公开(公告)号：US10242970B2

公开(公告)日：2019-03-26

申请号：US15159237

申请日：2016-05-19

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC: H01L25/075 ,  H01L23/00 ,  H01L33/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/447 ,  H01L23/495 ,  H01L33/48 ,  H01L33/62

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

公开(公告)号：US09935237B2

公开(公告)日：2018-04-03

申请号：US15069262

申请日：2016-03-14

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer

IPC: H01L31/00 ,  H01L33/02 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/025 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

公开(公告)号：US09362259B2

公开(公告)日：2016-06-07

申请号：US14738663

申请日：2015-06-12

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC: H01L25/075 ,  H01L33/00 ,  H01L23/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/447 ,  H01L23/495 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/447 ,  H01L23/49513 ,  H01L24/04 ,  H01L24/06 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83001 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/8314 ,  H01L2224/83193 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

公开(公告)号：US09059380B2

公开(公告)日：2015-06-16

申请号：US14305387

申请日：2014-06-16

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC: H01L21/00 ,  H01L33/48 ,  H01L33/00 ,  H01L23/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/447 ,  H01L23/495

CPC classification number: H01L25/0753 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/447 ,  H01L23/49513 ,  H01L24/04 ,  H01L24/06 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83001 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/8314 ,  H01L2224/83193 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract translation: 本文公开了用于半导体器件的不连续键。 根据特定实施例的装置包括第一基板和第二基板，第一基板和第二基板中的至少一个具有多个固态换能器。 第二基板可以包括多个突起和多个中间区域，并且可以以不连续的键连接到第一基板。 单独的固态换能器可以至少部分地设置在相应的中间区域内，并且不连续键可以包括将各个固态换能器接合到相应的中间区域的盲端的粘合材料。 本文公开了用于半导体器件的不连续键的相关方法和系统。

公开(公告)号：US20140319536A1

公开(公告)日：2014-10-30

申请号：US14262538

申请日：2014-04-25

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Lifang Xu ,  Scott D. Schellhammer ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405

Abstract: Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material.

Abstract translation: 本文公开了具有蜂窝阵列和相关制造方法的固态照明（“SSL”）设备。 在一个实施例中，发光二极管包括具有第一表面和与第一表面相对的第二表面的半导体材料。 半导体材料具有从第一表面延伸到半导体材料中的孔。 发光二极管还包括与半导体材料直接接触的有源区，并且有源区的至少一部分位于半导体材料的孔中。

公开(公告)号：US12283644B2

公开(公告)日：2025-04-22

申请号：US18359795

申请日：2023-07-26

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L33/38 ,  H01L31/0216 ,  H01L31/0236 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20240297269A1

公开(公告)日：2024-09-05

申请号：US18664203

申请日：2024-05-14

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

IPC: H01L33/24 ,  H01L33/00 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

公开(公告)号：US11901342B2

公开(公告)日：2024-02-13

申请号：US17570973

申请日：2022-01-07

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/62 ,  H01L23/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/447 ,  H01L23/495 ,  H01L33/48

CPC classification number: H01L25/0753 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/447 ,  H01L23/49513 ,  H01L24/04 ,  H01L24/06 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L33/0066 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L24/32 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83001 ,  H01L2224/83005 ,  H01L2224/8314 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

公开(公告)号：US11411139B2

公开(公告)日：2022-08-09

申请号：US16922940

申请日：2020-07-07

Applicant: Micron Technology, Inc.

Inventor： Lifang Xu ,  Scott D. Schellhammer ,  Shan Ming Mou ,  Michael J. Bernhardt

IPC: H01L31/0236 ,  H01L33/38 ,  H01L31/0216 ,  H01L33/22 ,  H01L33/42 ,  H01L33/58

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

公开(公告)号：US20220130807A1

公开(公告)日：2022-04-28

申请号：US17570973

申请日：2022-01-07

Applicant: Micron Technology, Inc.

Inventor： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/62 ,  H01L23/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/447 ,  H01L23/495 ,  H01L33/48

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.