公开(公告)号：US20170009375A1

公开(公告)日：2017-01-12

申请号：US15201862

申请日：2016-07-05

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： C30B23/00 ,  C23C16/02

CPC分类号： C23C16/0209 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/16

摘要： A vapor deposition method supplies a material gas onto a substrate while heating the substrate by a heater to sequentially form a plurality of films with vapor deposition, grows the film under a constant output control, which keeps an output of the heater at a predetermined output in each of the plurality of films, until a total film thickness of the films formed on the substrate reaches a threshold value, and grows the film under a temperature feedback control, which controls the output of the heater such that a temperature of the substrate measured by a radiation thermometer becomes a predetermined temperature, after the total film thickness reaches the threshold value.

摘要翻译： 气相沉积法将材料气体提供到基板上，同时通过加热器加热基板以顺序地形成多个具有气相沉积的薄膜，在恒定的输出控制下使薄膜生长，这将使加热器的输出保持在预定的输出 多个膜中的每一个，直到形成在基板上的膜的总膜厚度达到阈值，并且在温度反馈控制下生长膜，其控制加热器的输出，使得基板的温度由 在总膜厚度达到阈值之后，辐射温度计成为预定温度。

公开(公告)号：US20160340800A1

公开(公告)日：2016-11-24

申请号：US15156888

申请日：2016-05-17

申请人： NuFlare Technology, Inc.

发明人： Hideki ITO ,  Yuusuke SATO

IPC分类号： C30B25/16 ,  C30B25/10

CPC分类号： C30B25/16 ,  C30B23/06 ,  C30B25/10 ,  C30B29/403

摘要： A vapor phase growth apparatus includes: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature, and the second temperature.

摘要翻译： 气相生长装置包括：支撑第一基板的第一支撑件; 加热第一基板的第一加热器; 第一气体供给器，其将第一处理气体供应到所述第一基板的表面上; 测量第一基板表面上的第一温度的第一辐射温度计，第一温度不考虑第一基板的发射率的影响; 获取第一基板的实际温度的第一温度计; 通过使用第一加热器将实际温度控制在预定温度的第一温度控制器; 支撑第二基板的第二支撑件; 加热第二基板的第二加热器; 测量第二基板的表面上的第二温度的第二辐射温度计，第二温度不考虑第二基板的发射率的影响; 以及基于第一温度，实际温度和第二温度控制第二加热器的第二温度控制器。

公开(公告)号：US20160115622A1

公开(公告)日：2016-04-28

申请号：US14921159

申请日：2015-10-23

申请人： NuFlare Technology, Inc.

发明人： Hideki ITO ,  Yuusuke SATO

IPC分类号： C30B25/02 ,  C30B25/12

CPC分类号： C23C14/566 ,  C23C16/54 ,  H01L21/67201 ,  H01L21/67742

摘要： A vapor phase growth apparatus according to an embodiment includes n (n is an integer equal to or greater than 1) reaction chambers each processing a substrate under a pressure less than atmospheric pressure, a cassette chamber having a cassette holding portion capable of placing a cassette holding the substrate on the cassette holding portion, internal pressure of the cassette chamber being able to be reduced to a pressure less than the atmospheric pressure, a transferring chamber provided between the reaction chamber and the cassette chamber and transferring the substrate under a pressure less than the atmospheric pressure, and a substrate standby portion capable of simultaneously holding n or more substrates processed in the reaction chamber and provided in a region having a heat-resistant temperature of 500° C. or more, internal pressure of the region being able to be reduced to a pressure less than the atmospheric pressure.

摘要翻译： 根据实施方案的气相生长装置包括在低于大气压的压力下处理基板的n（n是等于或大于1的整数）的反应室，具有盒保持部分的盒室能够放置盒 将所述基板保持在所述盒保持部分上，所述盒室的内部压力能够被减小到小于大气压的压力;传送室，设置在所述反应室和所述盒室之间，并且在小于 大气压力和基板备用部分，其能够同时保持在反应室中处理的n个或更多个基板，并且设置在耐热温度为500℃以上的区域中，该区域的内部压力能够 降低到小于大气压力的压力。

公开(公告)号：US20150279659A1

公开(公告)日：2015-10-01

申请号：US14670728

申请日：2015-03-27

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： H01L21/02 ,  H01L21/67 ,  C23C16/448 ,  C23C16/455 ,  C23C16/06 ,  C23C16/44

CPC分类号： H01L21/0262 ,  C23C16/06 ,  C23C16/301 ,  C23C16/4412 ,  C23C16/4482 ,  C23C16/455 ,  C30B25/14 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68792

摘要： A vapor phase growth apparatus according to embodiments includes: a reaction chamber; a first reservoir container storing a first organic metal; a source gas supply passage receiving a main carrier gas and supplying a source gas containing the first organic metal to the reaction chamber; a thermostatic room containing the first reservoir container and configured to have an internal temperature set higher than an external temperature thereof; a first carrier gas supply passage supplying a first carrier gas to the first reservoir container; a first organic metal-containing gas transfer passage connected outside the thermostatic room to the source gas supply passage to transfer a first organic metal-containing gas containing the first organic metal generated by bubbling or sublimation in the first reservoir container; and a dilution gas transfer passage connected inside the thermostatic room to the first organic metal-containing gas transfer passage transferring a dilution gas.

摘要翻译： 根据实施方案的气相生长装置包括：反应室; 存储第一有机金属的第一储存容器; 源气体供给通道，其接收主载气并将含有所述第一有机金属的源气体供应到所述反应室; 一个含有第一储存容器并被配置为具有高于其外部温度的内部温度的恒温室; 第一载气供给通道，将第一载气供应到所述第一储存容器; 第一含有机金属的气体输送通道，其连接到恒温室外部到源气体供应通道，以将含有通过起泡或升华产生的第一有机金属的第一含有机金属的气体转移到第一储存容器中; 以及连接在恒温室内的第一含有机金属的气体输送通道的稀释气体输送通道，其传送稀释气体。

公开(公告)号：US20190316274A1

公开(公告)日：2019-10-17

申请号：US16453223

申请日：2019-06-26

申请人： NuFlare Technology, Inc.

发明人： Yuusuke SATO ,  Hideshi TAKAHASHI ,  Hideki ITO ,  Takanori HAYANO

IPC分类号： C30B29/40 ,  C23C16/455 ,  C30B25/16 ,  C23C16/52 ,  C30B25/10 ,  C23C16/44

摘要： A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.

公开(公告)号：US20170283985A1

公开(公告)日：2017-10-05

申请号：US15624239

申请日：2017-06-15

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： C30B25/14 ,  H01L21/02 ,  C23C16/34 ,  C30B29/40 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/34 ,  C23C16/455 ,  C23C16/45565 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262

摘要： A vapor phase growth apparatus includes: a reaction chamber; a support provided in the reaction chamber, the support on which a substrate can be placed; a first gas supply passage supplying first gas including ammonia; a second gas supply passage supplying second gas including metal-organic gas; a purge gas supply passage supplying purge gas including ammonia and at least one selected from nitrogen, hydrogen, and inert gas; and a shower head including first region and second region provided around the first region, process gas ejection holes provided in the first region, connected to the first gas supply passage and second gas supply passage and through which the first gas and second gas are supplied into the reaction chamber, a purge gas ejection hole provided in the second region, connected to the purge gas supply passage and through which purge gas is supplied into the reaction chamber.

公开(公告)号：US20130152853A1

公开(公告)日：2013-06-20

申请号：US13714918

申请日：2012-12-14

申请人： NuFlare Technology, Inc. ,  Central Research Institute of Electric Power Industry ,  Denso Corporation ,  Ayumu ADACHI ,  Koichi NISHIKAWA

发明人： Kunihiko SUZUKI ,  Yuusuke SATO ,  Hideki ITO ,  Hidekazu TSUCHIDA ,  Isaho KAMATA ,  Masahiko ITO ,  Masami NAITO ,  Hiroaki FUJIBAYASHI ,  Ayumu ADACHI ,  Koichi NISHIKAWA

IPC分类号： C30B25/16 ,  C30B25/14

CPC分类号： C30B25/165 ,  C30B25/14

摘要： A film-forming apparatus 100 supplies a plurality of gases toward a substrate 101 in a chamber 103 using a shower plate 124. The shower plate 124 has a plurality of gas flow paths 121 extending within the shower plate along a first face of the substrate 101 side and connected to gas pipes 131 supplying a plurality of gases, and a plurality of gas jetting holes 129 bored such that the plurality of gas flow paths 121 and the chamber 103 communicate with each other on the first face side. In the film-forming apparatus 100, the plurality of gases supplied from the gas pipes 131 to the plurality of gas flow paths 121 of the shower plate 124 are supplied from the gas jetting holes 129 to the substrate 101 without being mixed inside of and vicinity of the shower plate 124.

摘要翻译： 成膜装置100使用淋浴板124向腔室103内的基板101供给多个气体。淋浴板124具有沿着基板101的第一面在喷淋板内延伸的多个气体流路121 并且连接到供应多个气体的气体管道131，以及多个气体喷射孔129，其多个气体流路121和腔室103在第一面侧相互连通。 在成膜装置100中，从气体管131供给到淋浴板124的多个气体流路121的多个气体从气体喷射孔129供给到基板101而不混入内部 的淋浴板124。

公开(公告)号：US20180179663A1

公开(公告)日：2018-06-28

申请号：US15850164

申请日：2017-12-21

申请人： NuFlare Technology, Inc.

发明人： Hideshi TAKAHASHI ,  Yuusuke SATO

IPC分类号： C30B25/16 ,  C30B29/40 ,  C30B25/18

CPC分类号： C30B25/16 ,  C30B25/183 ,  C30B29/406

摘要： A vapor phase growth apparatus according to an embodiment includes: a reactor; a supporter provided in the reactor, a substrate being capable of being placed on the supporter; a heater heating the substrate; a warpage measurement device measuring warpage of the substrate; a controller determining whether the measured warpage or a rate of change in the warpage is greater than a threshold value of the warpage or the rate of change in the warpage and stopping the heater on the basis of a determination result, the threshold value being stored in advance; a supplier supplying a process gas to the reactor; and an exhaust exhausting an exhaust gas from the reactor.

公开(公告)号：US20170298512A1

公开(公告)日：2017-10-19

申请号：US15486956

申请日：2017-04-13

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/458

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/45519 ,  C23C16/45572 ,  C23C16/458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262

摘要： A shower head according to an embodiment includes: a mixing chamber to which process gas is supplied; a plurality of cooling portions provided below the mixing chamber with a gap therebetween, the cooling portion having a cooling hole provided in a horizontal direction, the process gas being introduced from the mixing chamber to the gaps; a plurality of buffer regions provided below the gaps, the process gas being introduced from the gaps to the buffer regions; and a shower plate provided below the buffer regions, the shower plate having a plurality of through holes disposed at a predetermined interval, the process gas being introduced from the buffer regions to the through holes.

公开(公告)号：US20160177470A1

公开(公告)日：2016-06-23

申请号：US14968107

申请日：2015-12-14

申请人： NuFlare Technology, Inc.

发明人： Takumi YAMADA ,  Yuusuke SATO

IPC分类号： C30B25/14 ,  C30B29/40 ,  C30B25/16 ,  C23C16/44 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45521 ,  C23C16/4584 ,  C30B25/12 ,  C30B25/165 ,  C30B29/403

摘要： A vapor phase growth apparatus includes: a reaction chamber; a lower region provided below the reaction chamber; a rotating body provided in the reaction chamber; a rotating shaft connected to the rotating body and having a lower end provided in the lower region; a support portion provided in an upper portion of the rotating body and supporting a substrate; a reaction gas supply port provided on the reaction chamber and supplying a reaction gas for forming a film on the substrate into the reaction chamber; a rotating mechanism including a rotor, the rotating mechanism provided in the lower region and configured to rotate the rotating shaft; a first bearing provided in the lower region and rotatably supporting the rotating shaft; a second bearing provided below the first bearing in the lower region, the second bearing rotatably supporting the rotating shaft; a first air supply port provided above the rotating mechanism and the first bearing in the lower region, the first air supply port supplying a first gas into the lower region; a second air supply port provided below the rotating mechanism and the second bearing in the lower region, the second air supply port supplying a second gas into the lower region; a first exhaust port provided between the first air supply port and the second air supply port in the lower region, the first exhaust port exhausting the first gas and the second gas from the lower region; and a second exhaust port provided in the reaction chamber and exhausting a surplus reaction gas and a reaction by-product generated by the formation of the film from the reaction chamber.

摘要翻译： 气相生长装置包括：反应室; 设置在反应室下方的下部区域; 设置在所述反应室中的旋转体; 连接到所述旋转体并且具有设置在所述下部区域中的下端的旋转轴; 支撑部，其设置在所述旋转体的上部并支撑基板; 反应气体供给口，设置在所述反应室上，并将用于在所述基板上形成膜的反应气体供给到所述反应室中; 旋转机构，包括转子，所述旋转机构设置在所述下部区域中并且构造成使所述旋转轴旋转; 第一轴承，设置在所述下部区域中并且可旋转地支撑所述旋转轴; 第二轴承，其设置在所述下部区域中的所述第一轴承的下方，所述第二轴承可旋转地支撑所述旋转轴; 第一供气口，设置在所述旋转机构上方，所述第一轴承位于所述下部区域中，所述第一供气口向所述下部区域供应第一气体; 第二空气供给口，其设置在所述旋转机构的下方，所述第二轴承位于所述下部区域中，所述第二空气供给口向所述下部区域供给第二气体; 第一排气口，设置在下部区域中的第一空气供给口和第二供气口之间，第一排气口从下部区域排出第一气体和第二气体; 以及设置在反应室中的第二排气口，并且从反应室排出多余的反应气体和通过形成膜产生的反应副产物。