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1.发明授权公开(公告)号：US07968362B2
公开(公告)日：2011-06-28
申请号：US12408362
申请日：2009-03-20
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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2.发明授权Vertical-cavity surface-emission type laser diode and fabrication process thereof 有权垂直腔表面发射型激光二极管及其制造工艺公开(公告)号：US07260137B2
公开(公告)日：2007-08-21
申请号：US11338220
申请日：2006-01-23
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。
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3.发明申请VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION PROCESS THEREOF 有权垂直孔，表面发射型激光二极管及其制造工艺公开(公告)号：US20090168828A1
公开(公告)日：2009-07-02
申请号：US12393701
申请日：2009-02-26
IPC分类号： H01S5/183
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。
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4.发明申请Vertical-cavity, surface-emission type laser diode and fabrication process thereof 有权垂直腔，表面发射型激光二极管及其制造工艺公开(公告)号：US20070263689A1
公开(公告)日：2007-11-15
申请号：US11827818
申请日：2007-07-13
IPC分类号： H01S3/10
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。
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5.发明授权公开(公告)号：US08293555B2
公开(公告)日：2012-10-23
申请号：US13165027
申请日：2011-06-21
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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6.发明授权Vertical-cavity, surface-emission type laser diode and fabrication process thereof 有权垂直腔，表面发射型激光二极管及其制造工艺公开(公告)号：US07940827B2
公开(公告)日：2011-05-10
申请号：US12393701
申请日：2009-02-26
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/18308 , H01S5/3072 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/3219 , H01S5/32366 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34386 , H01S5/423
摘要： A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
摘要翻译： 垂直腔表面发射型激光二极管包括由上反射器和下反射器夹持的有源区形成的光腔，其中下反射器由分布式布拉格反射器形成，并且非光学重组消除层设置在 有源区中的有源层和下反射器。
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公开(公告)号：US20060261352A1
公开(公告)日：2006-11-23
申请号：US11404876
申请日：2006-04-17
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/10 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
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8.发明申请SEMICONDUCTOR LIGHT-EMITTING DEVICE, SURFACE-EMISSION LASER DIODE, AND PRODUCTION APPARATUS THEREOF, PRODUCTION METHOD, OPTICAL MODULE AND OPTICAL TELECOMMUNICATION SYSTEM 有权半导体发光器件，表面发射激光二极管及其生产设备，生产方法，光学模块和光电信系统公开(公告)号：US20090286342A1
公开(公告)日：2009-11-19
申请号：US12408362
申请日：2009-03-20
CPC分类号： H01L33/007 , B82Y20/00 , C23C16/301 , C23C16/54 , C30B25/02 , C30B29/40 , H01L21/02395 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L33/025 , H01L33/10 , H01L33/32 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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公开(公告)号：US07453096B2
公开(公告)日：2008-11-18
申请号：US11404876
申请日：2006-04-17
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/10 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译： 半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度 被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。
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公开(公告)号：US07180100B2
公开(公告)日：2007-02-20
申请号：US10788086
申请日：2004-02-27
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2063 , H01S5/2231 , H01S5/32366 , H01S5/34306 , H01S5/34333 , H01S5/34366 , H01S5/34386 , H01S5/423 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/025 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
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