公开(公告)号：US20150255683A1

公开(公告)日：2015-09-10

申请号：US14428896

申请日：2013-09-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ion Stoll ,  Sebastian Taeger ,  Hans-Christoph Gallmeier ,  Gudrun Lindberg ,  Stefan Hartauer

IPC: H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate-and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Abstract translation: 可以使用一种方法将半导体芯片上的无矩阵电泳沉积层固定。 半导体晶片具有载体衬底和至少一个半导体芯片。 所述至少一个半导体芯片具有用于产生电磁辐射的活动区域。 在至少一个半导体芯片的远离载体衬底的表面上形成至少一个接触区域。 为了形成电泳沉积层，将材料电泳沉积在至少一个半导体芯片背离载体衬底的表面上。 防止材料沉积在至少一个接触区域上。 将无机基质材料施加到半导体晶片的远离载体衬底的表面的至少一个部分，以将材料固定在至少一个半导体芯片上。

公开(公告)号：US08975102B2

公开(公告)日：2015-03-10

申请号：US14348585

申请日：2012-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias Gebuhr ,  Hans-Christoph Gallmeier

IPC: H01L21/00 ,  H01L33/62 ,  H01L23/00 ,  H01L33/44 ,  H01L33/50

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L24/82 ,  H01L33/44 ,  H01L33/50 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method for producing an optoelectronic device is provided, in which a luminescent diode chip (10) is mounted on a base surface (8) on the first terminal area (1) of a carrier (3). An electrically insulating layer (4) is applied to side faces (17) of the luminescent diode chip (10). An electrically conductive layer (5), which leads from a second terminal contact (12) of the luminescent diode chip (10) over the electrically insulating layer (4) to a second terminal area (2) on the carrier (3), is subsequently applied. A photoresist layer (7) is applied to the electrically conductive layer (5), which photoresist layer (7) is exposed by application of an electrical voltage to the luminescent diode chip (10) so that the luminescent diode chip (10) emits radiation (23). After development of the photoresist layer (7), a portion of the electrically conductive layer (5) arranged on the radiation exit surface (9) is removed by means of an etching process, in which the photoresist layer (7) serves as a mask.

Abstract translation: 提供了一种制造光电子器件的方法，其中发光二极管芯片（10）安装在载体（3）的第一端子区域（1）上的基底表面（8）上。 将电绝缘层（4）施加到发光二极管芯片（10）的侧面（17）。 导电层（5）从发光二极管芯片（10）的第二端子触点（12）穿过电绝缘层（4）引导到载体（3）上的第二端子区域（2），是 随后应用。 光致抗蚀剂层（7）被施加到导电层（5）上，该光致抗蚀剂层（7）通过向发光二极管芯片（10）施加电压而暴露，使得发光二极管芯片（10）发射辐射 （23）。 在光致抗蚀剂层（7）的显影之后，通过蚀刻工艺除去布置在辐射出射表面（9）上的导电层（5）的一部分，其中光致抗蚀剂层（7）用作掩模 。

公开(公告)号：US20140227811A1

公开(公告)日：2014-08-14

申请号：US14348585

申请日：2012-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias Gebuhr ,  Hans-Christoph Gallmeier

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L24/82 ,  H01L33/44 ,  H01L33/50 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method for producing an optoelectronic device is provided, in which a luminescent diode chip (10) is mounted on a base surface (8) on the first terminal area (1) of a carrier (3). An electrically insulating layer (4) is applied to side faces (17) of the luminescent diode chip (10). An electrically conductive layer (5), which leads from a second terminal contact (12) of the luminescent diode chip (10) over the electrically insulating layer (4) to a second terminal area (2) on the carrier (3), is subsequently applied. A photoresist layer (7) is applied to the electrically conductive layer (5), which photoresist layer (7) is exposed by application of an electrical voltage to the luminescent diode chip (10) so that the luminescent diode chip (10) emits radiation (23). After development of the photoresist layer (7), a portion of the electrically conductive layer (5) arranged on the radiation exit surface (9) is removed by means of an etching process, in which the photoresist layer (7) serves as a mask.

Abstract translation: 提供了一种制造光电子器件的方法，其中发光二极管芯片（10）安装在载体（3）的第一端子区域（1）上的基底表面（8）上。 将电绝缘层（4）施加到发光二极管芯片（10）的侧面（17）。 导电层（5）从发光二极管芯片（10）的第二端子触点（12）穿过电绝缘层（4）引导到载体（3）上的第二端子区域（2），是 随后应用。 光致抗蚀剂层（7）被施加到导电层（5）上，该光致抗蚀剂层（7）通过向发光二极管芯片（10）施加电压而暴露，使得发光二极管芯片（10）发射辐射 （23）。 在光致抗蚀剂层（7）的显影之后，通过蚀刻工艺除去布置在辐射出射表面（9）上的导电层（5）的一部分，其中光致抗蚀剂层（7）用作掩模 。

公开(公告)号：US09741616B2

公开(公告)日：2017-08-22

申请号：US14405393

申请日：2013-05-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schlereth ,  Michael Bestele ,  Christian Gaertner ,  Tobias Gebuhr ,  Hans-Christoph Gallmeier ,  Peter Holzer ,  Karlheinz Arndt ,  Albert Schneider

IPC: G01R31/27 ,  H01L21/78 ,  H01L33/00 ,  H01L33/62 ,  H01L21/50 ,  H01L21/66 ,  G01R31/26 ,  H01L33/48 ,  H01L23/495

CPC classification number: H01L21/78 ,  G01R31/2635 ,  H01L21/50 ,  H01L22/10 ,  H01L23/49541 ,  H01L23/49565 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: In one embodiment, the method is configured for producing optoelectronic semiconductor components (1) and includes the steps of: providing a leadframe assembly (20) with a multiplicity of leadframes (2), each having at least two leadframe parts (21, 22); forming at least a part of the leadframe assembly (20) with a housing material for housing bodies (4); dividing the leadframe assembly (20) between at least one part of the columns (C) and/or the rows (R), wherein the leadframes (2) remain arranged in a matrix-like manner; equipping the leadframes (2) with at least one optoelectronic semiconductor chip (3); testing at least one part of the leadframes (2) equipped with the semiconductor chips (3) and formed with the housing material after the step of dividing; and separating to form the semiconductor components (1) after the step of forming and after the step of testing.

公开(公告)号：US09406847B2

公开(公告)日：2016-08-02

申请号：US14420310

申请日：2013-07-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ales Markytan ,  Christian Gärtner ,  Hans-Christoph Gallmeier ,  Ion Stoll ,  Herbert Brunner ,  Thomas Schlereth

IPC: H01L33/50

CPC classification number: H01L33/501 ,  H01L33/504 ,  H01L33/505 ,  H01L33/508 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In at least one embodiment, the semiconductor component includes an optoelectronic semiconductors chip. Furthermore, the semiconductor component includes a conversion-medium lamina, which is fitted to a main radiation side of the semiconductor chip and is designed for converting a primary radiation into a secondary radiation. The conversion-medium lamina includes a matrix material and conversion-medium particles embedded therein. Furthermore, the conversion-medium lamina includes a conversion layer. The conversion-medium particles are situated in the at least one conversion layer. The conversion-medium particles, alone or together with diffusion-medium particles optionally present, make up a proportion by volume of at least 50% of the conversion layer. Furthermore, the conversion-medium lamina includes a binder layer containing the conversion-medium particles with a proportion by volume of at most 2.5%.

Abstract translation: 在至少一个实施例中，半导体部件包括光电子半导体芯片。 此外，半导体部件包括转换介质层，其被安装到半导体芯片的主辐射侧，并被设计用于将初级辐射转换成次级辐射。 转化介质层包括嵌入其中的基质材料和转化介质颗粒。 此外，转换介质层包括转化层。 转化介质颗粒位于至少一个转化层中。 任选存在的单独或与扩散介质颗粒一起的转化介质颗粒占转化层的至少50％的体积比例。 此外，转化介质层包括含有体积比至多2.5％的转化介质颗粒的粘合剂层。

公开(公告)号：US20150333235A1

公开(公告)日：2015-11-19

申请号：US14651306

申请日：2013-12-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander Baumgartner ,  Markus Richter ,  Hans-Christoph Gallmeier ,  Tony Albrecht

IPC: H01L33/50 ,  H01L33/58

CPC classification number: H01L33/507 ,  H01L33/505 ,  H01L33/508 ,  H01L33/58

Abstract: The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.

Abstract translation: 本发明涉及一种在操作时发出混合色辐射的光电子半导体元件。 光电子半导体部件包括光电半导体芯片，具有曲率的转换元件和布置在光电子半导体芯片和转换元件之间的间隔元件。 间隔物具有面向转换元件的曲面，转换元件与弯曲表面直接接触。