摘要:
A semiconductor element, and a pair of insulation substrates sandwiching the semiconductor element therebetween forms a substrate unit. The substrate unit is press-fitted in a recess provided between first radiation block and cooling block. The press-fitting of the substrate unit is performed by a second radiation block which is screwed to push the first radiation block toward the cooling block. A high thermal-conductive radiation material is disposed at the interfaces between each of the insulation substrates and each of the blocks to keep adhesiveness therebetween.
摘要:
A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.
摘要:
A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.
摘要:
A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.
摘要:
Insulated gate bipolar transistors which can restrain causing surge voltage due to an inductance component while an L-load is turned off and can improve a negative characteristic of a sustain voltage during breakdown. An insulated gate bipolar transistor (IGBT) is provided with: a p+-type semiconductor substrate; an n+-type buffer layer having high impurity concentration; an n-type intermediate layer; and an n−-type base layer having low impurity concentration. A p-type well layer and an n+-type emitter layer having high impurity concentration are formed in the n−-type base layer. The n-type intermediate layer has an intermediate impurity concentration between an impurity concentration of the n+-type buffer layer and that of the n−-type base layer. Thickness of the intermediate layer is determined so that the depletion layer does not reach the n+-type buffer layer even when the switching operation of the L-load is turned off. As a result, it can restrain causing surge voltage and can improve a negative characteristic of a sustain voltage.
摘要:
A semiconductor device comprises at least a semiconductor module including a semiconductor chip, a heat sink thermally connected to the semiconductor chip and a seal member for covering and sealing the semiconductor chip and the heat sink in such a manner as to expose the heat radiation surface of the heat sink. The radiation surface is cooled by a refrigerant. An opening is formed in a part of the seal member as a refrigerant path through which the refrigerant flows.
摘要:
A semiconductor device comprises at least a semiconductor module including a semiconductor chip, a heat sink thermally connected to the semiconductor chip and a seal member for covering and sealing the semiconductor chip and the heat sink in such a manner as to expose the heat radiation surface of the heat sink. The radiation surface is cooled by a refrigerant. An opening is formed in a part of the seal member as a refrigerant path through which the refrigerant flows.
摘要:
In a battery charge indicating system, there are provided detecting means of an npn-transistor for detecting a closed condition of an ignition switch, and switching means of a pnp-transistor for supplying a base current to a driving transistor in response to an output of the detecting means, so that the driving transistor is made conductive when the ignition switch is closed and a generator is not generating its output. The emitter of the pnp-transistor is connected to a battery not through a current supply terminal for a voltage regulator, whereby even when the current supply terminal is accidentally disconnected from the regulator, the driving transistor is made conductive so that an indicating lamp is activated to indicate that the generator is not in the operation condition.
摘要:
A semiconductor device comprises at least a semiconductor module including a semiconductor chip, a heat sink thermally connected to the semiconductor chip and a seal member for covering and sealing the semiconductor chip and the heat sink in such a manner as to expose the heat radiation surface of the heat sink. The radiation surface is cooled by a refrigerant. An opening is formed in a part of the seal member as a refrigerant path through which the refrigerant flows.
摘要:
A semiconductor device includes a semiconductor chip generating heat, a pair of heat sinks, which face each other, to conduct heat from both surfaces of the chip, a pair of compressible insulating sheets, and a mold resin covering the chip, the heat sinks, and the sheets such that the sheets are exposed from the surface of the resin. The mold resin is prevented from covering the outer surfaces of the heat sinks, which are pressed by mold parts, and breakage of the chip is avoided during molding. The plates are insulated by the sheets, so no dedicated insulating sheets for the heat sinks are needed after the device is completed.