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11.发明授权公开(公告)号：US09162876B2
公开(公告)日：2015-10-20
申请号：US13419230
申请日：2012-03-13
申请人： Pietro Corona , Marco Ferrera , Igor Varisco , Roberto Campedelli
发明人： Pietro Corona , Marco Ferrera , Igor Varisco , Roberto Campedelli
CPC分类号： B81C1/00158 , B81B2201/0257 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.
摘要翻译： 本文公开了一种微机电装置及其制造方法。 一个或多个实施例可以包括通过电介质层形成与衬底分离的半导体结构层，以及通过暴露电介质层的一部分的结构层来打开多个沟槽。 电介质层的牺牲部分通过膜区域中的多个沟槽选择性地去除，以便释放结构层的相应部分以形成膜。 为了封闭沟槽，将晶片以这样的方式达到退火温度一段时间，使得膜的原子迁移以达到最小能量构型。
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12.发明申请公开(公告)号：US20120018819A1
公开(公告)日：2012-01-26
申请号：US13190254
申请日：2011-07-25
申请人： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
发明人： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
CPC分类号： B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
摘要： A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.
摘要翻译： 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。
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公开(公告)号：USRE41856E1
公开(公告)日：2010-10-26
申请号：US10229396
申请日：2002-08-26
IPC分类号： G01P15/125 , G01P9/04
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81C1/00246 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
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公开(公告)号：US06209394B1
公开(公告)日：2001-04-03
申请号：US09178285
申请日：1998-10-23
IPC分类号： G01P904
CPC分类号： G01C19/574 , G01C19/5769 , G01P15/0802 , H01L21/76202 , H01L21/764
摘要： An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.
摘要翻译： 角速度传感器包括一对移动质量块，其形成在外延层中并且通过锚定元件锚固到装置的其余部分。 移动质量彼此对称，并且具有插入有第一固定激励电极的第一移动激励电极和插入第二固定检测电极的第二移动检测电极。 第一移动和固定激励电极沿第一方向延伸，并且第二移动和固定检测电极在垂直于第一方向的第二方向上延伸并且设置在平行于装置表面的单个平面上。
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15.发明授权Method for manufacturing integrated structures including removing a sacrificial region 失效包括去除牺牲区域的集成结构的制造方法公开(公告)号：US06197655B1
公开(公告)日：2001-03-06
申请号：US09113466
申请日：1998-07-10
申请人： Pietro Montanini , Marco Ferrera , Laura Castoldi , Ilaria Gelmi
发明人： Pietro Montanini , Marco Ferrera , Laura Castoldi , Ilaria Gelmi
IPC分类号： H01L2176
CPC分类号： B81C1/00476 , B81B2203/033 , B81C1/00801 , B81C2201/0177 , B81C2201/053 , G01C19/56 , G01P15/0802 , G01P15/097 , G01P15/125 , H01L21/76202 , H01L21/764
摘要： The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a silicon carbide layer; defining photolithographically the silicon carbon layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.
摘要翻译： 该方法基于使用碳化硅掩模去除牺牲区域。 在制造集成半导体材料结构的情况下，执行以下步骤：在半导体材料的衬底上形成氧化硅牺牲区; 生长伪外延层; 形成电子电路部件; 沉积碳化硅层; 光刻地定义硅碳层，以形成含有要形成的微结构的形貌的蚀刻掩模; 利用蚀刻掩模，在伪外延层中形成直到牺牲区域的沟槽，以横向限定微结构; 并通过沟槽去除牺牲区域。
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16.发明授权Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom 有权用于制造高灵敏度电容和谐振集成传感器，特别是加速度计和陀螺仪以及由其制造的传感器的方法公开(公告)号：US06184052B2
公开(公告)日：2001-02-06
申请号：US09428863
申请日：1999-10-26
IPC分类号： H01L2100
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81B2203/0136 , B81B2203/0307 , B81C1/00246 , B81C2201/0109 , B81C2201/014 , B81C2203/0735 , G01C19/56 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
摘要翻译： 使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。 为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。 通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。 然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。
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17.发明授权Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权具有设置有过滤器的掩埋区域的微机械结构的制造方法公开(公告)号：US08633553B2
公开(公告)日：2014-01-21
申请号：US13190254
申请日：2011-07-25
申请人： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
发明人： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
CPC分类号： B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
摘要： A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.
摘要翻译： 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。
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18.再颁专利Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 有权用于制造高灵敏度加速度和陀螺仪集成传感器的过程以及由此产生的传感器公开(公告)号：USRE41889E1
公开(公告)日：2010-10-26
申请号：US10360367
申请日：2003-02-05
IPC分类号： H01L21/00
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81C1/00246 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
摘要翻译： 从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。 为了制造质量，在衬底中形成掩埋的导电区域。 然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。 然后使用核区域生长外延层。 沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。 最后，去除牺牲区域，形成气隙。
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19.发明授权Process for manufacturing micromechanical components in a semiconductor material wafer with reduction in the starting wafer thickness 有权在半导体材料晶片中制造微型机械部件的方法，其中起始晶片厚度减小公开(公告)号：US06689627B2
公开(公告)日：2004-02-10
申请号：US10037484
申请日：2001-12-19
IPC分类号： H01L2100
CPC分类号： H01L21/2007 , H01L21/76256
摘要： A process for manufacturing components in a multi-layer wafer, including the steps of: providing a multi-layer wafer comprising a first semiconductor material layer, a second semiconductor material layer (, and a dielectric material layer arranged between the first and the second semiconductor material layer; and removing the first semiconductor material layer initially by mechanically thinning the first semiconductor material layer, so as to form a residual conductive layer, and subsequently by chemically removing the residual conductive layer. In one application, the multi-layer wafer is bonded to a first wafer of semiconductor material, with the second semiconductor material layer facing the first wafer, after micro-electromechanical structures have been formed in the second semiconductor material layer of the multi-layer wafer.
摘要翻译： 一种用于制造多层晶片中的部件的方法，包括以下步骤：提供包括第一半导体材料层，第二半导体材料层（以及布置在第一和第二半导体之间的介电材料层）的多层晶片 最初通过机械稀化第一半导体材料层去除第一半导体材料层，从而形成残留的导电层，随后通过化学去除残留的导电层，在一个应用中，多层晶片被粘合 在多层晶片的第二半导体材料层中形成微机电结构之后，将第二半导体材料层面向第一晶片的半导体材料的第一晶片。
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公开(公告)号：US06527961B1
公开(公告)日：2003-03-04
申请号：US09033467
申请日：1998-03-02
IPC分类号： C23F100
CPC分类号： G01L9/0054 , G01L9/0055
摘要： A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.
摘要翻译： 一种在单晶硅衬底上形成二氧化硅区域的方法。 硅层的外延生长，在二氧化硅区域上方的硅层中的孔的开放，以及通过孔的化学侵蚀去除构成该区域的二氧化硅，直到连接到衬底的硅隔膜 沿着边缘并与之隔开一个空间。 为了形成绝对压力微传感器，必须密封空间。 为此，该方法提供的孔具有小于隔膜厚度的直径，并且通过在大气压下气相沉积形成二氧化硅层来封闭孔。
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