公开(公告)号：US09741580B2

公开(公告)日：2017-08-22

申请号：US14674476

申请日：2015-03-31

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVilliers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L29/76 ,  H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/22 ,  H01L21/266 ,  H01L21/32 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

公开(公告)号：US20150206760A1

公开(公告)日：2015-07-23

申请号：US14674476

申请日：2015-03-31

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVilliers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/02

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US08889559B2

公开(公告)日：2014-11-18

申请号：US13712830

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/308 ,  B44C1/22

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/266 ,  H01L21/31144 ,  H01L21/76816 ,  Y10S438/947

Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.

Abstract translation: 在衬底上形成图案的方法包括在第二材料中形成的第一开口的高度向外突出形成间隔开的第一材料包括柱。 在第一含材料柱的侧壁上形成侧壁间隔物。 侧壁间隔物在第一含材料柱的横向向外形成间隙空间。 间隙空间由四个第一材料包括柱的侧壁上的纵向接触的侧壁间隔单独包围。

公开(公告)号：US08999852B2

公开(公告)日：2015-04-07

申请号：US13712806

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US20140162457A1

公开(公告)日：2014-06-12

申请号：US13712806

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/311 ,  H01L21/31

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US20140162430A1

公开(公告)日：2014-06-12

申请号：US14180197

申请日：2014-02-13

Applicant: Micron Technology, Inc.

Inventor： Kevin R. Shea ,  Thomas M. Graettinger

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L28/92 ,  H01L21/30625 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108

Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.

Abstract translation: 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。

公开(公告)号：US20130252398A1

公开(公告)日：2013-09-26

申请号：US13904828

申请日：2013-05-29

Applicant: Micron Technology, Inc.

Inventor： Kevin R. Shea ,  Thomas M. Graettinger

IPC: H01L21/306

CPC classification number: H01L28/92 ,  H01L21/30625 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108

Abstract: The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.

Abstract translation: 本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。 本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。 金属氮化物可以是半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。 选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。 在随后的处理中，容器可以并入电容器中。

公开(公告)号：US20130244426A1

公开(公告)日：2013-09-19

申请号：US13890160

申请日：2013-05-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kevin R. Shea

IPC: H01L21/768

CPC classification number: H01L21/306 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76865 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/91

Abstract: Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.