公开(公告)号：US09291755B2

公开(公告)日：2016-03-22

申请号：US14565773

申请日：2014-12-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L33/12 ,  G02B5/20 ,  H01L27/146 ,  G02B1/10

CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

公开(公告)号：US20150349004A1

公开(公告)日：2015-12-03

申请号：US14825703

申请日：2015-08-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Hsin-Chih Tai ,  Tiejun Dai ,  Duli Mao ,  Cunyu Yang ,  Howard E. Rhodes

IPC: H01L27/146 ,  H01L23/58

CPC classification number: H01L27/1469 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/585 ,  H01L24/05 ,  H01L24/08 ,  H01L24/94 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14683 ,  H01L27/14689 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12043 ,  H01L2924/1434 ,  H01L2924/37001 ,  H01L2224/80 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.

Abstract translation: 集成电路系统包括在电介质的接合界面处结合到第二器件晶片的第一器件晶片。 每个晶片包括多个模具，其中每个模具包括形成在模具的边缘区域处的装置，金属堆叠和密封环。 包括在第二器件晶片的管芯中的密封圈各自包括设置有金属的第一导电路径，所述第一导电路径形成在从第二器件晶片的背面延伸穿过第二器件晶片的第一开口中，并且通过接合界面到达密封环 在第一器件晶片中的相应管芯。

公开(公告)号：US08835211B1

公开(公告)日：2014-09-16

申请号：US13901958

申请日：2013-05-24

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L21/00 ,  H01L31/18 ,  H01L27/148

CPC classification number: H01L27/14812 ,  H01L27/14614 ,  H01L27/14689 ,  H01L27/14806 ,  H01L31/18

Abstract: A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage transistor to a readout node. A first isolation fence is disposed over the semiconductor substrate separating a transfer gate of the transfer transistor from a storage gate of the storage transistor. A second isolation fence is disposed over the semiconductor substrate separating the storage gate from an output gate of the output transistor. Thicknesses of the first and second isolation fences are substantially equal to spacing distances between the transfer gate and the storage gate, and between the storage gate and the output gate, respectively.

Abstract translation: 像素单元包括设置在半导体衬底中的光电二极管，存储晶体管，传输晶体管和输出晶体管。 转移晶体管将从光电二极管累积的图像电荷选择性地转移到存储晶体管。 输出晶体管将图像电荷从存储晶体管选择性地传输到读出节点。 第一隔离栅栏设置在半导体衬底上，用于将转移晶体管的转移栅极与存储晶体管的存储栅极分开。 第二隔离栅栏设置在半导体衬底上，以将存储栅极与输出晶体管的输出栅极分离。 第一和第二隔离栅栏的厚度分别基本上等于传输栅极和存储栅极之间以及存储栅极和输出栅极之间的间隔距离。

公开(公告)号：US20140246561A1

公开(公告)日：2014-09-04

申请号：US13784351

申请日：2013-03-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Dajiang Yang ,  Jin Li ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148

CPC classification number: H01L27/14812 ,  H01L21/266 ,  H01L27/14607 ,  H01L27/14689 ,  H04N5/35563

Abstract: A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode includes at least one implanted portion having the first doping concentration from the first doping implantation. The light exposure area of the long integration photodiode further includes at least one non-implanted portion photomasked from the first doping implantation such that a combined doping concentration of the implanted and non-implanted portions of the light exposure area of the long integration photodiode is less than the first doping concentration of the light exposure area of the short integration photodiode.

Abstract translation: 高动态范围图像传感器像素包括短集成光电二极管和设置在半导体材料中的长积分光电二极管。 长积分光电二极管的曝光面积远大于短积分光电二极管的曝光面积。 短积分光电二极管的曝光区域具有来自第一掺杂注入的第一掺杂浓度。 长积分光电二极管的曝光区域包括具有来自第一掺杂注入的第一掺杂浓度的至少一个注入部分。 长积分光电二极管的曝光区域还包括从第一掺杂注入光掩模的至少一个非注入部分，使得长积分光电二极管的曝光区域的注入和未注入部分的组合掺杂浓度较小 比第一掺杂浓度的曝光区域短的集成光电二极管。

公开(公告)号：US08809925B2

公开(公告)日：2014-08-19

申请号：US13649842

申请日：2012-10-11

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Zhenhong Fu

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14609 ,  H01L27/14616

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is disposed in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散（“FD”）区域和传送装置。 感光元件设置在基板层中，用于响应于光积累图像电荷。 FD区域设置在基板层中以从感光元件接收图像电荷。 转印装置设置在感光元件和FD区之间以选择性地将图像电荷从感光元件转移到FD区域。 转移装置包括栅极，掩埋沟道掺杂区域和表面沟道区域。 栅极设置在感光元件和FD区域之间。 掩埋沟道掺杂区域与FD区域相邻并且位于栅极下方。 表面沟道区域设置在掩埋沟道掺杂区域和感光元件之间并且设置在栅极下方。

公开(公告)号：US08670052B2

公开(公告)日：2014-03-11

申请号：US13686788

申请日：2012-11-27

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14643

Abstract: A color image sensor includes a pixel array including a CFA overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors, second color filter elements of a second color overlaying a second group of the photo-sensors, and a plurality of filter stacks overlaying a third group of the photo-sensors. The first group generates first color signals of a first color channel and the second group generates second color signals of a second color channel. Each of the filter stacks includes a first stacked filter of the first color and a second stacked filter of the second color. A sensitivity of the filter stacks equals a product of sensitivities of the first and the second stacked filters and the filter stacks generate a third color channel.

Abstract translation: 彩色图像传感器包括像素阵列，该像素阵列包括覆盖用于获取彩色图像的光电传感器阵列的CFA。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件，覆盖第二组光传感器的第二颜色的第二滤色器元件和覆盖第三组光电传感器的多个滤光片堆叠 光电传感器。 第一组产生第一颜色通道的第一颜色信号，第二组产生第二颜色通道的第二颜色信号。 每个过滤器堆叠包括第一颜色的第一堆叠过滤器和第二颜色的第二堆叠过滤器。 滤波器堆叠的灵敏度等于第一和第二堆叠滤波器的灵敏度的乘积，并且滤波器堆叠产生第三颜色通道。

公开(公告)号：US09305962B2

公开(公告)日：2016-04-05

申请号：US14528991

申请日：2014-10-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Ashish Shah ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

Abstract: Embodiments of the invention relate to a camera assembly including a rear-facing camera and a front-facing camera operatively coupled together (e.g., bonded, stacked on a common substrate). In some embodiments of the invention, a system having an array of frontside illuminated (FSI) imaging pixels is bonded to a system having an array of backside illuminated (BSI) imaging pixels, creating a camera assembly with a minimal size (e.g., a reduced thickness compared to prior art solutions). An FSI image sensor wafer may be used as a handle wafer for a BSI image sensor wafer when it is thinned, thereby decreasing the thickness of the overall camera module. According to other embodiments of the invention, two package dies, one a BSI image sensor, the other an FSI image sensor, are stacked on a common substrate such as a printed circuit board, and are operatively coupled together via redistribution layers.

公开(公告)号：US09287308B2

公开(公告)日：2016-03-15

申请号：US13858754

申请日：2013-04-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

公开(公告)号：US09224881B2

公开(公告)日：2015-12-29

申请号：US13856993

申请日：2013-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L21/02 ,  H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US09165959B2

公开(公告)日：2015-10-20

申请号：US13775747

申请日：2013-02-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14641

Abstract: An image sensor includes a first pixel unit horizontally adjacent to a second pixel unit. Each pixel unit includes plurality of photodiodes and a shared floating diffusion region. A first pixel transistor region of the first pixel unit has a plurality of pixel transistors. A second pixel transistor region of the second pixel unit is horizontally adjacent to the first pixel transistor region and also has a plurality of pixel transistors. A transistor layout of the second pixel transistor region is a minor image of a transistor layout of the first pixel transistor region.

Abstract translation: 图像传感器包括与第二像素单元水平相邻的第一像素单元。 每个像素单元包括多个光电二极管和共享的浮动扩散区域。 第一像素单元的第一像素晶体管区域具有多个像素晶体管。 第二像素单元的第二像素晶体管区域与第一像素晶体管区域水平相邻并且还具有多个像素晶体管。 第二像素晶体管区域的晶体管布局是第一像素晶体管区域的晶体管布局的次要图像。