公开(公告)号：US08937018B2

公开(公告)日：2015-01-20

申请号：US13786848

申请日：2013-03-06

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  Ranjan Khurana

IPC: H01L21/311 ,  H01L21/308

CPC classification number: H01L21/0337

Abstract: A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 光致抗蚀剂在圆柱状结构的顶部和侧面向内形成。 图案化光致抗蚀剂以在圆柱状结构物的横向外侧形成到光致抗蚀剂中的间隙。 间隙空间被至少三个圆筒状结构包围。 图案化的光致抗蚀剂用作蚀刻掩模，同时将间隙开口蚀刻到基底中，同时光致抗蚀剂在圆柱状结构的侧向内侧。 公开其他方面。

公开(公告)号：US20140256140A1

公开(公告)日：2014-09-11

申请号：US13786848

申请日：2013-03-06

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  Ranjan Khurana

IPC: H01L21/308

CPC classification number: H01L21/0337

Abstract: A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 光致抗蚀剂在圆柱状结构的顶部和侧面向内形成。 图案化光致抗蚀剂以在圆柱状结构物的横向外侧形成到光致抗蚀剂中的间隙。 间隙空间被至少三个圆筒状结构包围。 图案化的光致抗蚀剂用作蚀刻掩模，同时将间隙开口蚀刻到基底中，同时光致抗蚀剂在圆柱状结构的侧向内侧。 公开其他方面。

公开(公告)号：US08999852B2

公开(公告)日：2015-04-07

申请号：US13712806

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。

公开(公告)号：US08889558B2

公开(公告)日：2014-11-18

申请号：US13712820

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Ranjan Khurana ,  Anton J. deVillers ,  Kevin J. Torek ,  Shane J. Trapp ,  Scott L. Light ,  James M. Buntin

IPC: H01L21/308 ,  B44C1/22 ,  H01L21/302

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.

Abstract translation: 在衬底上形成图案的方法包括在衬底的材料中形成开口。 开口被加宽以与紧邻的开口接合以在扩宽之后形成包括材料的间隔柱。 公开了其他实施例。

公开(公告)号：US08815497B2

公开(公告)日：2014-08-26

申请号：US13941747

申请日：2013-07-15

Applicant: Micron Technology, Inc.

Inventor： Dan Millward ,  Kaveri Jain ,  Zishu Zhang ,  Lijing Gou ,  Anton J. deVillers ,  Jianming Zhou ,  Yuan He ,  Michael Hyatt ,  Scott L. Light

IPC: G03F7/26

CPC classification number: H01L21/76879 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10882 ,  H01L27/10888

Abstract: Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.

Abstract translation: 一些实施例包括形成图案的方法。 半导体衬底被形成为在一组导电结构之上包括电绝缘材料。 跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。 特征的二维阵列形成在电绝缘材料上。 二维阵列跨越互连区域并跨越次级区域延伸。 二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分 被转移到电绝缘材料中。

公开(公告)号：US20140162457A1

公开(公告)日：2014-06-12

申请号：US13712806

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Vishal Sipani ,  Anton J. deVillers ,  William R. Brown ,  Shane J. Trapp ,  Ranjan Khurana ,  Kevin R. Shea

IPC: H01L21/311 ,  H01L21/31

CPC classification number: H01L21/308 ,  H01L21/02642 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/22 ,  H01L21/266 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/76816

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract translation: 在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。 侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。 间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。 公开了其他实施例，包括与方法无关的结构。