公开(公告)号：US07009284B2

公开(公告)日：2006-03-07

申请号：US10302146

申请日：2002-11-22

申请人： Yoshimi Nakase ,  Takanori Teshima ,  Yukinori Migitaka

发明人： Yoshimi Nakase ,  Takanori Teshima ,  Yukinori Migitaka

IPC分类号： H01L23/495

CPC分类号： H01L23/42 ,  H01L23/4338 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor element, and a pair of insulation substrates sandwiching the semiconductor element therebetween forms a substrate unit. The substrate unit is press-fitted in a recess provided between first radiation block and cooling block. The press-fitting of the substrate unit is performed by a second radiation block which is screwed to push the first radiation block toward the cooling block. A high thermal-conductive radiation material is disposed at the interfaces between each of the insulation substrates and each of the blocks to keep adhesiveness therebetween.

公开(公告)号：US06538308B1

公开(公告)日：2003-03-25

申请号：US09351458

申请日：1999-07-12

申请人： Yoshimi Nakase ,  Takanori Teshima ,  Yukinori Migitaka

发明人： Yoshimi Nakase ,  Takanori Teshima ,  Yukinori Migitaka

IPC分类号： H01L23495

CPC分类号： H01L23/42 ,  H01L23/4338 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor element, and a pair of insulation substrates sandwiching the semiconductor element therebetween forms a substrate unit. The substrate unit is press-fitted in a recess provided between first radiation block and cooling block. The press-fitting of the substrate unit is performed by a second radiation block which is screwed to push the first radiation block toward the cooling block. A high thermal-conductive radiation material is disposed at the interfaces between each of the insulation substrates and each of the blocks to keep adhesiveness therebetween.

摘要翻译： 半导体元件和夹在其间的半导体元件的一对绝缘基板形成基板单元。 衬底单元被压配合在设置在第一辐射块和冷却块之间的凹部中。 衬底单元的压配是通过第二辐射块进行的，该第二辐射块被拧紧以将第一辐射块推向冷却块。 在每个绝缘基板和每个块之间的界面处设置有高导热辐射材料以保持它们之间的粘合性。

公开(公告)号：US07145254B2

公开(公告)日：2006-12-05

申请号：US10201556

申请日：2002-07-24

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Kenji Yagi ,  Yasushi Ookura ,  Kuniaki Mamitsu ,  Kazuhito Nomura ,  Yutaka Fukuda

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Kenji Yagi ,  Yasushi Ookura ,  Kuniaki Mamitsu ,  Kazuhito Nomura ,  Yutaka Fukuda

IPC分类号： H01L23/10 ,  H01L23/28

CPC分类号： H01L24/33 ,  H01L21/565 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1 of the heat sinks and the thermal expansion coefficient α2 of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.

摘要翻译： 半导体器件包括在工作中产生热的半导体芯片，用于冷却芯片的一对散热器和嵌入芯片和散热片的模制树脂。 使用焊料与芯片接合的芯片的厚度t 1和散热器之一的厚度t 2满足t 2 / t 1> = 5的等式。 此外，散热器的热膨胀系数α1和模制树脂的热膨胀系数α2满足0.5≤α2/α1<= 1.5的等式。 此外，面向焊料的芯片的表面具有满足Ra <= 500nm的等式的粗糙度Ra。 此外，焊料是Sn基焊料，以抑制由焊料蠕变引起的芯片中的压缩应力松弛。

公开(公告)号：US07009292B2

公开(公告)日：2006-03-07

申请号：US10959963

申请日：2004-10-08

申请人： Shoji Miura ,  Akihiro Niimi ,  Yoshimi Nakase ,  Takanori Teshima

发明人： Shoji Miura ,  Akihiro Niimi ,  Yoshimi Nakase ,  Takanori Teshima

IPC分类号： H01L29/78

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/564 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a blocking member electrically isolated from the control wiring layer; a first metallic layer; a protection film disposed among the main electrode, the control wiring layer and the blocking member; and a metal block for connecting to the main electrode through the first metallic layer. The chip, the main electrode, the control wiring layer, the blocking member, and the metal block are packaged. The blocking member is disposed between the main electrode and the control wiring layer.

摘要翻译： 一种封装型半导体器件，包括：具有半导体部件的半导体芯片; 用于连接到半导体部件的第一区域的主电极; 用于连接到所述半导体部件的第二区域的控制布线层; 阻挡构件，与所述控制布线层电隔离; 第一金属层; 设置在主电极，控制布线层和阻挡构件之间的保护膜; 以及用于通过第一金属层连接到主电极的金属块。 封装芯片，主电极，控制布线层，阻挡构件和金属块。 阻挡构件设置在主电极和控制布线层之间。

公开(公告)号：US06917103B2

公开(公告)日：2005-07-12

申请号：US10326555

申请日：2002-12-23

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

IPC分类号： H01L23/28 ,  H01L23/29 ,  H01L23/433 ,  H01L23/48 ,  H01L23/495 ,  H01L23/34

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor chip, a first heat sink, a second heat sink, and a mold resin. The first heat sink is electrically and thermally connected to a surface of the semiconductor chip for functioning as an electrode for the semiconductor chip and releasing the heat generated by the semiconductor chip. The second heat sink is electrically and thermally connected to another surface of the semiconductor chip for functioning as another electrode for the semiconductor chip and releasing the heat. The semiconductor chip and the first and second heat sinks are covered with the mold resin such that the heat sinks are exposed on a substantially flat surface of the mold resin.

摘要翻译： 半导体器件包括半导体芯片，第一散热器，第二散热器和模制树脂。 第一散热器电连接和热连接到半导体芯片的表面，用作半导体芯片的电极并释放由半导体芯片产生的热量。 第二散热器电连接和热连接到半导体芯片的另一个表面，用作半导体芯片的另一个电极并释放热量。 半导体芯片和第一和第二散热器被模制树脂覆盖，使得散热器暴露在模制树脂的基本平坦的表面上。

公开(公告)号：US20050077599A1

公开(公告)日：2005-04-14

申请号：US10959963

申请日：2004-10-08

申请人： Shoji Miura ,  Akihiro Niimi ,  Yoshimi Nakase ,  Takanori Teshima

发明人： Shoji Miura ,  Akihiro Niimi ,  Yoshimi Nakase ,  Takanori Teshima

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/336 ,  H01L23/00 ,  H01L23/29 ,  H01L23/433 ,  H01L23/482 ,  H01L29/739 ,  H01L29/78 ,  H01L21/48 ,  H01L29/40

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/564 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package type semiconductor device comprising: a semiconductor chip having a semiconductor part; a main electrode for connecting to a first region of the semiconductor part; a control wiring layer for connecting to a second region of the semiconductor part; a blocking member electrically isolated from the control wiring layer; a first metallic layer; a protection film disposed among the main electrode, the control wiring layer and the blocking member; and a metal block for connecting to the main electrode through the first metallic layer. The chip, the main electrode, the control wiring layer, the blocking member, and the metal block are packaged. The blocking member is disposed between the main electrode and the control wiring layer.

摘要翻译： 一种封装型半导体器件，包括：具有半导体部件的半导体芯片; 用于连接到半导体部件的第一区域的主电极; 用于连接到所述半导体部件的第二区域的控制布线层; 阻挡构件，与所述控制布线层电隔离; 第一金属层; 设置在主电极，控制布线层和阻挡构件之间的保护膜; 以及用于通过第一金属层连接到主电极的金属块。 封装芯片，主电极，控制布线层，阻挡构件和金属块。 阻挡构件设置在主电极和控制布线层之间。

公开(公告)号：US06693350B2

公开(公告)日：2004-02-17

申请号：US10321365

申请日：2002-12-18

申请人： Takanori Teshima ,  Yutaka Fukuda ,  Yoshimi Nakase ,  Kuniaki Mamitsu ,  Tomoatsu Makino

发明人： Takanori Teshima ,  Yutaka Fukuda ,  Yoshimi Nakase ,  Kuniaki Mamitsu ,  Tomoatsu Makino

IPC分类号： H01L2334

CPC分类号： H01L24/33 ,  H01L23/3135 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.

摘要翻译： 半导体器件包括第一导电构件，第二导电构件，位于导电构件之间的半导体芯片，位于第一导电构件和半导体芯片之间的接合构件，位于 在第二导电构件和半导体芯片之间，位于第一导电构件和第二导电构件之间以密封半导体芯片的模制树脂以及位于模制树脂和表面之间的接合构件防粘装置 选自由半导体芯片和导电构件组成的组中的一个构件。 接合构件防粘装置在制造过程中防止接合构件粘附到表面。 结果，由于模塑树脂和表面之间的粘附而导致的不充分的连接得到改善，并且半导体器件在电气性能方面变得耐用。

公开(公告)号：US20060055056A1

公开(公告)日：2006-03-16

申请号：US10991490

申请日：2004-11-19

申请人： Shoji Miura ,  Yoshihiko Ozeki ,  Yoshimi Nakase ,  Nobuyuki Kato ,  Tetsuji Kondou ,  Takanori Teshima ,  Naoki Hirasawa

发明人： Shoji Miura ,  Yoshihiko Ozeki ,  Yoshimi Nakase ,  Nobuyuki Kato ,  Tetsuji Kondou ,  Takanori Teshima ,  Naoki Hirasawa

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/34 ,  H01L23/4334 ,  H01L23/4824 ,  H01L23/492 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： Semiconductor equipment includes: a semiconductor device; a pair of upper and lower heat radiation plates; and a heat radiation block. The heat radiation block has a planar shape, which is smaller than a planer shape of the semiconductor device. The semiconductor device includes a heat generation portion facing the heat radiation block. The heat generation portion has a periphery edge, which is determined such that a distance between the periphery edge of the heat generation portion and a periphery edge of the heat radiation block is equal to or shorter than 1.0 mm.

摘要翻译： 半导体设备包括：半导体器件; 一对上下热辐射板; 和散热块。 散热块的平面形状小于半导体器件的平面形状。 半导体器件包括面向散热块的发热部。 发热部具有外围边缘，其被确定为使得发热部分的周边边缘与散热块的周缘之间的距离等于或小于1.0mm。

公开(公告)号：US06787898B2

公开(公告)日：2004-09-07

申请号：US10326555

申请日：2002-12-23

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

IPC分类号： H01L2334

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor chip, a first heat sink, a second heat sink, and a mold resin. The first heat sink is electrically and thermally connected to a surface of the semiconductor chip for functioning as an electrode for the semiconductor chip and releasing the heat generated by the semiconductor chip. The second heat sink is electrically and thermally connected to another surface of the semiconductor chip for functioning as another electrode for the semiconductor chip and releasing the heat. The semiconductor chip and the first and second heat sinks are covered with the mold resin such that the heat sinks are exposed on a substantially flat surface of the mold resin.

摘要翻译： 半导体器件包括半导体芯片，第一散热器，第二散热器和模制树脂。 第一散热器电连接和热连接到半导体芯片的表面，用作半导体芯片的电极并释放由半导体芯片产生的热量。 第二散热器电连接和热连接到半导体芯片的另一个表面，用作半导体芯片的另一个电极并释放热量。 半导体芯片和第一和第二散热器被模制树脂覆盖，使得散热器暴露在模制树脂的基本平坦的表面上。

公开(公告)号：US07247929B2

公开(公告)日：2007-07-24

申请号：US10808567

申请日：2004-03-25

申请人： Shoji Miura ,  Yoshimi Nakase

发明人： Shoji Miura ,  Yoshimi Nakase

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： A power element package includes a semiconductor chip, radiating members, a mold resin member, a lead terminal for control signals, and lead terminals for large electric current. On a heat accepting surface of the radiating member, an insulating layer and a conductive layer are disposed. The lead terminal for control signals is electrically connected with a gate of the semiconductor chip through the conductive layer. An emitter of the semiconductor chip is electrically connected through a solder connection member with a non-insulating portion of the heat accepting surface.

摘要翻译： 功率元件封装包括半导体芯片，散热构件，模制树脂构件，用于控制信号的引线端子和用于大电流的引线端子。 在散热构件的受热表面上设置绝缘层和导电层。 控制信号的引线端子通过导电层与半导体芯片的栅极电连接。 半导体芯片的发射极通过焊接连接部件与受热面的非绝缘部分电连接。