公开(公告)号：US09076564B2

公开(公告)日：2015-07-07

申请号：US14256124

申请日：2014-04-18

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Munehiro Ogasawara

IPC: G03F7/20 ,  H01J37/302 ,  G21K5/04 ,  G21K5/10 ,  H01J37/317 ,  H01J37/304 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F7/2065 ,  G21K5/10 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  Y10S430/143

Abstract: A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.

Abstract translation: 根据实施例的多带电粒子束写入装置包括设置单元，用于设置第二区域，使得除了缺陷光束通过的开口之外的剩余开口中的更多开口包括在第二区域中，选择单元选择 通过使用在第二区域中通过的开口的多个光束将图案写在目标物体上的第一模式的模式以及通过使用剩余多个光束中的至少一个来移动位置的同时进行多次写入的第二模式 在有缺陷的光束被控制为光束关闭的状态下，并且对于应该由缺陷光束写入的位置执行附加写入;以及写入处理控制单元，用于控制以所选择的模式写入。

公开(公告)号：US08741547B2

公开(公告)日：2014-06-03

申请号：US13706908

申请日：2012-12-06

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Munehiro Ogasawara

IPC: G03F7/20 ,  H01J37/302

CPC classification number: G21K5/04 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  G03F7/2065 ,  G21K5/10 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3177 ,  H01J2237/24507 ,  Y10S430/143

Abstract: A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.

Abstract translation: 根据实施例的多带电粒子束写入装置包括设置单元，用于设置第二区域，使得除了缺陷光束通过的开口之外的剩余开口中的更多开口包括在第二区域中，选择单元选择 通过使用在第二区域中通过的开口的多个光束将图案写在目标物体上的第一模式的模式以及通过使用剩余多个光束中的至少一个来移动位置的同时进行多次写入的第二模式 在有缺陷的光束被控制为光束关闭的状态下，并且对于应该由缺陷光束写入的位置执行附加写入;以及写入处理控制单元，用于控制以所选择的模式写入。

公开(公告)号：US09934935B2

公开(公告)日：2018-04-03

申请号：US15225969

申请日：2016-08-02

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Hideo Inoue ,  Hayato Kimura ,  Yasuo Kato ,  Jun Yashima

IPC: H01J37/20 ,  H01J37/24 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/045 ,  H01J37/243 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/20285 ,  H01J2237/20292 ,  H01J2237/30422 ,  H01J2237/30438 ,  H01J2237/31762 ,  H01J2237/31764

Abstract: A multi charged particle beam writing apparatus includes a maximum irradiation time acquisition processing circuitry to acquire, for each shot of multi-beams, a maximum irradiation time of irradiation time of each of the multi-beams, a unit region writing time calculation processing circuitry to calculate, using the maximum irradiation time for each shot, a unit region writing time by totalizing the maximum irradiation time of each shot of a plurality of times of shots of the multi-beams which irradiate a unit region concerned during stage moving, for each unit region of a plurality of unit regions obtained by dividing a writing region of a target object, a stage speed calculation processing circuitry to calculate speed of the stage for each unit region so that the stage speed becomes variable, by using the unit region writing time and a stage control processing circuitry to variably control the stage speed.

公开(公告)号：US09570267B2

公开(公告)日：2017-02-14

申请号：US14885726

申请日：2015-10-16

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto ,  Tomohiro Iijima ,  Munehiro Ogasawara ,  Hideo Inoue ,  Ryoichi Yoshikawa

IPC: A61N5/00 ,  H01J37/04 ,  H01J37/317

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract translation: 多带电粒子束写入方法包括：对于多束带电粒子束中的每个束，针对相关束的单个消隐系统，对于多个照射束的每次照射，执行光束的ON / OFF切换 次，通过使用多个单独的消隐系统，分别执行多光束中相应光束的光束ON / OFF控制，以及执行消隐控制，除了通过对每个光束的光束进行ON / OFF切换 单个消隐系统相对于每次照射多次照射，使得在对应于照射的照射时间期间光束处于ON状态，通过使用共同执行光束ON的公共消隐系统 / OFF控制整个多光束。

公开(公告)号：US09530610B2

公开(公告)日：2016-12-27

申请号：US14953959

申请日：2015-11-30

Applicant: NuFlare Technology, Inc. ,  NTT Advanced Technology Corporation

Inventor： Kazuhiro Chiba ,  Hiroshi Matsumoto ,  Munehiro Ogasawara ,  Ryoichi Yoshikawa ,  Hirofumi Morita ,  Hirokazu Yamada ,  Teruaki Safu ,  Toshifumi Konishi ,  Takaaki Matsushima ,  Kazuhisa Kudo ,  Masaki Yano ,  Katsuyuki Machida

IPC: H01J37/04 ,  H01J37/09 ,  G03F1/20

CPC classification number: H01J37/045 ,  H01J2237/043 ,  H01J2237/0432 ,  H01J2237/0437 ,  H01J2237/303 ,  H01J2237/3175 ,  H01J2237/31774

Abstract: A method for fabricating a blanking aperture array device for multi-beams includes forming, using a substrate over which a first insulating film, a first metal film, a second insulating film, and a second metal film are laminated in order, electrodes and pads on the second metal film, removing a part of the second metal film, removing the second insulating film using, as a mask, the electrodes, the pads, and a remaining part of the second metal film, and forming openings each being between a pair of electrodes, wherein, a part of the second metal film is etched such that some part of it remains in regions each connecting one of the electrodes and one of the pads, and a region in which entire openings are formed except the openings themselves is configured by the electrodes, pads, and first and second metal films such that the insulating film is not exposed.

Abstract translation: 一种用于制造用于多光束的消隐孔阵列器件的方法包括使用基板依次形成第一绝缘膜，第一金属膜，第二绝缘膜和第二金属膜，基板上依次层叠电极和焊盘 第二金属膜，去除第二金属膜的一部分，使用作为掩模的电极，焊盘和第二金属膜的剩余部分去除第二绝缘膜，并且形成开口，每个开口分别位于一对 电极，其中，第二金属膜的一部分被蚀刻，使得其中的一部分保留在每个连接电极中的一个和一个焊盘的区域中，并且除了开口本身之外还形成有开口本身的整个开口的区域 电极，焊盘以及第一和第二金属膜，使得绝缘膜不被暴露。

公开(公告)号：US09343268B2

公开(公告)日：2016-05-17

申请号：US14528652

申请日：2014-10-30

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Munehiro Ogasawara

IPC: H01L21/263 ,  H01J37/317 ,  H01J37/302 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/308

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01L21/263 ,  H01L21/2633 ,  H01L21/3085

Abstract: In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval.

Abstract translation: 根据本发明的一个方面，一种多带电粒子束写入装置，包括：孔部件，其中形成有多个开口，构成为通过使带电粒子束的部分通过多个开口而形成多光束; ; 多个阻挡器，被配置为对与所述多光束对应的光束执行消隐偏转; 写入处理控制单元，被配置为以预定的控制网格间隔以多个已经穿过所述多个开口中的不同开口的光束来对所述目标物体照射的所述写入处理进行控制; 以及剂量控制单元，被配置为当所述多个照射的光束之间的间隔偏离所述控制网格间隔时，根据偏差量可变地控制与偏差相关联的光束的剂量。

公开(公告)号：US09287090B2

公开(公告)日：2016-03-15

申请号：US14556503

申请日：2014-12-01

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Hiroshi Matsumoto

IPC: H01J37/317 ,  H01J37/302 ,  H01J37/24 ,  H01J37/147 ,  H01J37/04

CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/1471 ,  H01J37/243 ,  H01J37/3023 ,  H01J2237/0437

Abstract: A multi charged particle beam writing apparatus includes a divided shot data generation unit to generate, for each shot of multi beams of charged particle beams, data for plural times of divided shots such that irradiation for one shot of each beam is divided into plural times of divided shots each having a different irradiation time, an individual blanking system to provide blanking control individually for each of multi beams, based on the data for plural times of divided shots, an elastic rate correction value acquisition unit to acquire, for each of plural times of divided shots, an elastic rate correction value for correcting an elastic rate of an image of the whole multi beams, depending upon the number of ON-beams of the multi beams, and a lens to correct, for each divided shot, the elastic rate of the image of the whole multi beams by using the correction value.

Abstract translation: 多带电粒子束写入装置包括：分割镜头数据生成单元，对于多束带电粒子束的每个镜头，生成多次分割镜头的数据，使得每个光束的一次照射被分割成多次 各个具有不同照射时间的分割镜头，单独的消隐系统，用于基于多次分割镜头的数据为每个多光束分别提供消隐控制;弹性率校正值获取单元，用于多次获取 分割镜头的弹性速率校正值，用于根据多光束的ON光束的数量来校正整个多光束的图像的弹性率，以及用于针对每个分割镜头校正弹性率的透镜 的整个多光束的图像。

公开(公告)号：US09202673B2

公开(公告)日：2015-12-01

申请号：US14066940

申请日：2013-10-30

Applicant: NuFlare Technology, Inc.

Inventor： Hiroshi Matsumoto ,  Tomohiro Iijima ,  Munehiro Ogasawara ,  Hideo Inoue ,  Ryoichi Yoshikawa

IPC: H01J37/30 ,  H01J37/317 ,  H01J37/04

CPC classification number: H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/0435 ,  H01J2237/31771 ,  H01J2237/31774

Abstract: A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Abstract translation: 多带电粒子束写入方法包括：对于多束带电粒子束中的每个束，针对相关束的单个消隐系统，对于多个照射束的每次照射，执行光束的ON / OFF切换 次，通过使用多个单独的消隐系统，分别执行多光束中相应光束的光束ON / OFF控制，以及执行消隐控制，除了通过对每个光束的光束进行ON / OFF切换 单个消隐系统相对于每次照射多次照射，使得在对应于照射的照射时间期间光束处于ON状态，通过使用共同执行光束ON的公共消隐系统 / OFF控制整个多光束。

公开(公告)号：US08907306B2

公开(公告)日：2014-12-09

申请号：US14199535

申请日：2014-03-06

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Munehiro Ogasawara

IPC: H01J37/302 ,  H01L21/263 ,  H01J37/317

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01L21/263 ,  H01L21/2633 ,  H01L21/3085

Abstract: In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval.

公开(公告)号：US08729507B2

公开(公告)日：2014-05-20

申请号：US13896767

申请日：2013-05-17

Applicant: NuFlare Technology, Inc.

Inventor： Ryoichi Yoshikawa ,  Muehiro Ogasawara

IPC: H01J37/28 ,  H01L21/30 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/28 ,  H01J37/3177 ,  H01J2237/216 ,  H01L21/30

Abstract: A multi charged particle beam writing method includes calculating first shot positions of multiple beams, each of which includes a distortion amount of an irradiating corresponding beam, in a case of irradiating each beam, based on control grid intervals, calculating first condition positions based on a pre-set condition, each of which is arranged in a corresponding first region surrounded by closest second shot positions of 2×2 in length and width of the first shot positions, calculating, for each of second regions respectively surrounded by closest second condition positions of the first condition positions, an area density of a figure pattern in overlapping with a second region concerned, calculating an irradiation amount or an irradiation time of each beam whose corresponding first shot position is in a corresponding second region, based on an area density, and writing a pattern by irradiating a beam of the calculated irradiation amount or time.

Abstract translation: 多带电粒子束写入方法包括：计算多个光束的第一射出位置，每个光束在每个光束的照射的情况下包括照射对应光束的失真量，基于控制网格间隔，基于 预置条件，其中每个被布置在由最接近的第二射击位置围绕的对应的第一区域中，所述最近的第二射击位置的长度和宽度为第一射击位置的长度和宽度，对于分别被最接近的第二条件位置 第一条件位置，与相关的第二区域重叠的图形图案的面积密度，基于面积密度计算相应的第一拍摄位置在相应的第二区域中的每个光束的照射量或照射时间，以及 通过照射所计算的照射量或时间的光束来写入图案。