公开(公告)号：US07940827B2

公开(公告)日：2011-05-10

申请号：US12393701

申请日：2009-02-26

申请人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

发明人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

IPC分类号： H01S5/00

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/18308 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34386 ,  H01S5/423

摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。

公开(公告)号：US20060261352A1

公开(公告)日：2006-11-23

申请号：US11404876

申请日：2006-04-17

申请人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/10 ,  H01S5/0014 ,  H01S5/02284 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18394 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

公开(公告)号：US20090286342A1

公开(公告)日：2009-11-19

申请号：US12408362

申请日：2009-03-20

申请人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C23C16/301 ,  C23C16/54 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/025 ,  H01L33/10 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/02284 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18394 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

公开(公告)号：US07453096B2

公开(公告)日：2008-11-18

申请号：US11404876

申请日：2006-04-17

申请人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/10 ,  H01S5/0014 ,  H01S5/02284 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18394 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

公开(公告)号：US07180100B2

公开(公告)日：2007-02-20

申请号：US10788086

申请日：2004-02-27

申请人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： B82Y20/00 ,  H01S5/0224 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/2231 ,  H01S5/32366 ,  H01S5/34306 ,  H01S5/34333 ,  H01S5/34366 ,  H01S5/34386 ,  H01S5/423 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/02 ,  H01S2304/025 ,  H01S2304/04

摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

公开(公告)号：US20060134817A1

公开(公告)日：2006-06-22

申请号：US11338220

申请日：2006-01-23

申请人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

发明人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

IPC分类号： H01L21/00

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/18308 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34386 ,  H01S5/423

摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。

公开(公告)号：US06765232B2

公开(公告)日：2004-07-20

申请号：US10105800

申请日：2002-03-26

申请人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01L2904

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/025 ,  H01L33/10 ,  H01S5/0014 ,  H01S5/02284 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18394 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

公开(公告)号：US06674785B2

公开(公告)日：2004-01-06

申请号：US09957507

申请日：2001-09-20

申请人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

发明人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

IPC分类号： H01S5183

CPC分类号： H01S5/18311 ,  B82Y20/00 ,  H01S5/18308 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/32366 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34386 ,  H01S5/423

摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。

公开(公告)号：US20120040515A1

公开(公告)日：2012-02-16

申请号：US13165027

申请日：2011-06-21

申请人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

发明人： Takashi Takahashi ,  Morimasa Kaminishi ,  Shunichi Sato ,  Akihiro Itoh ,  Naoto Jikutani

IPC分类号： H01L21/20 ,  B01J8/00 ,  C23C16/34

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C23C16/301 ,  C23C16/54 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/025 ,  H01L33/10 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/02284 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18394 ,  H01S5/3211 ,  H01S5/32366 ,  H01S5/343 ,  H01S5/34306 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

公开(公告)号：US07848377B2

公开(公告)日：2010-12-07

申请号：US12393701

申请日：2009-02-26

申请人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

发明人： Shunichi Sato ,  Takashi Takahashi ,  Naoto Jikutani ,  Morimasa Kaminishi ,  Akihiro Itoh

IPC分类号： H01S5/00

摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.