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    MEMORY CELLS AND METHODS OF FABRICATION
    11.
    发明申请
    MEMORY CELLS AND METHODS OF FABRICATION 有权
    记忆细胞和制造方法

    公开(公告)号：US20150263269A1

    公开(公告)日：2015-09-17

    申请号：US14728268

    申请日：2015-06-02

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

    CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

    Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

    MAGNETIC MEMORY CELLS AND METHODS OF FORMATION
    12.
    发明申请
    MAGNETIC MEMORY CELLS AND METHODS OF FORMATION 有权
    磁记忆细胞和形成方法

    公开(公告)号：US20150137291A1

    公开(公告)日：2015-05-21

    申请号：US14582826

    申请日：2014-12-24

    Applicant: Micron Technology, Inc.

    Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

    Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

    Spin torque transfer memory cell structures and methods
    13.
    发明授权
    Spin torque transfer memory cell structures and methods 有权
    旋转转矩记忆单元结构和方法

    公开(公告)号：US08767455B2

    公开(公告)日：2014-07-01

    申请号：US13746402

    申请日：2013-01-22

    Applicant: Micron Technology, Inc.

    Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

    IPC: G11C11/15

    CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.

    Abstract translation: 本文描述了旋转转矩传递（STT）存储单元结构和方法。 一个或多个STT存储器单元结构包括位于铁磁存储材料和与反铁磁材料接触的被钉扎铁磁材料和与铁磁存储材料接触的多铁性材料之间的隧道势垒材料，其中反铁磁材料铁磁存储材料 并且被钉扎的铁磁材料位于第一电极和第二电极之间。

    SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS
    14.
    发明申请
    SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS 有权
    旋转转矩记忆细胞结构和方法

    公开(公告)号：US20140131780A1

    公开(公告)日：2014-05-15

    申请号：US13675458

    申请日：2012-11-13

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

    IPC: H01L27/22 ,  H01L43/02

    CPC classification number: H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures comprise a STT stack including: a pinned ferromagnetic material in contact with an antiferromagnetic material; a tunneling barrier material positioned between a ferromagnetic storage material and the pinned ferromagnetic material; a multiferroic material in contact with the ferromagnetic storage material; and a first electrode and a second electrode, wherein the antiferromagnetic material, the pinned ferromagnetic material, and the ferromagnetic storage material are located between the first electrode and the second electrode. The STT memory cell structure can include a third electrode and a fourth electrode, wherein at least a first portion of the multiferroic material is located between the third and the fourth electrode.

    Abstract translation: 本文描述了旋转转矩传递（STT）存储单元结构和方法。 一个或多个STT存储器单元结构包括STT堆叠，其包括：与反铁磁材料接触的钉扎铁磁材料; 位于铁磁存储材料和被钉扎的铁磁材料之间的隧道阻挡材料; 与铁磁存储材料接触的多铁性材料; 以及第一电极和第二电极，其中所述反铁磁材料，所述钉扎铁磁材料和所述铁磁存储材料位于所述第一电极和所述第二电极之间。 STT存储单元结构可以包括第三电极和第四电极，其中多铁性材料的至少第一部分位于第三和第四电极之间。

    Spin torque transfer memory cell structures and methods
    15.
    发明授权
    Spin torque transfer memory cell structures and methods 有权
    旋转转矩记忆单元结构和方法

    公开(公告)号：US08472244B2

    公开(公告)日：2013-06-25

    申请号：US13652957

    申请日：2012-10-16

    Applicant: Micron Technology, Inc.

    Inventor： Stephen J. Kramer ,  Gurtej S. Sandhu

    IPC: G11C11/15

    CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/5607 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.

    Abstract translation: 本文描述了旋转转矩传递（STT）存储单元结构和方法。 一个或多个STT存储器单元结构包括位于铁磁存储材料和与反铁磁材料接触的被钉扎铁磁材料之间的隧道阻挡材料。 隧道阻挡材料是多铁性材料，反铁磁材料，铁磁存储材料和钉扎铁磁材料位于第一电极和第二电极之间。

    Magnetic structures, semiconductor structures, and semiconductor devices
    16.
    发明授权
    Magnetic structures, semiconductor structures, and semiconductor devices 有权

    公开(公告)号：US11158670B2

    公开(公告)日：2021-10-26

    申请号：US16796677

    申请日：2020-02-20

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

    Magnetic structures, semiconductor structures, and semiconductor devices
    18.
    发明授权
    Magnetic structures, semiconductor structures, and semiconductor devices 有权

    公开(公告)号：US10586830B2

    公开(公告)日：2020-03-10

    申请号：US16112125

    申请日：2018-08-24

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

    Memory cells and methods of fabrication
    20.
    发明授权
    Memory cells and methods of fabrication 有权
    记忆单元和制造方法

    公开(公告)号：US09356229B2

    公开(公告)日：2016-05-31

    申请号：US14728268

    申请日：2015-06-02

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L43/08 ,  H01L27/22 ,  H01L29/66 ,  H01L29/82 ,  G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L43/10

    CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/329 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.

    Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

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