公开(公告)号：US08134138B2

公开(公告)日：2012-03-13

申请号：US12362532

申请日：2009-01-30

申请人： Tian Wei ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

发明人： Tian Wei ,  Dexin Wang ,  Venugopalan Vaithyanathan ,  Yang Dong ,  Muralikrishnan Balakrishnan ,  Ivan Petrov Ivanov ,  Ming Sun ,  Dimitar Velikov Dimitrov

IPC分类号： H01L29/02

CPC分类号： B82Y10/00 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/16

摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.

摘要翻译： 公开了具有平面化银电极的可编程金属化存储单元及其形成方法。 可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与 第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。 银电极包括银层和将银层与第一金属触点分开的金属种子层。

公开(公告)号：US20120040496A1

公开(公告)日：2012-02-16

申请号：US13278240

申请日：2011-10-21

申请人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

发明人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

IPC分类号： H01L21/8239

CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146

摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

公开(公告)号：US20120015404A1

公开(公告)日：2012-01-19

申请号：US13145071

申请日：2009-12-15

申请人： Ming Sun ,  Ziniu Yu ,  Lifang Ruan ,  Shouwen Chen ,  Xiaoyan Liu ,  Donghai Peng

发明人： Ming Sun ,  Ziniu Yu ,  Lifang Ruan ,  Shouwen Chen ,  Xiaoyan Liu ,  Donghai Peng

IPC分类号： C12P19/44 ,  C12N1/20 ,  C12N15/61

CPC分类号： C12N15/52 ,  C07K14/32

摘要： The invention belongs to the technical field of genetic engineering of agricultural microorganisms. Specifically, the invention relates to producing and using gene cluster for thuringiensin synthesis from Bacillus thuringiensis. The gene cluster includes 11 genes of thuA, thuB, thuC, thuD, thuE, thuF, thuG, thu1, thu2, thu3 and thu4. These genes have the nucleotide sequence as shown in SEQ ID NO: 1. And the thuringiensin biosynthetase encoded by these genes have the amino acid sequences as shown in SEQ ID NO: 2-12. The genes according to the invention and the proteins encoded by those genes can be used as new nucleosides lead compound of pesticide library and provide new target for developing insecticides. In practical use, a series of new, efficient and low toxic insecticide can be obtained by structure modification.

摘要翻译： 本发明属于农业微生物遗传工程技术领域。 具体地说，本发明涉及生产和使用苏云金芽孢杆菌的苏氨酸素合成基因簇。 基因簇包含thuA，thuB，thuC，thuD，thuE，thuF，thuG，thu1，thu2，thu3和thu4等11个基因。 这些基因具有如SEQ ID NO：1所示的核苷酸序列。由这些基因编码的苏云金素生物合成酶具有如SEQ ID NO：2-12所示的氨基酸序列。 根据本发明的基因和由这些基因编码的蛋白质可以用作农药图谱的新核苷酸铅化合物，并提供开发杀虫剂的新靶标。 在实际应用中，通过结构修饰可以获得一系列新型，高效，低毒的杀虫剂。

公开(公告)号：US08097902B2

公开(公告)日：2012-01-17

申请号：US12170519

申请日：2008-07-10

申请人： Haiwen Xi ,  Ming Sun ,  Dexin Wang ,  Shuiyuan Huang ,  Michael Tang ,  Song S. Xue

发明人： Haiwen Xi ,  Ming Sun ,  Dexin Wang ,  Shuiyuan Huang ,  Michael Tang ,  Song S. Xue

IPC分类号： H01L29/66

CPC分类号： H01L45/085 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1633 ,  H01L45/1658 ,  H01L45/1675

摘要： A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.

摘要翻译： 一种可编程金属化存储单元，其具有有孔绝缘层，该绝缘层包括位于有源电极和惰性电极之间的穿过其中的至少一个孔。 超离子簇存在于至少一个孔内，并且可以延伸经过至少一个孔。 另外，公开了制造可编程金属化存储单元的方法。

公开(公告)号：US08058646B2

公开(公告)日：2011-11-15

申请号：US12390711

申请日：2009-02-23

申请人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

发明人： Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Venkatram Venkatasamy ,  Philip George Pitcher ,  Nurul Amin

IPC分类号： H01L29/12

CPC分类号： H01L45/085 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146

摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.

摘要翻译： 可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。 电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

公开(公告)号：US20110109999A1

公开(公告)日：2011-05-12

申请号：US12616842

申请日：2009-11-12

申请人： Mourad Benakli ,  Kirill Rivkin ,  Kaizhong Gao ,  James Wessel ,  Ming Sun ,  Ibro Tabakovic ,  Mark Thomas Kief

发明人： Mourad Benakli ,  Kirill Rivkin ,  Kaizhong Gao ,  James Wessel ,  Ming Sun ,  Ibro Tabakovic ,  Mark Thomas Kief

IPC分类号： G11B5/33

CPC分类号： G11B5/115 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3967

摘要： An apparatus and associated method for a magnetic shield structure for data transduction from a recordable media in a data storage device. Various embodiments of the present invention are generally directed to a data transducer and a magnetic shield structure comprising a write shield magnetic material constructed of exchange decoupled material.

摘要翻译： 一种用于磁屏蔽结构的装置和相关方法，用于从数据存储装置中的可记录介质进行数据转换。 本发明的各种实施例通常涉及数据传感器和磁屏蔽结构，其包括由交换分离材料构成的写入屏蔽磁性材料。

公开(公告)号：US07897438B2

公开(公告)日：2011-03-01

申请号：US12154537

申请日：2008-05-22

申请人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

发明人： Leeshawn Luo ,  Kai Liu ,  Ming Sun ,  Xiao Tian Zhang

IPC分类号： H01L21/00

CPC分类号： H01L21/568 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49524 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/37099 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor package and method for making a semiconductor package are disclosed. The semiconductor package has a top surface and a mounting surface and includes a die, a conducting connecting material, a plating material and an insulating material. The die has a processed surface facing towards the mounting surface of the semiconductor package. Exposed metal connections are at the processed surface of the die. The conducting connecting material is disposed on the exposed metal connections. The plating material is in contact with the conducting connecting material. The insulating material is formed around the conducting connecting material, and the plating material extends to the exterior of the insulating material.

摘要翻译： 公开了半导体封装和制造半导体封装的方法。 半导体封装具有顶表面和安装表面，并且包括管芯，导电连接材料，电镀材料和绝缘材料。 模具具有朝向半导体封装的安装表面的处理表面。 暴露的金属连接处于模具的加工表面。 导电连接材料设置在暴露的金属连接上。 电镀材料与导电连接材料接触。 绝缘材料围绕导电连接材料形成，电镀材料延伸到绝缘材料的外部。

公开(公告)号：US07868431B2

公开(公告)日：2011-01-11

申请号：US12391251

申请日：2009-02-23

申请人： Tao Feng ,  Xiaotian Zhang ,  François Hébert ,  Ming Sun

发明人： Tao Feng ,  Xiaotian Zhang ,  François Hébert ,  Ming Sun

IPC分类号： H01L23/495 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01F5/00

CPC分类号： H01L23/49861 ,  H01F17/0033 ,  H01F2027/2814 ,  H01L21/4832 ,  H01L21/563 ,  H01L23/495 ,  H01L23/4951 ,  H01L23/49548 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor package is disclosed with high inductance rating while exhibiting a reduced foot print. It has a bonded stack of power IC die at bottom, a power inductor at top and a circuit substrate, made of leadframe or printed circuit board, in the middle. The power inductor has a inductor core of closed magnetic loop. The circuit substrate has a first number of bottom half-coil forming conductive elements beneath the inductor core. A second number of top half-coil forming conductive elements, made of bond wires, three dimensionally formed interconnection plates or upper leadframe leads, are located atop the inductor core with both ends of each element connected to respective bottom half-coil forming conductive elements to jointly form an inductive coil enclosing the inductor core. A top encapsulant protectively encases the inductor core, the top half-coil forming conductive elements, the bottom half-coil forming conductive elements and the circuit substrate.

摘要翻译： 公开了一种功率半导体封装，其具有高电感额定值，同时显示出减少的脚印。 底部有一个电源IC芯片，顶部有一个功率电感器和一个由引线框或印刷电路板制成的电路基板。 功率电感器具有闭合磁环的电感芯。 电路衬底具有在电感器芯下方形成导电元件的第一数量的底部半线圈。 由接合线，三维形成的互连板或上引线框引线构成的第二数量的上半线圈形成导电元件位于电感器芯的顶部，每个元件的两端连接到形成导电元件的相应底部半线圈， 共同形成围绕电感器芯的感应线圈。 顶部密封剂保护性地封装电感器芯，顶部半线圈形成导电元件，底部半线圈形成导电元件和电路衬底。

公开(公告)号：US20100273294A1

公开(公告)日：2010-10-28

申请号：US12832913

申请日：2010-07-08

申请人： Kai Liu ,  Ming Sun

发明人： Kai Liu ,  Ming Sun

IPC分类号： H01L21/98

CPC分类号： H01L24/49 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/37099

摘要： A semiconductor package is disclosed for packaging two adjacent semiconductor dies atop a circuit substrate. The dies are separated from each other along their longitudinal edges with an inter-die distance. An elevation-adaptive electrical connection connects a top metalized contact of die two to the bottom surface of die one while accommodating for elevation difference between the surfaces. The elevation-adaptive electrical connection includes: a) An L-shaped circuit route that is part of the circuit substrate, extending transversely from a die one longitudinal edge and placing an intermediate contact area next to a die two transverse edge. b) An interconnection plate connecting the top metalized contact area of die two with the intermediate contact area while being formed to accommodate for elevation difference between the contact areas. Consequently, the semiconductor package reduces the inter-die distance from an otherwise direct transverse circuit routing between the longitudinal edges of the dies.

摘要翻译： 公开了一种半导体封装，用于在电路基板顶部封装两个相邻的半导体管芯。 模具沿其纵向边缘彼此分开，具有模间距离。 高度自适应电连接将模具2的顶部金属化接触件连接到模具的底表面，同时容纳表面之间的高度差。 升降自适应电连接包括：a）L形电路，其是电路基板的一部分，从模具的一个纵向边缘横向延伸，并将中间接触区域放置在模具两个横向边缘旁边。 b）互连板，其在形成时将模具2的顶部金属化接触区域与中间接触区域连接，以适应接触区域之间的高度差。 因此，半导体封装减少了在芯片的纵向边缘之间的另外直接的横向电路布线的晶片间距离。

公开(公告)号：US20100206670A1

公开(公告)日：2010-08-19

申请号：US12388970

申请日：2009-02-19

申请人： Robert Schroeder ,  Ming Sun

发明人： Robert Schroeder ,  Ming Sun

IPC分类号： B66B7/04

CPC分类号： B23Q1/40 ,  B23Q1/58 ,  F16C13/006 ,  F16C29/045 ,  F16C29/12 ,  F16C2322/39

摘要： A guide wheel assembly for a carriage of a guide system is provided. The guide wheel assembly includes guide wheel and a stud shaft. The stud shaft operably supports the guide wheel for rotation about a guide wheel axis. The stud shaft includes a tool engagement section. The tool engagement section has a generally cylindrical periphery and includes a plurality of angularly spaced apart flats formed in the cylindrical periphery. Adjacent ones of the flats are separated by an arcuate section of the cylindrical periphery. The stud shaft may also include a locating pilot region for locating the stud shaft within a bore of a device to which the guide wheel assembly is mounted.

摘要翻译： 提供了一种用于引导系统的滑架的导轮组件。 引导轮组件包括导轮和螺柱轴。 螺柱轴可操作地支撑引导轮围绕导轮轴线旋转。 螺柱轴包括工具接合部。 工具接合部分具有大致圆柱形的周边并且包括形成在圆柱形周边中的多个成角度间隔的平面。 相邻的平面由圆柱形周边的弧形部分分开。 螺柱轴还可以包括用于将螺柱轴定位在安装导向轮组件的装置的孔内的定位导向区域。