公开(公告)号：US20160133457A1

公开(公告)日：2016-05-12

申请号：US14930975

申请日：2015-11-03

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： H01L21/02 ,  C30B25/14 ,  C30B29/40 ,  C30B25/10

CPC分类号： H01L21/0262 ,  C30B25/10 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02579

摘要： A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

摘要翻译： 根据一个实施方案的气相生长装置包括反应室，存储有机金属的储存容器，储存温度高于室温的液体的恒温槽并保持浸没在液体中的储存容器，载气供给路径 连接到存储容器并将载气供应到存储容器，连接到存储容器和反应室的含有机金属的气体输送路径，传送含有机金属的含有机金属的气体输送路径 包括通过用载气鼓泡或升华而产生的有机金属的含有机金属的气体和在液体下方的位置连接到含有机金属的气体输送路径的稀释气体输送路径， 在恒温槽中的液体水平并输送用于稀释含有机金属的ga的稀释气体 s。

公开(公告)号：US20160032488A1

公开(公告)日：2016-02-04

申请号：US14810575

申请日：2015-07-28

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Shinichi MITANI ,  Yuusuke SATO

IPC分类号： C30B25/16 ,  C30B29/40 ,  C30B25/14

CPC分类号： C30B29/406 ,  C23C16/45561 ,  C30B25/14

摘要： A vapor phase growth apparatus according to an embodiment includes n reaction chambers, a main gas supply passage supplying a process gas to the n reaction chambers, a main mass flow controller arranged in the main gas supply passage to control a flow rate of the process gas flowing in the main gas supply passage, (n−1) first sub gas supply passages being branches of the main gas supply passage to supply divided process gases to the (n−1) reaction chambers among the n reaction chambers, (n−1) first sub mass flow controllers arranged in the first sub gas supply passages to control flow rates of the process gases flowing in the first sub gas supply passages, and one second sub gas supply passage being a branch of the main gas supply passage to supply a remainder of the process gas to the one reaction chamber other than the (n−1) reaction chambers.

摘要翻译： 根据实施方式的气相生长装置包括n个反应室，向n个反应室供给处理气体的主气体供给路径，配置在主气体供给路径中的主质量流量控制器，以控制处理气体的流量 （n-1）个主气体供给通道的分支（n-1），向n个反应室中的（n-1）个反应室供给分配的处理气体，（n-1） ）第一副质量流量控制器，其布置在第一副气体供应通道中，以控制在第一副气体供应通道中流动的处理气体的流量，以及一个第二副气体供应通道，其是主气体供应通道的分支， 剩余的处理气体到除了（n-1）个反应室之外的一个反应室。

公开(公告)号：US20150332914A1

公开(公告)日：2015-11-19

申请号：US14709530

申请日：2015-05-12

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： H01L21/02 ,  H01L29/20

CPC分类号： H01L21/0262 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02598 ,  H01L29/2003 ,  H01L33/20 ,  H01L33/32 ,  H01L2933/0025

摘要： A semiconductor substrate according to embodiments includes a silicon substrate, a silicon nitride layer on the silicon substrate, the silicon nitride layer having a thickness of 1 nm or thicker, single-crystal aluminum nitride layer on the silicon nitride layer, and a single-crystal layer on the aluminum nitride layer, the single-crystal layer containing gallium (Ga).

摘要翻译： 根据实施例的半导体衬底包括硅衬底，硅衬底上的氮化硅层，厚度为1nm或更厚的氮化硅层，氮化硅层上的单晶氮化铝层和单晶 在氮化铝层上，含有镓（Ga）的单晶层。

公开(公告)号：US20150233017A1

公开(公告)日：2015-08-20

申请号：US14624068

申请日：2015-02-17

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： C30B25/18 ,  C30B29/40

CPC分类号： C30B25/183 ,  C30B25/16 ,  C30B29/403 ,  C30B29/406

摘要： A vapor phase growth method according to embodiments uses a vapor phase growth apparatus including a reaction chamber, a transfer chamber, and a standby chamber. After a film containing gallium (Ga) is formed on a first substrate, a deposit adhering to a support is covered with a coating film or is removed. After that, an aluminum nitride film is formed successively on a plurality of substrates having a silicon (Si) surface, and the substrates are transferred into the standby chamber. Then, the substrates are transferred sequentially from the standby chamber into the reaction chamber, such that a film containing gallium (Ga) is formed successively on the substrates.

摘要翻译： 根据实施方案的气相生长方法使用包括反应室，转移室和备用室的气相生长装置。 在第一基板上形成含有镓（Ga）的膜之后，用涂膜覆盖附着在载体上的沉积物，或者被除去。 之后，在具有硅（Si）表面的多个基板上依次形成氮化铝膜，并且将基板转移到备用室中。 然后，将基板从备用室顺序地转移到反应室中，使得在基板上依次形成含有镓（Ga）的膜。

公开(公告)号：US20140366803A1

公开(公告)日：2014-12-18

申请号：US14301703

申请日：2014-06-11

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/0254

摘要： A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

摘要翻译： 实施方案的气相生长装置包括：反应室; 淋浴板，设置在反应室的上部，以将气体供应到反应室中; 以及支撑部，其设置在反应室内部的淋浴板下方，以将基板放置在其上。 然后，淋浴板包括设置在不同水平面内的多个第一和第二横向气体通道，以及连接到第一和第二横向气体通道的第一和第二气体喷射孔。 此外，淋浴板包括穿过支撑部的旋转中心正上方的位置的中央横向气体通道和连接到中心侧向气体通道的第三气体喷射孔。 然后，从第一和第二气体喷射孔和中心气体喷射孔喷射的气体是独立可控的。

公开(公告)号：US20190330739A1

公开(公告)日：2019-10-31

申请号：US16505056

申请日：2019-07-08

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO ,  Hideshi TAKAHASHI

IPC分类号： C23C16/455 ,  C23C16/06 ,  C23C16/52

摘要： A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

公开(公告)号：US20180179662A1

公开(公告)日：2018-06-28

申请号：US15850064

申请日：2017-12-21

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： C30B25/16 ,  C30B25/10

CPC分类号： C30B25/16 ,  C30B25/10 ,  C30B29/406

摘要： According to an aspect of the invention, there is provided a method for controlling a vapor phase growth apparatus, the vapor phase growth apparatus including a first reactor and a second reactor, a first substrate being processed in the first reactor, a second substrate being processed in the second reactor, the method including suppling a gas including a first source gas including organic metal, a second source gas including a group V element and a dilution gas to the first reactor and the second reactor at a predetermined flow rate, the first source gas, the second source gas and the dilution gas being supplied from gathered gas sources, respectively, rotating the first substrate and the second substrate at a predetermined rotational speed to form films, the method including: in the first reactor, supplying the first source gas, the second source gas and the dilution gas to form the films; in the second reactor, supplying the dilution gas without supplying the first source gas; and stopping forming the films.

公开(公告)号：US20170275755A1

公开(公告)日：2017-09-28

申请号：US15619956

申请日：2017-06-12

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： C23C16/455 ,  C23C16/30 ,  C30B25/14 ,  C30B25/16 ,  C23C16/44

CPC分类号： C23C16/45504 ,  C23C16/303 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/45574 ,  C30B25/14 ,  C30B25/165

摘要： A vapor phase growth method using a vapor phase growth apparatus including a reaction chamber, a shower plate disposed in the upper portion of the reaction chamber so as to supply a gas into the reaction chamber, and a support portion provided below the shower plate inside the reaction chamber so as to place a substrate thereon, the method includes: placing the substrate on the support portion; heating the substrate; preparing a plurality of kinds of process gases for a film formation process; preparing a mixed gas by controlling mixing ratio between a first purging gas and a second purging gas, wherein the first purging gas and the second purging gas are selected from hydrogen and inert gases, a molecular weight of the first purging gas is smaller than an average molecular weight of the plurality of kinds of process gases and a molecular weight of the second purging gas is larger than the average molecular weight of the plurality of kinds of process gases, so that the average molecular weight of the mixed gas becomes closer to the average molecular weight of the plurality of kinds of process gases than molecular weight of the first purging gas or molecular weight of the second purging gas; ejecting the plurality of kinds of process gases from an inner area of the shower plate, and the mixed gas from an outer area of the shower plate; and forming a semiconductor film on the surface of the substrate.

公开(公告)号：US20170233867A1

公开(公告)日：2017-08-17

申请号：US15585944

申请日：2017-05-03

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/18

CPC分类号： C23C16/45561 ,  C23C16/18 ,  C23C16/303 ,  C23C16/45557 ,  C23C16/52 ,  C30B25/165 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262

摘要： A vapor phase growth apparatus according to as embodiment includes n reaction chambers, a main gas supply path supplying a process gas to the n reaction chambers, a main mass flow controller controlling a flow rate of the process gas, a branch portion branching the main gas supply path, n sub gas supply paths branched from the main gas supply path at the branch portion, the n sub gas supply paths supplying branched process gases to the n reaction chambers, n first stop valves in the n sub gas supply paths between the branch portion and the n reaction chambers, distances from the n first stop valves to the branch portion are less than distances from the n first stop valves to the n reaction chambers, and n sub mass flow controllers in the n sub gas supply paths between the n first stop valves and the n reaction chambers.

公开(公告)号：US20150011077A1

公开(公告)日：2015-01-08

申请号：US14319546

申请日：2014-06-30

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： H01L21/02

CPC分类号： H01L21/0262 ,  C23C16/45565 ,  C23C16/45574 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254

摘要： A vapor phase growth apparatus of an embodiment includes: a reaction chamber configured to perform a film formation process of nitride; a first gas supply path configured to supply a halogen-based gas; a second gas supply path configured to supply an ammonia gas; a shower plate disposed at the upper portion of the reaction chamber, the shower plate configured to supply the halogen-based gas and the ammonia gas into the reaction chamber, the shower plate having a first gas passage and a second gas passage in the shower plate, the first gas passage connected to the first gas supply path and the second gas passage connected to the second gas supply path, the second gas passage being separated from the first gas passage in the shower plate until the second gas passage reaches the reaction chamber; and a substrate provided inside the reaction chamber.

摘要翻译： 一个实施方案的气相生长装置包括：反应室，被配置为进行氮化物的成膜过程; 构成为供给卤素系气体的第一气体供给路径; 构成为供给氨气的第二气体供给路径; 淋浴板，其设置在所述反应室的上部，所述淋浴板将所述卤素系气体和所述氨气供给到所述反应室，所述淋浴板具有在所述淋浴板中的第一气体通路和第二气体通路 连接到第一气体供给路径的第一气体通路和与第二气体供给路径连接的第二气体通路，第二气体通路与喷淋板中的第一气体通路分离直到第二气体通路到达反应室; 以及设置在反应室内的基板。