Double-sided cooling type semiconductor module
    13.
    发明授权
    Double-sided cooling type semiconductor module 有权
    双面冷却型半导体模块

    公开(公告)号:US07019395B2

    公开(公告)日:2006-03-28

    申请号:US10802720

    申请日:2004-03-18

    IPC分类号: H01L23/34

    摘要: A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.

    摘要翻译: 半导体模块包括固定型和可变形型冷却器以及夹在冷却器之间的扁平半导体封装。 半导体封装的相对位置关系用固定式冷却器固定,但是可变形冷却器可变。 可变形型冷却器包括覆盖冷却剂室的金属薄板的可变形构件。 半导体模块包括使固定式冷却器朝向可变形型冷却器按压的夹持机构。 夹紧机构的紧固调节螺钉使得压框接近可变形式冷却器的较冷体。 因此,通过固定式冷却器对半导体封装进行压制,而可变形构件稍微变形。 这通过绝缘构件增强了半导体封装和可变形构件之间的接触程度。

    Semiconductor device
    14.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20050073042A1

    公开(公告)日:2005-04-07

    申请号:US10802720

    申请日:2004-03-18

    摘要: A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.

    摘要翻译: 半导体模块包括固定型和可变形型冷却器以及夹在冷却器之间的扁平半导体封装。 半导体封装的相对位置关系用固定式冷却器固定,但是可变形冷却器是可变的。 可变形型冷却器包括覆盖冷却剂室的金属薄板的可变形构件。 半导体模块包括使固定式冷却器朝向可变形型冷却器按压的夹持机构。 夹紧机构的紧固调节螺钉使得压框接近可变形式冷却器的较冷体。 因此,通过固定式冷却器对半导体封装进行压制,而可变形构件稍微变形。 这通过绝缘构件增强了半导体封装和可变形构件之间的接触程度。

    Insulated gate bipolar transistor
    15.
    发明授权
    Insulated gate bipolar transistor 有权
    绝缘栅双极晶体管

    公开(公告)号:US06384431B1

    公开(公告)日:2002-05-07

    申请号:US09680538

    申请日:2000-10-06

    IPC分类号: H01L2974

    CPC分类号: H01L29/1095 H01L29/7395

    摘要: Insulated gate bipolar transistors which can restrain causing surge voltage due to an inductance component while an L-load is turned off and can improve a negative characteristic of a sustain voltage during breakdown. An insulated gate bipolar transistor (IGBT) is provided with: a p+-type semiconductor substrate; an n+-type buffer layer having high impurity concentration; an n-type intermediate layer; and an n−-type base layer having low impurity concentration. A p-type well layer and an n+-type emitter layer having high impurity concentration are formed in the n−-type base layer. The n-type intermediate layer has an intermediate impurity concentration between an impurity concentration of the n+-type buffer layer and that of the n−-type base layer. Thickness of the intermediate layer is determined so that the depletion layer does not reach the n+-type buffer layer even when the switching operation of the L-load is turned off. As a result, it can restrain causing surge voltage and can improve a negative characteristic of a sustain voltage.

    摘要翻译: 绝缘栅双极晶体管,其可以抑制由于电感分量引起的浪涌电压,同时L负载关断,并且可以在击穿期间改善维持电压的负特性。 绝缘栅双极晶体管(IGBT)具有:p +型半导体衬底; 具有高杂质浓度的n +型缓冲层; n型中间层; 以及杂质浓度低的n型基底层。 在n型基底层中形成具有高杂质浓度的p型阱层和n +型发射极层。 n型中间层在n +型缓冲层的杂质浓度与n型基底层的杂质浓度之间具有中间杂质浓度。 确定中间层的厚度,即使当L负载的切换操作被关闭时,耗尽层也不会到达n +型缓冲层。 结果,能够抑制浪涌电压,能够提高维持电压的负特性。

    Battery charge indicating system
    18.
    发明授权
    Battery charge indicating system 失效
    电池充电指示系统

    公开(公告)号:US4418311A

    公开(公告)日:1983-11-29

    申请号:US338056

    申请日:1982-01-08

    IPC分类号: H02J7/14 H02J7/16 H02J7/24

    CPC分类号: H02J7/166 H02J7/1461

    摘要: In a battery charge indicating system, there are provided detecting means of an npn-transistor for detecting a closed condition of an ignition switch, and switching means of a pnp-transistor for supplying a base current to a driving transistor in response to an output of the detecting means, so that the driving transistor is made conductive when the ignition switch is closed and a generator is not generating its output. The emitter of the pnp-transistor is connected to a battery not through a current supply terminal for a voltage regulator, whereby even when the current supply terminal is accidentally disconnected from the regulator, the driving transistor is made conductive so that an indicating lamp is activated to indicate that the generator is not in the operation condition.

    摘要翻译: 在电池充电指示系统中,提供了用于检测点火开关的闭合状态的npn晶体管的检测装置,以及用于响应于输出的输出向驱动晶体管提供基极电流的pnp晶体管的开关装置 检测装置,使得当点火开关闭合并且发电机不产生其输出时,驱动晶体管导通。 pnp晶体管的发射极不通过用于电压调节器的电流源端子而连接到电池,由此即使当电流供应端子与调节器意外断开时,驱动晶体管导通,使得指示灯被激活 以指示发电机不处于运行状态。