公开(公告)号：US09263335B2

公开(公告)日：2016-02-16

申请号：US14607587

申请日：2015-01-28

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Sven Walczyk ,  Roelf Anco Jacob Groenhuis ,  Rolf Brenner ,  Emiel De Bruin

IPC: H01L21/00 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56

CPC classification number: H01L21/78 ,  H01L21/56 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04105 ,  H01L2224/05016 ,  H01L2224/05088 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/20 ,  H01L2224/291 ,  H01L2224/32105 ,  H01L2224/32113 ,  H01L2224/32237 ,  H01L2224/33181 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2224/05552

Abstract: Disclosed is a discrete semiconductor device package (100) comprising a semiconductor die (110) having a first surface and a second surface opposite said first surface carrying a contact (112); a conductive body (120) on said contact; an encapsulation material (130) laterally encapsulating said conductive body; and a capping member (140, 610) such as a solder cap, a further semiconductor die or a combination thereof in conductive contact with the solder portion, said solder cap extending over the encapsulation material. A further solder cap (150) may be provided over the first surface. A method of manufacturing such a discrete semiconductor device package is also disclosed.

公开(公告)号：US20150333133A1

公开(公告)日：2015-11-19

申请号：US14693756

申请日：2015-04-22

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Reza Behtash ,  Thomas Igel-Holtzendorff ,  Linpei Zhu

IPC: H01L29/40 ,  H01L21/67 ,  H01L29/06

CPC classification number: H01L29/404 ,  H01L21/67069 ,  H01L29/063 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66143 ,  H01L29/8725

Abstract: The disclosure relates to a semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductive layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductive layer adjacent to an active trench, the active cells having an active cell width; and a termination region at a periphery of the first surface comprising: at least one termination trench, the at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than the active cell width, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body, and wherein conductive material is disposed on the first insulating layer within each of the active trenches.

Abstract translation: 本发明涉及一种半导体装置，其包括主体，其具有：第一表面和相对的第二表面; 与所述第一表面相邻的第一半导体层; 有源区域包括：在第一表面中的多个有源沟槽，多个有源沟槽从第一表面延伸到第一半导体层并具有有源沟槽宽度，以及多个活性单元，每个活性单元设置在 与活性沟槽相邻的第一半导体层，所述活性单元具有活性单元宽度; 以及在所述第一表面的周边处的端接区域，包括：至少一个端接沟槽，所述至少一个端接沟槽从所述第一表面延伸到所述第一半导体层，其中所述端接区域的宽度大于所述有源沟槽 宽度; 以及多个端接沟槽隔离器，其宽度小于有源单元宽度，其中有源沟槽和至少一个端接沟槽各自包括与本体的第一半导体层相邻的第一绝缘体层，并且其中导电材料 设置在每个有源沟槽内的第一绝缘层上。

公开(公告)号：US20150287666A1

公开(公告)日：2015-10-08

申请号：US14667979

申请日：2015-03-25

Applicant: NXP B.V.

Inventor： Roelf Anco Jacob Groenhuis ,  Tim Boettcher

IPC: H01L23/495

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L24/84 ,  H01L2224/352 ,  H01L2224/37011 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/37611 ,  H01L2224/37639 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/84801 ,  H01L2924/00014

Abstract: There is disclosed a lead for connection to a semiconductor device die, the lead comprising a clip portion. The clip portion comprises a major surface having two or more protrusions extending therefrom for connection to a bond pad of the semiconductor device die.

Abstract translation: 公开了一种用于连接到半导体器件裸片的引线，该引线包括夹持部分。 夹持部分包括具有从其延伸的两个或更多个突起的主表面，用于连接到半导体器件裸片的接合焊盘。

公开(公告)号：US20150091023A1

公开(公告)日：2015-04-02

申请号：US14499654

申请日：2014-09-29

Applicant: NXP B.V.

Inventor： Tim Boettcher ,  Jan Fischer

IPC: H01L29/872 ,  H01L29/423 ,  H01L21/28 ,  H01L29/165 ,  H01L21/283 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/8725 ,  H01L21/283 ,  H01L29/161 ,  H01L29/165 ,  H01L29/401 ,  H01L29/407 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/861 ,  H01L29/872

Abstract: A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in a substrate and separated from one another by a joining region of the substrate, the joining region comprising an electrical contact and a layer of p-doped semiconductor material.

Abstract translation: 一种包括减小的表面场效应沟槽结构的二极管，所述减小的表面场效应沟槽结构包括形成在衬底中的至少两个沟槽，并且由衬底的接合区域彼此分离，所述接合区域包括电接触和层 的p掺杂半导体材料。