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11.发明授权公开(公告)号：US10026868B2
公开(公告)日：2018-07-17
申请号：US15508899
申请日：2015-09-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Alexander F. Pfeuffer , Dominik Scholz
IPC: H01L33/00 , H01L33/08 , H01L33/38 , H01L25/16 , H01L21/3213 , H01L21/28 , H01L21/311 , H01L31/12 , H01L21/3065 , H01L21/461
Abstract: A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: A) providing a structured semiconductor layer sequence (21, 22, 23) having —a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), —an active layer (23), and —a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein —the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), B) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that —the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and —the first contact layer (41) and the second contact layer (42) run parallel to each other.
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12.发明授权公开(公告)号：US10008487B2
公开(公告)日：2018-06-26
申请号：US15304917
申请日：2015-04-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Alexander F. Pfeuffer
CPC classification number: H01L25/167 , H01L25/50 , H01L27/1214 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/62
Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the semiconductor layer sequence has an active layer that generates electromagnetic radiation, and a plurality of contact elements that electrically contact the semiconductor layer sequence arranged on the upper face, wherein the semiconductor chip is a thin-film semiconductor chip, the lower face is a radiation decoupling surface through which the radiation generated in the semiconductor layer sequence is decoupled, the contact elements can be electrically actuated individually and independently from one another, and the semiconductor layer sequence has a thickness of at most 3 μm.
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公开(公告)号：US11430917B2
公开(公告)日：2022-08-30
申请号：US16615835
申请日：2018-05-17
Applicant: Osram Opto Semiconductors GmbH
Inventor： Isabel Otto , Anna Kasprzak-Zablocka , Christian Leirer , Berthold Hahn
IPC: H01L33/40 , H01L33/38 , H01L33/00 , H01L31/0216 , H01L31/0224 , H01L33/32
Abstract: A semiconductor component may include a semiconductor body having a first semiconductor layer and a second semiconductor layer, a first main face and a second main face, opposite from the first main face, the first main face being formed by a surface of the first semiconductor layer and the second main face being formed by a surface of the second semiconductor layer. At least one side face may join the first main face to the second main face, an electrically conducting carrier layer, which covers the second main face at least in certain regions and extends from the second main face to at least one side face of the semiconductor body. An electrically conducting continuous deformation layer may cover the second main face at least in certain regions. The electrically conducting deformation layer may have an elasticity that is identical to or higher than the electrically conducting carrier layer.
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14.发明授权公开(公告)号：US11018283B2
公开(公告)日：2021-05-25
申请号：US16335632
申请日：2017-10-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Alexander F. Pfeuffer , Britta Göötz , Norwin von Malm
Abstract: A method of producing optoelectronic semiconductor components including providing a primary light source having a carrier and a semiconductor layer sequence mounted thereon that generates primary light (B), wherein the semiconductor layer sequence is structured into a plurality of pixels that can be driven electrically independently of each other, and the carrier includes a plurality of control units that drive the pixels, providing at least one conversion unit adapted to convert the primary light (B) into at least one secondary light (G, R), wherein the conversion unit is grown continuously from at least one semiconductor material, structuring the conversion unit, wherein portions of the semiconductor material are removed in accordance with the pixels, and applying the conversion unit to the semiconductor layer sequence so that the remaining semiconductor material is uniquely assigned to a portion of the pixels.
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15.发明申请公开(公告)号：US20200013926A1
公开(公告)日：2020-01-09
申请号：US16493438
申请日：2018-05-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Isabel Otto
Abstract: A method for manufacturing a radiation-emitting semiconductor device and radiation-emitting semiconductor device are disclosed. In an embodiment a method includes providing a radiation-emitting semiconductor chip having a first main surface including a radiation exit surface of the semiconductor chip, applying a metallic seed layer to a second main surface of the semiconductor chip opposite to the first main surface, galvanically depositing a first metallic layer on the seed layer for forming a first electrical contact point and a second electrical contact point, galvanically depositing a second metallic layer on the first metallic layer for forming the first electrical contact point and the second electrical contact point, wherein a material of the first metallic layer and a material of the second metallic layer are different, and applying a casting compound between the contact points.
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Patent Agency Ranking
公开(公告)号：US10453989B2
公开(公告)日：2019-10-22
申请号：US15552259
申请日：2016-02-15
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Lutz Hoeppel , Alexander F. Pfeuffer , Dominik Scholz , Isabel Otto , Norwin Von Malm , Stefan Illek
Abstract: Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).
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公开(公告)号：US09698316B2
公开(公告)日：2017-07-04
申请号：US15100062
申请日：2015-01-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Göötz , Ion Stoll , Alexander F. Pfeuffer , Dominik Scholz , Isabel Otto
CPC classification number: H01L33/502 , C23C28/00 , C23C28/32 , C23C28/345 , C23F1/02 , C23F1/14 , C25D13/02 , C25D13/12 , C25D13/22 , H01L33/504 , H01L2933/0041
Abstract: A method for producing a laterally structured phosphor layer and an optoelectronic component comprising such a phosphor layer are disclosed. In an embodiment the method includes providing a carrier having a first electrically conductive layer at a carrier top side, applying an insulation layer to the first electrically conductive layer and a second electrically conductive layer to the insulation layer, etching the second electrically conductive layer and the insulation layer, wherein the first electrically conductive layer is maintained as a continuous layer. The method further includes applying a voltage to the first electrically conductive layer and electrophoretically coating the first electrically conductive layer with a first material, and applying a voltage to the second electrically conductive layer and electrophoretically coating the second electrically conductive layer with a second material.
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18.发明授权公开(公告)号：US09685591B2
公开(公告)日：2017-06-20
申请号：US15118886
申请日：2015-01-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto
IPC: H01L33/44 , H01L33/00 , H01L33/32 , H01L33/40 , H01L33/38 , H01L27/15 , H01L31/18 , H01L31/0304 , H01L31/0232 , H01L31/0224 , H01L31/0216 , H01L27/144
CPC classification number: H01L33/44 , H01L27/1446 , H01L27/153 , H01L27/156 , H01L31/02161 , H01L31/022408 , H01L31/02327 , H01L31/03044 , H01L31/1852 , H01L31/1856 , H01L33/0016 , H01L33/007 , H01L33/32 , H01L33/38 , H01L33/405 , H01L2933/0016 , H01L2933/0025
Abstract: A method for producing an optoelectronic semiconductor component having a plurality of image points and an optoelectronic component are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including an n-conducting semiconductor layer, an active zone, and a p-conducting semiconductor layer; applying a first layer sequence, wherein the first layer sequence is divided into a plurality of regions which are arranged laterally spaced with respect to each other on a top surface of the p-conducting semiconductor layer; c) applying a second insulating layer; partially removing the p-conducting semiconductor layer and the active zone, in such a way that the n-conducting semiconductor layer is exposed at points and the p-conducting semiconductor layer is divided into individual regions which are laterally spaced with respect to each other, wherein each of the regions comprises a part of the p-conducting semiconductor layer and a part of the active zone.
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公开(公告)号：US10903119B2
公开(公告)日：2021-01-26
申请号：US16078995
申请日：2017-06-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Patrick Rode
IPC: H01L29/06 , H01L21/78 , H01L21/28 , H01L23/538
Abstract: A semiconductor chip, a method for producing a semiconductor chip and an apparatus having a plurality of semiconductor chips are disclosed. In an embodiment a chip includes a substrate and a semiconductor layer arranged at the substrate, wherein the substrate includes, at a side facing the semiconductor layer, a top side with a width B1 in a first lateral direction and, at a side opposite to the top side, a bottom side with a width B3 in the first lateral direction, wherein the substrate has a width B2 in the first lateral direction at a half height between the top side and the bottom side, and wherein the following applies to widths B1, B2 and B3: B1−B2 B3.
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20.发明申请公开(公告)号：US20200220056A1
公开(公告)日：2020-07-09
申请号：US16498331
申请日：2018-04-03
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Isabel Otto , Christian Leirer
Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment a method include providing a semiconductor layer sequence having an active region and a plurality of emission regions, forming a plurality of first contact points, filling spacings between the first contact points with a molding compound, removing a growth substrate of the semiconductor layer sequence and arranging the semiconductor layer sequence on a connection carrier comprising a control circuit and a plurality of connection surfaces, wherein each of the first contact points is electrically conductively connected to a connection surface, wherein the emission regions are independently controllable by the control circuit, and wherein the molding compound serves as a temporary auxiliary carrier that mechanically stabilizes the semiconductor layer sequence during the removal of the growth substrate.
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