元素的绝缘层。 或者，代替硼元素的含有锑（Sb）元素或磷（P）元素的绝缘层覆盖薄膜晶体管的氧化物半导体层。

公开(公告)号：US08514341B2

公开(公告)日：2013-08-20

申请号：US12978844

申请日：2010-12-27

申请人： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

发明人： Yoshinari Higaki ,  Masayuki Sakakura ,  Shunpei Yamazaki

IPC分类号： G02F1/136

CPC分类号： H01L29/78669 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3248 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786

摘要： It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

摘要翻译： 本发明的目的是在不增加布线的横截面积的情况下连接由两个不兼容的膜（ITO膜和铝膜）形成的布线，电极等，并且甚至实现更低的功率消耗 当屏幕尺寸变大时。 本发明提供一种两层结构，其包括具有比上层宽的宽度的上层和下层。 第一导电层由Ti或Mo形成，并且在第一导电层上形成具有低电阻的铝（纯铝）的第二导电层。 从上层的端部突出的下层的一部分与ITO结合。

公开(公告)号：US08492764B2

公开(公告)日：2013-07-23

申请号：US12848375

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5278 ,  H01L2251/5323

摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。 包括与源极和漏极层重叠的氧化物半导体层的倒置共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管， 并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08488077B2

公开(公告)日：2013-07-16

申请号：US13363405

申请日：2012-02-01

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US08319218B2

公开(公告)日：2012-11-27

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。

公开(公告)号：US20120248448A1

公开(公告)日：2012-10-04

申请号：US13444565

申请日：2012-04-11

申请人： Masayuki Sakakura ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Shunpei Yamazaki

IPC分类号： H01L29/786

CPC分类号： H01L27/1244 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/123 ,  G09G3/2007 ,  G09G3/36 ,  G09G2300/0426 ,  G09G2310/0235 ,  H01L27/0255 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1274 ,  H01L27/3223 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78663 ,  H01L29/78675 ,  H01L2227/323 ,  H01L2924/13069

摘要： An insulating film provided between adjacent pixels is referred to as a bank, a partition, a barrier, an embankment or the like, and is provided above a source wiring or a drain wiring for a thin film transistor, or a power supply line. In particular, at an intersection portion of these wirings provided in different layers, a larger step is formed there than in other portions. Even in a case that the insulating film provided between adjacent pixels is formed by a coating method, there is a problem that thin portions are partially formed due to this step and the withstand pressure is reduced. In the present invention, a dummy material is arranged near the large step portion, particularly, around the intersection portion of wirings, so as to alleviate unevenness formed thereover. The upper wring and the lower wiring are arranged in a misaligned manner so as not to align the end portions.

摘要翻译： 设置在相邻像素之间的绝缘膜被称为堤，隔板，阻挡层，路堤等，并且设置在用于薄膜晶体管或电源线的源极布线或漏极布线的上方。 特别地，在这些布线的交叉部分设置在不同的层中，在其中形成比其他部分更大的台阶。 即使在通过涂布法形成相邻像素之间的绝缘膜的情况下，存在由于该步骤而部分地形成薄壁部分并且耐受压力降低的问题。 在本发明中，在大台阶部分附近设置虚拟材料，特别是布置在配线的交叉部分周围，以减轻形成在其上的不均匀。 上部绞线和下部布线以不对准的方式布置，以便不使端部对齐。

公开(公告)号：US08198635B2

公开(公告)日：2012-06-12

申请号：US12915171

申请日：2010-10-29

申请人： Satoshi Murakami ,  Masayuki Sakakura

发明人： Satoshi Murakami ,  Masayuki Sakakura

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L51/5246 ,  H01L27/3244 ,  H01L27/3276 ,  H01L2251/566

摘要： An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor.

摘要翻译： 本发明的目的是提供一种制造发光器件的方法，该发光器件能够减少在制造发光器件时引起的静电电荷引起的元件的劣化。 本发明的另一个目的是提供一种发光装置，其中由静电引起的元件的劣化导致的缺陷减少。 制造发光器件的方法包括形成用于驱动发光元件的顶栅型晶体管的步骤。 在形成顶栅型晶体管的步骤中，当处理半导体层时，在衬底上形成以行和列延伸的第一栅格状半导体层。 多个第二岛状半导体层形成在第一半导体层之间。 多个第二岛状第二半导体层用作晶体管的有源层。

公开(公告)号：US08168523B2

公开(公告)日：2012-05-01

申请号：US12986243

申请日：2011-01-07

申请人： Hideto Ohnuma ,  Masayuki Sakakura

发明人： Hideto Ohnuma ,  Masayuki Sakakura

IPC分类号： H01L21/3205

CPC分类号： H01L27/127 ,  H01L21/0273 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5259

摘要： The invention provides a technique to manufacture a highly reliable semiconductor device and a display device at high yield. As an exposure mask, an exposure mask provided with a diffraction grating pattern or an auxiliary pattern formed of a semi-transmissive film with a light intensity reducing function is used. With such an exposure mask, various light exposures can be more accurately controlled, which enables a resist to be processed into a more accurate shape. Therefore, when such a mask layer is used, the conductive film and the insulating film can be processed in the same step into different shapes in accordance with desired performances. As a result, thin film transistors with different characteristics, wires in different sizes and shapes, and the like can be manufactured without increasing the number of steps.

摘要翻译： 本发明提供了以高产率制造高度可靠的半导体器件和显示器件的技术。 作为曝光掩模，使用设置有衍射光栅图案的曝光掩模或由具有光强度降低功能的半透射膜形成的辅助图案。 通过这种曝光掩模，可以更精确地控制各种光照射，这使得抗蚀剂能够被加工成更准确的形状。 因此，当使用这种掩模层时，导电膜和绝缘膜可以根据期望的性能在同一步骤中被加工成不同的形状。 结果，可以在不增加步数的情况下制造具有不同特性的薄膜晶体管，不同尺寸和形状的导线等。

公开(公告)号：US20110298362A1

公开(公告)日：2011-12-08

申请号：US13211815

申请日：2011-08-17

申请人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

发明人： Masayuki Sakakura ,  Ritsuko Nagao ,  Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki ,  Yoshifumi Tanada

IPC分类号： H01J1/62

CPC分类号： H01L27/3276 ,  H01L27/12

摘要： A display device with high-definition, in which display unevenness due to a voltage drop in a wiring or display unevenness due to a variation in characteristics of TFTs are suppressed. The display device of the invention comprises a first wiring for transmitting a video signal and a second wiring for supplying a current to a light emitting element. The first wiring and the second wiring extend parallel to each other, and are formed so as to overlap with each other at least partly with an insulating layer interposed therebetween.

摘要翻译： 具有高清晰度的显示装置，其中由于TFT的特性变化引起的布线中的电压降或显示不均匀性引起的显示不均匀性被抑制。 本发明的显示装置包括用于传输视频信号的第一布线和用于向发光元件提供电流的第二布线。 第一布线和第二布线彼此平行地延伸，并且形成为至少部分地彼此重叠，并且隔着绝缘层。

公开(公告)号：US08044574B2

公开(公告)日：2011-10-25

申请号：US12406223

申请日：2009-03-18

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Kengo Akimoto ,  Gen Fujii ,  Tetsuji Yamaguchi

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Kengo Akimoto ,  Gen Fujii ,  Tetsuji Yamaguchi

IPC分类号： H01L51/10

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。