公开(公告)号：US09175392B2

公开(公告)日：2015-11-03

申请号：US13162707

申请日：2011-06-17

Applicant: Peter Satitpunwaycha ,  Kent Child

Inventor： Peter Satitpunwaycha ,  Kent Child

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52

CPC classification number: C23C16/45565 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/46 ,  C23C16/52

Abstract: A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process.

Abstract translation: 描述了用于将反应气体和吹扫气体供应到独立过程单元以在衬底的分离区域上沉积薄膜的气体分配结构。 每个处理单元具有相关联的清洗和排出歧管，以防止反应气体在隔离区域之间在晶片表面上形成沉积物。 每个处理单元具有用于将反应性气体输送到基底的相关联的淋浴头。 淋浴头可独立旋转以模拟沉积过程的旋转参数。

公开(公告)号：US20130145989A1

公开(公告)日：2013-06-13

申请号：US13323281

申请日：2011-12-12

Applicant: Peter Satitpunwaycha

Inventor： Peter Satitpunwaycha

IPC: C23C16/455 ,  B67D7/06

CPC classification number: C23C16/45572 ,  C23C16/45565

Abstract: Embodiments provided herein describe substrate processing tools and showerheads. A substrate processing tool includes a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. A showerhead is coupled to the housing and positioned within the processing chamber above the substrate support. The showerhead includes a dielectric material and has a first surface with a plurality of fluid outlets, a second surface with a plurality of fluid ports, and first and second passageways extending therethrough. The first passageway is in fluid communication with the plurality of fluid outlets and a first of the plurality of fluid ports. The second passageway is in fluid communication with a second and a third of the fluid ports.

Abstract translation: 本文提供的实施例描述了基板处理工具和喷头。 基板处理工具包括限定处理室的壳体。 衬底支撑件联接到壳体并且构造成支撑处理室内的衬底。 淋浴头联接到壳体并且位于处理室内的衬底支撑件上方。 所述喷头包括电介质材料，并且具有带有多个流体出口的第一表面，具有多个流体端口的第二表面和从其延伸穿过的第一和第二通道。 第一通道与多个流体出口和多个流体端口中的第一通道流体连通。 第二通道与第二和第三流体端口流体连通。

公开(公告)号：US07682984B2

公开(公告)日：2010-03-23

申请号：US11531467

申请日：2006-09-13

Applicant: Khiem K. Nguyen ,  Peter Satitpunwaycha ,  Alfred W. Mak

Inventor： Khiem K. Nguyen ,  Peter Satitpunwaycha ,  Alfred W. Mak

IPC: H01L21/302

CPC classification number: G03F1/80 ,  H01J37/321 ,  H01J37/32935

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

Abstract translation: 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

公开(公告)号：US20050067103A1

公开(公告)日：2005-03-31

申请号：US10672420

申请日：2003-09-26

Applicant: Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

Inventor： Khiem Nguyen ,  Peter Satitpunwaycha ,  Alfred Mak

IPC: C23F1/00 ,  G03F1/08 ,  H01J37/32

CPC classification number: G03F1/80 ,  H01J37/321 ,  H01J37/32935

Abstract: A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.

Abstract translation: 光掩模蚀刻室，其包括设置在室内的基板支撑构件。 衬底支撑构件被配置为支撑光掩模衬底。 腔室还包括设置在腔室上的天花板和配置成检测光掩模衬底的周边区域的端点检测系统。

公开(公告)号：US06238533B1

公开(公告)日：2001-05-29

申请号：US08951990

申请日：1997-10-16

Applicant: Peter Satitpunwaycha ,  Gongda Yao ,  Kenny King-Tai Ngan ,  Zheng Xu

Inventor： Peter Satitpunwaycha ,  Gongda Yao ,  Kenny King-Tai Ngan ,  Zheng Xu

IPC: C23C1434

CPC classification number: C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/32 ,  C23C14/345 ,  C23C14/35 ,  C23C14/358 ,  C23C14/568 ,  H01J37/321 ,  H01J37/34 ,  H01J2237/32 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A hole filling process for an integrated circuit in which two wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiNx, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.

Abstract translation: 用于集成电路的孔填充处理，其中集成电路中的两个布线电平通过窄孔连接，特别是在下层是硅的情况下。 首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。 阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。 此后，在高密度等离子体的条件下沉积第一铝层。 然后通过标准PVD技术沉积填充铝层。

公开(公告)号：US20130136862A1

公开(公告)日：2013-05-30

申请号：US13307811

申请日：2011-11-30

Applicant: Peter Satitpunwaycha

Inventor： Peter Satitpunwaycha

IPC: C23C14/00 ,  C23C16/00

CPC classification number: C23C16/00 ,  C23C16/52

Abstract: A plurality of independent reaction cells are disposed within a single process module to allow the deposition of films using MOCVD wherein parameters of the deposition are varied in a combinatorial manner. In some embodiments of the present invention, a plurality of independent reaction cells are disposed within a isolated process modules configured in a linear fashion to allow the deposition of films using MOCVD wherein parameters of the deposition are varied in a combinatorial manner. The independent reaction cells may also be utilized to form multilayer film stacks that are varied in a combinatorial manner.

Abstract translation: 多个独立的反应单元设置在单个工艺模块内，以允许使用MOCVD沉积膜，其中沉积参数以组合方式变化。 在本发明的一些实施例中，多个独立的反应池被设置在以线性方式配置的隔离过程模块中，以允许使用MOCVD沉积膜，其中沉积参数以组合方式变化。 独立的反应单元也可用于形成以组合方式变化的多层膜堆叠。

公开(公告)号：US07785172B2

公开(公告)日：2010-08-31

申请号：US11838653

申请日：2007-08-14

Applicant: Peter Satitpunwaycha ,  Richard Endo ,  Zachary Fresco ,  Nitin Kumar

Inventor： Peter Satitpunwaycha ,  Richard Endo ,  Zachary Fresco ,  Nitin Kumar

IPC: B24B49/00 ,  B24B1/00

CPC classification number: H01L21/67046 ,  B24B37/00 ,  C25D17/00 ,  C25D21/12 ,  H01L21/67051 ,  H01L21/68764 ,  H01L21/68785

Abstract: Combinatorial processing including rotation and movement within a region is described, including defining multiple regions of at least one substrate, processing the multiple regions of the at least one substrate in a combinatorial manner, rotating a head in one of the multiple regions to perform the processing, and repositioning the head relative to the one of the multiple regions while rotating the head during the processing.

Abstract translation: 描述包括区域内的旋转和移动的组合处理，包括限定至少一个基板的多个区域，以组合的方式处理至少一个基板的多个区域，在多个区域中的一个区域中旋转头部以执行处理 并且在处理期间旋转头部时，相对于多个区域中的一个重新定位头部。

公开(公告)号：US20060000802A1

公开(公告)日：2006-01-05

申请号：US10882084

申请日：2004-06-30

Applicant: Ajay Kumar ,  Madhavi Chandrachood ,  Scott Anderson ,  Peter Satitpunwaycha ,  Wai Yau

Inventor： Ajay Kumar ,  Madhavi Chandrachood ,  Scott Anderson ,  Peter Satitpunwaycha ,  Wai Yau

IPC: B44C1/22

CPC classification number: H01J37/32651 ,  G03F1/80 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J37/32871 ,  H01J2237/0225

Abstract: A method and apparatus for etching photomasks is provided herein. In one embodiment, a method of etching a photomask includes providing a process chamber having a substrate support pedestal adapted to receive a photomask substrate thereon. An ion-radical shield is disposed above the pedestal. A substrate is placed upon the pedestal beneath the ion-radical shield. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched predominantly with radicals that pass through the shield.

Abstract translation: 本文提供了蚀刻光掩模的方法和设备。 在一个实施例中，蚀刻光掩模的方法包括提供具有适于在其上接收光掩模基板的基板支撑基座的处理室。 离子基屏蔽设置在基座上方。 将衬底放置在离子基屏蔽下方的基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 基底主要用通过屏蔽的自由基进行蚀刻。

公开(公告)号：US20050133166A1

公开(公告)日：2005-06-23

申请号：US10782300

申请日：2004-02-18

Applicant: Peter Satitpunwaycha ,  Khiem Nguyen ,  Alfred Mak ,  Kenneth Collins ,  Turgut Sahin

Inventor： Peter Satitpunwaycha ,  Khiem Nguyen ,  Alfred Mak ,  Kenneth Collins ,  Turgut Sahin

IPC: C23C16/458 ,  H01L21/00 ,  H01L21/687 ,  C23F1/00

CPC classification number: H01L21/68735 ,  H01J37/321 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/68785

Abstract: The present invention generally provides an improved pedestal for supporting a substrate. The pedestal has greatest application during a plasma etching process, such as for a quartz photomask, or “reticle.” The pedestal defines a body, and a substrate support base along an upper surface of the body. The substrate support base has an outer edge, and an intermediate substrate support ridge for receiving and supporting the substrate. At least a portion of the substrate support base outside of the intermediate substrate support ridge is fabricated from a dielectric material. The purpose is to couple greater RF power through the reticle in order to enhance the plasma etching process.

Abstract translation: 本发明通常提供一种用于支撑基底的改进的基座。 基座在等离子体蚀刻过程中具有最大的应用，例如石英光掩模或“掩模版”。 基座限定主体，以及沿着主体的上表面的基板支撑基座。 基板支撑基座具有外边缘，以及用于接收和支撑基板的中间基板支撑脊。 中间基板支撑脊外侧的基板支撑基座的至少一部分由电介质材料制成。 目的是通过光罩耦合更大的RF功率，以增强等离子体蚀刻工艺。

公开(公告)号：US06219219B1

公开(公告)日：2001-04-17

申请号：US09163495

申请日：1998-09-30

Applicant: Gilbert Hausmann ,  Anantha Subramani ,  Peter Satitpunwaycha ,  Raymond Gristi ,  Bradley O. Stimson ,  Chia-Au Bill Lu ,  Lawrance A. Ringor ,  Michael N. Sugarman

Inventor： Gilbert Hausmann ,  Anantha Subramani ,  Peter Satitpunwaycha ,  Raymond Gristi ,  Bradley O. Stimson ,  Chia-Au Bill Lu ,  Lawrance A. Ringor ,  Michael N. Sugarman

IPC: H02N1300

CPC classification number: H01L21/6831

Abstract: A cathode assembly having a pedestal and a detachable susceptor. Various contact assemblies containing a canted spring are utilized to make electrical connection between the pedestal and detachable susceptor. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.

Abstract translation: 一种具有基座和可拆卸基座的阴极组件。 使用包含倾斜弹簧的各种接触组件来实现基座和可拆卸基座之间的电连接。 倾斜弹簧具有在一个方向上倾斜并且端对端连接以形成环形形状的线圈。 这种弹簧通过弹簧的转动产生多个并联的自负载电连接。 匝数像电线一样，以确保可靠的射频电能传输。 本发明的倾斜弹簧触点允许基座和卡盘之间的平坦接触。