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    Method for producing a plurality of radiation-emitting semiconductor chips
    14.
    发明授权
    Method for producing a plurality of radiation-emitting semiconductor chips 有权
    用于制造多个辐射发射半导体芯片的方法

    公开(公告)号：US09590151B2

    公开(公告)日：2017-03-07

    申请号：US14785620

    申请日：2014-04-14

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Richter ,  Alexander Baumgartner ,  Hans-Christoph Gallmeier ,  Tony Albrecht

    IPC: H01L33/50 ,  H01L33/00 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

    CPC classification number: H01L33/507 ,  H01L33/0095 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058

    Abstract: A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3), applying the semiconductor bodies (1) to a carrier (2), applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1), applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, and removing the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).

    Abstract translation: 提供了一种用于制造多个辐射发射半导体芯片的方法，具有以下步骤：提供适于从辐射出射面（3）发射电磁辐射的多个半导体本体（1），施加半导体本体（ 1）到载体（2）上，在半导体体（1）之间的载体（2）的区域上施加第一掩模层（4），在半导体本体（1）的整个表面上施加转换层 ）和第一掩模层（4），并且去除第一掩模层（4），使得在每种情况下，在半导体主体的辐射出射面（3）上出现转换层（5） 1）。

    Method for Producing a Conversion Lamina and Conversion Lamina
    16.
    发明申请
    Method for Producing a Conversion Lamina and Conversion Lamina 有权
    生产转化层和转化层的方法

    公开(公告)号：US20160181481A1

    公开(公告)日：2016-06-23

    申请号：US15053567

    申请日：2016-02-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Richter

    IPC: H01L33/50

    CPC classification number: H01L33/502 ,  H01L21/4867 ,  H01L21/56 ,  H01L33/44 ,  H01L33/48 ,  H01L33/50 ,  H01L51/004

    Abstract: A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. A base material including a conversion substance contained therein is applied to a substrate by means of a double-layered stencil. Furthermore, a conversion lamina for a radiation-emitting semiconductor component includes a base material and a conversion substance embedded therein. The thickness of the conversion lamina is in a range of between 60 μm and 170 μm inclusive.

    Abstract translation: 规定了用于产生辐射发射半导体部件的至少一个转化层的方法。 包含其中所含的转化物质的基材通过双层模板施加到基底上。 此外，用于辐射发射半导体部件的转换层包括基材和嵌入其中的转化物质。 转化层的厚度在60μm〜170μm的范围内。

    Production of radiation-emitting components
    18.
    发明申请
    Production of radiation-emitting components 审中-公开

    公开(公告)号：US20180261732A1

    公开(公告)日：2018-09-13

    申请号：US15911407

    申请日：2018-03-05

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Richter ,  Tamas Lamfalusi

    IPC: H01L33/48 ,  H01L33/62 ,  H01L33/60 ,  H01L25/075 ,  H01L33/64

    CPC classification number: H01L33/486 ,  H01L25/0753 ,  H01L33/60 ,  H01L33/62 ,  H01L33/647 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0075

    Abstract: A method includes providing a metallic auxiliary carrier and forming metallic structure elements on the auxiliary carrier by carrying out at least one metal deposition process with the aid of at least one masking layer. Provision is furthermore made for arranging a reflective embedding material enclosing the metallic structure elements on the auxiliary carrier and removing the auxiliary carrier, such that a carrier comprising the structure elements and the embedding material and comprising two opposite main sides is provided. The main sides of the carrier are formed by the structure elements and the embedding material. The method furthermore includes arranging radiation-emitting semiconductor chips on the carrier, arranging a conversion material for radiation conversion on the carrier provided with the semiconductor chips, and carrying out a singulation process of forming separate radiation-emitting components.

    Method of producing an optoelectronic component
    19.
    发明授权
    Method of producing an optoelectronic component 有权

    公开(公告)号：US09911905B2

    公开(公告)日：2018-03-06

    申请号：US14888528

    申请日：2014-04-28

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Richter

    IPC: H01L33/50 ,  H01L33/44

    CPC classification number: H01L33/50 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/97 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2924/00014

    Abstract: A method of producing an optoelectronic component includes providing a substrate with an optoelectronic semiconductor chip arranged on a surface of the substrate; providing a mask having a lower layer and an upper layer, wherein the lower layer has a lower opening and the upper layer has an upper opening, which openings jointly form a continuous mask opening, and the lower opening has a larger area than the upper opening; arranging the mask above the surface of the substrate such that the lower layer faces the surface of the substrate and the mask opening is arranged above the optoelectronic semiconductor chip; spraying a layer onto the optoelectronic semiconductor chip through the mask opening; and removing the mask.

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